Abstract: A chip preparation method and system, and a chip are provided. The method includes: preparing, by using a laser direct writing exposure manner, a first underlying circuit of an impedance Josephson parametric amplifier and a second underlying circuit for testing, to obtain a first chip product; generating, on the first chip product by using the laser direct writing exposure manner, a photoresist structure for preparing a Josephson junction; cutting, from the first chip product, a second chip product on which the second underlying circuit is located and a third chip product on which the first underlying circuit is located; preparing a Josephson junction sample based on a photoresist structure corresponding to the second underlying circuit, to obtain an oxidation condition; and preparing, according to the oxidation condition, the Josephson junction based on a photoresist structure corresponding to the first underlying circuit.

Abstract: Ionic superatomic materials that can be solution-processed into completely amorphous and homogeneous thin films are disclosed herein. The amorphous materials disclosed herein have tunable compositions and have electrical conductivities of up to 300 siemens per meter, thermal conductivities of 0.05 watt per meter per degree Kelvin, and optical transparencies of up to 92%. Application of these thin-films are also provided herein.

Abstract: An air-blowing roller includes: a roller body, where a plurality of air outlets are disposed on an outer peripheral surface of the roller body, the plurality of air outlets are arranged along an axial direction of the roller body, an air exhaust direction of the air outlets is tangent to the outer peripheral surface of the roller body, and air exhaust directions of the plurality of air outlets are consistent. A dust removal apparatus includes a conveyance mechanism, an air-blowing roller assembly, and an air intake roller assembly.

Abstract: A shear testing system and method of thermo-seepage-mechanical field and engineering disturbance coupling under deep and complex condition are provided. The shear testing system can be used in conjunction with an axial pressure application device to simplify the structure, save costs, and facilitate a triaxial confining pressure—temperature—axial pressure—torsional shear coupled test on a rock specimen. The shear testing system can achieve the following three purposes. First, the shear testing system can convert an axial pressure into a torsional shear force through a transmission mechanism of a power conversion assembly. Second, the shear testing system can apply an axial pressure to the rock specimen fixed between two specimen fixing heads, through a pressure shaft of an axial pressure mechanism. Third, the shear testing system can apply a triaxial confining pressure and a temperature field to the rock specimen.

Abstract: An integrated acoustic detection and rock direct tensile test machine includes a support frame. A top of the support frame is provided with a top plate and a bearing plate is provided above the top plate. The bearing plate is provided with force transferring rods, lower ends of which are provided with a tensile base. A top of the tensile base is provided with a lower clamp holder and a bottom of the top plate is provided with an upper clamp holder. An upper channel is provided inside the upper clamp holder. The upper channel is provided with an acoustic transmitting probe. A lower channel is provided inside the lower clamp holder. One end of the lower channel is communicated with the outside, the other end is provided with an acoustic receiving probe. The lower channel extends to a bottom of a clamping chamber of the lower clamp holder.

Abstract: Provided are a method for transferring a compound semiconductor single crystal thin film layer and a method for preparing a single crystal GaAs—OI composite wafer, including: preparing a graphite transition layer on a first substrate; growing the compound semiconductor single crystal thin film layer on the graphite transition layer; preparing a first dielectric layer on the compound semiconductor single crystal thin film layer; preparing a second dielectric layer on a second substrate; combining the first substrate and the second substrate by bonding the first dielectric layer and the second dielectric layer; applying a lateral external pressure, such that the compound semiconductor single crystal thin film layer and the first substrate are transversely split at the graphite transition layer, and the compound semiconductor single crystal thin film layer is transferred to the second substrate.

Abstract: Provided are a method for transferring a compound semiconductor single crystal thin film layer and a method for preparing a single crystal GaAs-O I composite wafer, including: preparing a graphite transition layer on a first substrate; growing the compound semiconductor single crystal thin film layer on the graphite transition layer; preparing a first dielectric layer on the compound semiconductor single crystal thin film layer; preparing a second dielectric layer on a second substrate; combining the first substrate and the second substrate by bonding the first dielectric layer and the second dielectric layer; applying a lateral external pressure, such that the compound semiconductor single crystal thin film layer and the first substrate are transversely split at the graphite transition layer, and the compound semiconductor single crystal thin film layer is transferred to the second substrate.

Abstract: The invention relates to a drug sustained-release composition, particularly a sustained-release composition comprising metoprolol and preparation method thereof. The invention also relates to a combination product comprising a sustained-release composition comprising metoprolol and a pharmaceutical composition comprising hydrochlorothiazide. The sustained-release composition comprising metoprolol according to the invention eliminates the phenomena of delayed release of such sustained-release compositions in the prior art, has a better drug release curve, and also have the advantages such as simple formula, easy operation, stable quality, strong controllability, and good reproducibility, and therefore have good application prospects.

Abstract: The invention relates to a drug sustained-release composition, particularly a sustained-release composition comprising metoprolol and preparation method thereof. The invention also relates to a combination product comprising a sustained-release composition comprising metoprolol and a pharmaceutical composition comprising hydrochlorothiazide. The sustained-release composition comprising metoprolol according to the invention eliminates the phenomena of delayed release of such sustained-release compositions in the prior art, has a better drug release curve, and also have the advantages such as simple formula, easy operation, stable quality, strong controllability, and good reproducibility, and therefore have good application prospects.

Abstract: A method and an apparatus for binarizing an intra prediction mode are provided. The method includes: acquiring an intra prediction mode of a luma component; if the intra prediction mode of the luma component is one kind of prediction mode in M, modifying a value of a serial number of a prediction mode Luma Angle of a chroma component to I; sequencing all prediction modes of the chroma component according to a preset rule; and performing binarization on the modified Luma Angle, and sending the binarized Luma Angle to a decoding end. A method for coding an intra prediction mode and a method and an apparatus for decoding an intra prediction mode are further provided. According to the present invention, coding efficiency is improved.

Abstract: A laser anti-reflection device includes a polarizing beam splitter, a ?/4 wave plate and an absorber disposed in an outgoing light path of a laser emitting linearly polarized light with a wavelength of ?. The linearly polarized light from the laser passes through the polarizing beam splitter and the ?/4 wave plate in turn to become a circularly polarized light beam. Part of the circularly polarized light beam is then reflected by a workpiece to be processed along the original light path and passes the ?/4 wave plate to become a linearly polarized light beam with a polarization direction vertical to that of the outgoing linearly polarized light beam. The vertical polarized beam passes the polarizing beam splitter, deviates from the light path of the outgoing linearly polarized light beam and reaches the absorber. The laser anti-reflection device prevents reflected light from damaging the laser from high power lasers.

Abstract: Frame-level dependent bit allocation for hybrid video coding is presented to address issues relating to computational complexity of multi-pass coding of video data. An interframe dependency (IFDM) approach is presented which enables a quantitative measure of the coding dependency between the current frame and its reference frame. Based on the IFDM, buffer-constrained frame-level dependent bit allocation is determined (IFDM-DBA). Successive convex approximation techniques are utilized to convert an original optimization into a series of convex optimization problems.

Abstract: A method and an apparatus for binarizing an intra prediction mode are provided. The method includes: acquiring an intra prediction mode of a luma component; if the intra prediction mode of the luma component is one kind of prediction mode in M, modifying a value of a serial number of a prediction mode Luma Angle of a chroma component to I; sequencing all prediction modes of the chroma component according to a preset rule; and performing binarization on the modified Luma Angle, and sending the binarized Luma Angle to a decoding end. A method for coding an intra prediction mode and a method and an apparatus for decoding an intra prediction mode are further provided. According to the present invention, coding efficiency is improved.

Abstract: A laser anti-reflection device includes a polarizing beam splitter, a ?/4 wave plate and an absorber disposed in an outgoing light path of a laser emitting linearly polarized light with a wavelength of ?. The linearly polarized light from the laser passes through the polarizing beam splitter and the ?/4 wave plate in turn to become a circularly polarized light beam. Part of the circularly polarized light beam is then reflected by a workpiece to be processed along the original light path and passes the ?/4 wave plate to become a linearly polarized light beam with a polarization direction vertical to that of the outgoing linearly polarized light beam. The vertical polarized beam passes the polarizing beam splitter, deviates from the light path of the outgoing linearly polarized light beam and reaches the absorber. The laser anti-reflection device prevents reflected light from damaging the laser from high power lasers.