Patents by Inventor Jingjie NIU

Jingjie NIU has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • JUNCTION STRUCTURE ELEMENT AND METHOD OF MANUFACTURING THE SAME
    Publication number: 20230361193
    Abstract: Provided are a junction structure element and a method of manufacturing the junction structure element. The junction structure element includes a semiconductor channel layer which includes a material having ferroelectric and semiconductor properties, a source electrode and a drain electrode which are each in contact with the semiconductor channel layer and are spaced apart from each other, a ferroelectric layer which is formed on the semiconductor channel layer and includes a material having ferroelectric properties, and a gate electrode to be disposed on the ferroelectric layer. The method of manufacturing the junction structure element includes a first operation of forming a semiconductor channel layer, which includes a material having ferroelectric and semiconductor properties, on a substrate, and a second operation of forming a ferroelectric layer, which includes a material having ferroelectric properties, on the semiconductor channel layer.
    Type: Application
    Filed: May 3, 2023
    Publication date: November 9, 2023
    Applicant: RESEARCH & BUSINESS FOUNDATION SUNGKYUNKWAN UNIVERSITY
    Inventors: Sung Joo LEE, Sung Pyo BAEK, Hyun Ho YOO, Su Min JEON, Jingjie NIU