Abstract: A manufacturing method for a photonic device includes dividing a target photonic network, which is a photonic network configured for the photonic semiconductor device, into a plurality of sub-photonic networks, forming the plurality of sub-photonic networks on a plurality of photonic chips, and connecting the plurality of sub-photonic networks on the plurality of photonic chips through a coupler to obtain the photonic semiconductor device carrying the target photonic network, wherein the coupler is configured to couple light from one photonic chip to another photonic chip. Compared with the scale of the photonic network of the existing photonic semiconductor device, which is limited due to the footprint limitation of a single chip, the scale of the photonic network of the photonic semiconductor device is increased several times.

Abstract: A manufacturing method for a photonic device includes dividing a target photonic network, which is a photonic network configured for the photonic semiconductor device, into a plurality of sub-photonic networks, forming the plurality of sub-photonic networks on a plurality of photonic chips, and connecting the plurality of sub-photonic networks on the plurality of photonic chips through a coupler to obtain the photonic semiconductor device carrying the target photonic network, wherein the coupler is configured to couple light from one photonic chip to another photonic chip. Compared with the scale of the photonic network of the existing photonic semiconductor device, which is limited due to the footprint limitation of a single chip, the scale of the photonic network of the photonic semiconductor device is increased several times.