Abstract: A power supply mechanism for a long-stroke seat has a wire harness accommodation box having at least one accommodation space and at least one opening; a drag chain bent and accommodated in the accommodation space, where a first end of the drag chain is relatively fixed to the wire harness accommodation box, and a second end of the drag chain passes through the opening and is slidably disposed in a slideway of a lower slide rail of the seat; a wire harness threaded in the drag chain, where a first end of the wire harness passes through a first end of a wire harness channel and the opening to be connected to a power supply, and a second end of the drag chain passes through a second end of the wire harness channel to be connected to an upper slide rail of the seat.

Abstract: A strong FXR small-molecule agonist, and a preparation method therefor and use thereof, the structure of the agonist being represented by formula (I), are provided. In the formula, each substituent is as defined in the description and the claims. The compound provided has the advantages of high FXR agonist activity, simple synthesis, easily available raw materials and the like, and can be used for preparing medicines for treating FXR related diseases.

Abstract: A quick fitting and protection mechanism for a wire harness in a slide rail has a drag chain for the wire harness to be threaded through; a drag chain towing support connected to an upper slide rail and slidable in a slideway of a lower slide rail with the upper slide rail, where the drag chain towing support has a drag chain port, a wire harness outlet, and a first channel affording communication between the drag chain port and the wire harness outlet, where one end of the drag chain is connected to the drag chain port; a wire harness guide support having a wire harness entry, a wire harness exit, and a second channel affording communication between the wire harness entry and the wire harness exit, where the wire harness entry is in rotatable communication with the wire harness exit.

Abstract: An FXR small molecule agonist and a preparation method therefor and a use thereof, having a structure as shown in formula (I). The compound represented by formula (I) has FXR agonistic activity and is capable of preparing drugs for treatment of FXR-related diseases.

Abstract: The present disclosure discloses a catalyst and a method for preparing 2-ethoxyphenol by catalytic depolymerization of lignin. The catalyst comprises sepiolite as a carrier and tungsten, nickel and molybdenum as active components supported on sepiolite. The catalyst for preparing 2-ethoxyphenol by catalytic depolymerization of lignin in the present disclosure can catalytically depolymerize lignin, realize the directional preparation of 2-ethoxyphenol from lignin, and co-produce lignin oil. It has a comparatively high selectivity for 2-ethoxyphenol and can achieve a lignin conversion rate of more than 95%, a 2-ethoxyphenol selectivity of more than 20% in a liquid product, and a yield of more than 100 mg/g of lignin.

Abstract: A quick fitting and protection mechanism for a wire harness in a slide rail has a drag chain for the wire harness to be threaded through; a drag chain towing support connected to an upper slide rail and slidable in a slideway of a lower slide rail with the upper slide rail, where the drag chain towing support has a drag chain port, a wire harness outlet, and a first channel affording communication between the drag chain port and the wire harness outlet, where one end of the drag chain is connected to the drag chain port; a wire harness guide support having a wire harness entry, a wire harness exit, and a second channel affording communication between the wire harness entry and the wire harness exit.

Abstract: A power supply mechanism for a long-stroke seat has a wire harness accommodation box having at least one accommodation space and at least one opening; a drag chain bent and accommodated in the accommodation space, where a first end of the drag chain is relatively fixed to the wire harness accommodation box, and a second end of the drag chain passes through the opening and is slidably disposed in a slideway of a lower slide rail of the seat; a wire harness threaded in the drag chain, where a first end of the wire harness passes through a first end of a wire harness channel and the opening to be connected to a power supply, and a second end of the drag chain passes through a second end of the wire harness channel to be connected to an upper slide rail of the seat.

Abstract: Embodiments of the present disclosure provide circuitry and a method for a gallium nitride (GaN) device. The circuitry includes a negative bias circuit configured to provide a negative bias voltage for a gate of the GaN device; a drain switch circuit configured to turn on or off a positive voltage for a drain of the GaN device; and a control circuit configured to control the drain switch circuit based on provision of the negative bias voltage, such that the positive voltage for the drain is turned on after a voltage of the gate reaches the negative bias voltage and turned off before the negative bias voltage completely disappears.

Abstract: A silicon carbide MOSFET device is disclosed. The silicon carbide MOSFET device includes a gate oxide layer which is constituted by a first gate oxide layer and a second gate oxide layer. A thickness of the second gate oxide layer is larger than a thickness of the first gate oxide layer. Through dividing the gate oxide layer into two parts with different thicknesses, i.e., enabling the gate oxide layer to have a staircase shape, an electric field strength of the gate oxide layer can be effectively reduced, while a threshold voltage and a gate control property of the device are not affected. An on-resistance of the device can be reduced through increasing a width of a JFET region. A method for manufacturing the silicon carbide MOSFET device is further disclosed.

Abstract: Embodiments of the present disclosure provide circuitry and a method for a gallium nitride (GaN) device. The circuitry includes a negative bias circuit configured to provide a negative bias voltage for a gate of the GaN device; a drain switch circuit configured to turn on or off a positive voltage for a drain of the GaN device; and a control circuit configured to control the drain switch circuit based on provision of the negative bias voltage, such that the positive voltage for the drain is turned on after a voltage of the gate reaches the negative bias voltage and turned off before the negative bias voltage completely disappears.

Abstract: A silicon carbide MOSFET device is disclosed. The silicon carbide MOSFET device includes a gate oxide layer which is constituted by a first gate oxide layer and a second gate oxide layer. A thickness of the second gate oxide layer is larger than a thickness of the first gate oxide layer. Through dividing the gate oxide layer into two parts with different thicknesses, i.e., enabling the gate oxide layer to have a staircase shape, an electric field strength of the gate oxide layer can be effectively reduced, while a threshold voltage and a gate control property of the device are not affected. An on-resistance of the device can be reduced through increasing a width of a JFET region. A method for manufacturing the silicon carbide MOSFET device is further disclosed.

Abstract: The present invention relates to novel glucocorticoid compounds. The invention also relates to methods of using these compounds, the synthesis of these compounds, and to compositions and formulations comprising the glucocorticoid compounds, and uses thereof.

Abstract: An electrochemical storage cell is disclosed which includes at least one cathode sheet, at least one anode sheet and at least one separator sheet combined to make a core. The core is housed within a rectangular shell with four sides and two ends, sealed with an air-tight seal. The cell further includes a blow out vent in at least one of the two ends of the shell. This blow out vent is adapted to open and release excess pressure above a predetermined level to thereby prevent catastrophic rupture of the shell.

Abstract: An electrochemical storage cell is disclosed which includes at least one cathode sheet, at least one anode sheet and at least one separator sheet combined to make a core. The core is housed within a rectangular shell with four sides and two ends, sealed with an air-tight seal. The cell further includes a blow out vent in at least one of the two ends of the shell. This blow out vent is adapted to open and release excess pressure above a predetermined level to thereby prevent catastrophic rupture of the shell.