Abstract: A training method includes: obtaining a first recommendation model, where a model parameter of the first recommendation model is obtained through training based on n first training samples; determining an impact function value of each first training sample with respect to a verification loss of m second training samples in the first recommendation model; determining, based on the impact function value of each first training sample with respect to the verification loss, a weight corresponding to each first training sample; and training the first recommendation model based on the n first training samples and the weights corresponding to the n first training samples, to obtain a target recommendation model.

Abstract: An AlGaN/GaN HEMT based on fluorinated graphene passivation and a manufacturing method thereof. Monolayer graphene (108) is transferred to an AlGaN (104) surface, is treated by using fluoride ions and then is insulated to thereby replace a conventional nitride passivation layer. Then, a high-k material (109) is grown on the graphene (108), and the high-k material (109) and the graphene (108) are jointly used as a gate dielectric for preparing an AlGaN/GaN metal-insulator-semiconductor (MIS) HEMT. Compared with the traditional passivation structure, the graphene (108) has the advantages of small physical thickness (sub-nanometer scale) and low additional threshold voltage. The structure and the method are simple, the effect is remarkable and the application prospect in technical fields of microelectronics and solid-state electronics is wide.

Abstract: An AlGaN/GaN HEMT based on fluorinated graphene passivation and a manufacturing method thereof. Monolayer graphene (108) is transferred to an AlGaN (104) surface, is treated by using fluoride ions and then is insulated to thereby replace a conventional nitride passivation layer. Then, a high-k material (109) is grown on the graphene (108), and the high-k material (109) and the graphene (108) are jointly used as a gate dielectric for preparing an AlGaN/GaN metal-insulator-semiconductor (MIS) HEMT. Compared with the traditional passivation structure, the graphene (108) has the advantages of small physical thickness (sub-nanometer scale) and low additional threshold voltage. The structure and the method are simple, the effect is remarkable and the application prospect in technical fields of microelectronics and solid-state electronics is wide.

Abstract: Systems, methods, and computer-readable storage media for constructing and using a model for tracking an object are disclosed. The model may be constructed from a plurality of images and a coordinate system defined with respect to the pedestal upon which the object is placed, where the plurality of images correspond to images of the object while the object is placed on a pedestal, and where the pedestal includes a plurality of markers. The model for tracking the object may be configured to provide information representative of a camera position during tracking of the object using a camera. Tracking the object using the model may include obtaining one or more images of the object using a camera, and determining a position of the camera relative to the object based on the model.