Abstract: A method for predicting the athletic performance potential of a subject comprising the step of assaying a biological sample from a subject for a genetic variant in linkage disequilibrium with MSTN-66493737 (T/C) SNP. The invention also provides an assay for determining the athletic performance potential of a subject.

Abstract: A method for predicting the athletic performance potential of a subject comprising the step of assaying a biological sample from a subject for a genetic variant in linkage disequilibrium with MSTN-66493737 (T/C) SNP. The invention also provides an assay for determining the athletic performance potential of a subject.

Abstract: A method for predicting the athletic performance potential of a subject comprising the step of assaying a biological sample from a subject for a genetic variant in linkage disequilibrium with MSTN-66493737 (T/C) SNP. The invention also provides an assay for determining the athletic performance potential of a subject.

Abstract: A method and assay for predicting athletic performance potential of a subject, such as a thoroughbred race horse, comprising the steps of assaying a biological sample from a subject for the presence of a single nucleotide polymorphism in one or more genes associated with athletic performance. The athletic performance genes may be selected from one or more of MSTN, COX4I2, PDK4, CKM and COX4I1.

Abstract: A method for predicting the athletic performance potential of a subject comprising the step of assaying a biological sample from a subject for a genetic variant in linkage disequilibrium with MSTN-66493737 (T/C) SNP. The invention also provides an assay for determining the athletic performance potential of a subject.

Abstract: The present invention belongs to the technical field of memory storage and specially relates to a NiO-based resistive random access memory system (RRAM) and a preparation method thereof. The RRAM is comprised of a substrate and a metal-insulator-metal (MIM) structure, wherein the electrodes are metal films, such as copper, aluminum, etc., capable of being applied to the interconnection process, and the resistive switching insulator is an Al2O3/NiO/Al2O3 laminated dielectric film. The MIM structure in the invention shows stable switching between the bi-stable resistance states as well as memory features; compared with the RRAM that only uses a single NiO-based dielectric film, the storage window is increased, and the resistance stability is improved. Therefore, the NiO-based RRAM has a good prospect in actual application. The present invention further provides a method for preparing the abovementioned memory storage system.

Abstract: A method for predicting the athletic performance potential of a subject comprising the step of assaying a biological sample from a subject for a genetic variant in linkage disequilibrium with MSTN-66493737 (T/C) SNP. The invention also provides an assay for determining the athletic performance potential of a subject.

Abstract: The present invention relates to an electric wire having a conductor and a covering layer covering the conductor. The electric wire is inserted under pressure between two contact portions of a terminal of an insulation displacement connector to electrically connect to the terminal. In the present invention, the covering layer is made of a covering material obtained by irradiating with ionizing radiation a resin composition containing an ethylene copolymer and a metal hydroxide surface-treated with a predetermined silane compound. The 100% tensile modulus of the covering material is 7.8 MPa or more. The 100% tensile modulus and elongation satisfy E1>270−8.5×10−6×Y (where E1 is the elongation and Y is the 100% tensile modulus).