Abstract: A fuel cell includes: an electrolyte layer; a base electrode formed on one side of the electrolyte layer; and a catalyst electrode formed on the other side of the electrolyte layer to be apart from the base electrode with the electrolyte layer interposed therebetween. The catalyst electrode includes: a first electrode portion that covers a part of the electrolyte layer; and a second electrode portion that covers a part of a surface of the first electrode portion to form an electrode portion interface in contact with the first electrode portion.

Abstract: Provided is a method of depositing a thin film on a pattern structure of a semiconductor substrate, the method including (a) supplying a source gas; (b) supplying a reactive gas; and (c) supplying plasma, wherein the steps (a), (b), and (c) are sequentially repeated on the semiconductor substrate within a reaction space until a desired thickness is obtained, and a frequency of the plasma is a high frequency of 60 MHz or greater.

Abstract: A fuel cell includes: an electrolyte layer; a base electrode formed on one side of the electrolyte layer; and a catalyst electrode formed on the other side of the electrolyte layer to be apart from the base electrode with the electrolyte layer interposed therebetween. The catalyst electrode includes: a first electrode portion that covers a part of the electrolyte layer; and a second electrode portion that covers a part of a surface of the first electrode portion to form an electrode portion interface in contact with the first electrode portion.

Abstract: Provided is a method of depositing a thin film on a pattern structure of a semiconductor substrate, the method including (a) supplying a source gas; (b) supplying a reactive gas; and (c) supplying plasma, wherein the steps (a), (b), and (c) are sequentially repeated on the semiconductor substrate within a reaction space until a desired thickness is obtained, and a frequency of the plasma is a high frequency of 60 MHz or greater.

Abstract: Provided is a method of depositing a thin film on a pattern structure of a semiconductor substrate, the method including (a) supplying a source gas; (b) supplying a reactive gas; and (c) supplying plasma, wherein the steps (a), (b), and (c) are sequentially repeated on the semiconductor substrate within a reaction space until a desired thickness is obtained, and a frequency of the plasma is a high frequency of 60 MHz or greater.

Abstract: Provided is a method of depositing a thin film on a pattern structure of a semiconductor substrate, the method including (a) supplying a source gas; (b) supplying a reactive gas; and (c) supplying plasma, wherein the steps (a), (b), and (c) are sequentially repeated on the semiconductor substrate within a reaction space until a desired thickness is obtained, and a frequency of the plasma is a high frequency of 60 MHz or greater.