Abstract: The present disclosure provides a method for increasing luminescence uniformity and reducing afterglow of a Ce-doped gadolinium-aluminum-gallium garnet structure scintillation crystal, a crystal material and a detector. Sc ions are doped into the crystal material, and the Sc ions occupy at least an octahedral site. The effective segregation coefficient of active Ce ions is increased by a radius compensation effect of Sc—Ce ions and adjustment of lattice parameters, thereby the luminescence uniformity of the crystal is increased and the energy resolution is optimized; and at the same time, the potential barrier for Gd ions entering the octahedral site is increased, thereby the probability of the Gd ions entering the octahedral site is reduced, the density of point defects in the crystal is decreased, and the afterglow intensity is reduced. A general formula of the Ce-doped gadolinium-aluminum-gallium garnet structure scintillation crystal is {Gd1-x-y-pScxCeyMep}3[Al1-q]5O12, 0<x?0.1, 0<y<0.02, 0?p?0.

Abstract: The present disclosure provides a method for increasing luminescence uniformity and reducing afterglow of a Ce-doped gadolinium-aluminum-gallium garnet structure scintillation crystal, a crystal material and a detector. Sc ions are doped into the crystal material, and the Sc ions occupy at least an octahedral site. The effective segregation coefficient of active Ce ions is increased by a radius compensation effect of Sc—Ce ions and adjustment of lattice parameters, thereby the luminescence uniformity of the crystal is increased and the energy resolution is optimized; and at the same time, the potential barrier for Gd ions entering the octahedral site is increased, thereby the probability of the Gd ions entering the octahedral site is reduced, the density of point defects in the crystal is decreased, and the afterglow intensity is reduced. A general formula of the Ce-doped gadolinium-aluminum-gallium garnet structure scintillation crystal is {Gd1-x-y-pScxCeyMep}3[Al1-q]5O12, 0<x?0.1, 0<y<0.02, 0?p?0.

Abstract: A gate device includes a base plate, a gate, and a power system for driving the gate to slide, the base plate has an opening, the gate is arranged on an inner side of the base plate, a rack is provided on an inner side of the gate in an opening-closing direction, and the power system includes a bi-directional power motor having a power output gear; a first transmission gear engaged with the power output gear and configured to drive a second transmission gear by a first transmission shaft, and the second transmission gear being engaged with the rack; and a third transmission gear engaged with the first transmission gear and configured to drive a sleeve component by a screw rod to make a reciprocation movement in a direction perpendicular to a sliding direction of the gate on a plane in parallel with the gate.

Abstract: A gate device includes a base plate, a gate, and a power system for driving the gate to slide, the base plate has an opening, the gate is arranged on an inner side of the base plate, a rack is provided on an inner side of the gate in an opening-closing direction, and the power system includes a bi-directional power motor having a power output gear; a first transmission gear engaged with the power output gear and configured to drive a second transmission gear by a first transmission shaft, and the second transmission gear being engaged with the rack; and a third transmission gear engaged with the first transmission gear and configured to drive a sleeve component by a screw rod to make a reciprocation movement in a direction perpendicular to a sliding direction of the gate on a plane in parallel with the gate.