Abstract: A dual-column-parallel image CCD sensor utilizes a dual-column-parallel readout circuit including two pairs of cross-connected transfer gates to alternately transfer pixel data (charges) from a pair of adjacent pixel columns to a shared output circuit at high speed with low noise. Charges transferred along the two adjacent pixel columns at a line clock rate are alternately passed by the transfer gates to a summing gate that is operated at twice the line clock rate to pass the image charges to the shared output circuit. A symmetrical Y-shaped diffusion is utilized in one embodiment to merge the image charges from the two pixel columns. A method of driving the dual-column-parallel CCD sensor with line clock synchronization is also described. A method of inspecting a sample using the dual-column-parallel CCD sensor is also described.

Abstract: A clean-water-washing function control method of a washing machine, the method comprising: step A: receiving a selection instruction of a laundry process; step B: enabling or disabling selection of a clean-water-washing function of the washing machine according to the selection instruction. A user at self-select the laundry process and decide whether to use the water-washing function, so that the control method not only helps guide the user in choosing to wash clothing in a water saving manner, but can also wash the clothing effectively, and protect the clothing and a recycled water filtration system. Moreover, an autonomous and intelligent washing environment is created for the user.

Abstract: A scanning electron microscope incorporates a multi-pixel solid-state electron detector. The multi-pixel solid-state detector may detect back-scattered and/or secondary electrons. The multi-pixel solid-state detector may incorporate analog-to-digital converters and other circuits. The multi-pixel solid state detector may be capable of approximately determining the energy of incident electrons and/or may contain circuits for processing or analyzing the electron signals. The multi-pixel solid state detector is suitable for high-speed operation such as at a speed of about 100 MHz or higher. The scanning electron microscope may be used for reviewing, inspecting or measuring a sample such as unpatterned semiconductor wafer, a patterned semiconductor wafer, a reticle or a photomask. A method of reviewing or inspecting a sample is also described.

Abstract: The present invention provides a method for synthesizing cationic bleach activators via a single-bath reaction, comprising steps of: separately dissolving 4-chloromethylbenoyl chloride and lactam in its respective solvent, adding an acid-binding agent to the lactam solution, next adding dropwisely 4-chloromethylbenoyl chloride solution into the lactam/acid binding-agent solution, and finally adding tertiary amine to the solution above to make a reaction solution, which is further treated with mixing and refluxing. The washed and dried final product is TBLC cationic bleach activator. The method of the present invention greatly simplifies the synthesizing process and lowers the stringency of reaction conditions for preparing cationic bleach activators (TBLC). At the same time, the present method produces TBLC cationic bleach activators with high yields, making it a suitable option for industrial production of these bleach activators.

Abstract: A high sensitivity image sensor comprises an epitaxial layer of silicon that is intrinsic or lightly p doped (such as a doping level less than about 1013 cm?3). CMOS or CCD circuits are fabricated on the front-side of the epitaxial layer. Epitaxial p and n type layers are grown on the backside of the epitaxial layer. A pure boron layer is deposited on the n-type epitaxial layer. Some boron is driven a few nm into the n-type epitaxial layer from the backside during the boron deposition process. An anti-reflection coating may be applied to the pure boron layer. During operation of the sensor a negative bias voltage of several tens to a few hundred volts is applied to the boron layer to accelerate photo-electrons away from the backside surface and create additional electrons by an avalanche effect. Grounded p-wells protect active circuits as needed from the reversed biased epitaxial layer.

Abstract: Pixel aperture size adjustment in a linear sensor is achieved by applying more negative control voltages to central regions of the pixel's resistive control gate, and applying more positive control voltages to the gate's end portions. These control voltages cause the resistive control gate to generate an electric field that drives photoelectrons generated in a selected portion of the pixel's light sensitive region into a charge accumulation region for subsequent measurement, and drives photoelectrons generated in other portions of the pixel's light sensitive region away from the charge accumulation region for subsequent discard or simultaneous readout. A system utilizes optics to direct light received at different angles or locations from a sample into corresponding different portions of each pixel's light sensitive region.

Abstract: A high sensitivity image sensor comprises an epitaxial layer of silicon that is intrinsic or lightly p doped (such as a doping level less than about 1013 cm?3). CMOS or CCD circuits are fabricated on the front-side of the epitaxial layer. Epitaxial p and n type layers are grown on the backside of the epitaxial layer. A pure boron layer is deposited on the n-type epitaxial layer. Some boron is driven a few nm into the n-type epitaxial layer from the backside during the boron deposition process. An anti-reflection coating may be applied to the pure boron layer. During operation of the sensor a negative bias voltage of several tens to a few hundred volts is applied to the boron layer to accelerate photo-electrons away from the backside surface and create additional electrons by an avalanche effect. Grounded p-wells protect active circuits as needed from the reversed biased epitaxial layer.

Abstract: The present invention discloses a network media information delivery controlling method. In the method, a computing device obtains network media information after a pause operation for a video is detected, obtains social element data corresponding to the network media information according to a login state of a user, and displays the network media information and the social element data corresponding to the network media information on a pause interface of the video. According to the present disclosure, attention for pause network media information of a video is improved, and waste for machines and network resources are reduced.

Abstract: A general methodology for highly sensitive and selective sensors and devices that can achieve portable, low-cost and quantitative detection of target enzymes and metabolites using a personal glucose meter (PGM) is disclosed. The method and sensors take advantage of the ability of PGMs to detect enzyme cofactors or coenzymes, such as nicotinamide adenine dinucleotide (NADH) or nicotinamide adenine dinucleotide phosphate (NADPH). Based on this observation, enzymes and metabolites involved in enzymatic reactions that consume or generate a coenzyme such as NADH or NADPH can be detected using PGMs, for example by measuring increases or decreases in NADH or NADPH levels. Methods of using such sensors and fluidic devices for detecting target enzymes and metabolites, for example to diagnose disease, are also provided.

Abstract: A high sensitivity image sensor comprises an epitaxial layer of silicon that is intrinsic or lightly p doped (such as a doping level less than about 1013 cm?3). CMOS or CCD circuits are fabricated on the front-side of the epitaxial layer. Epitaxial p and n type layers are grown on the backside of the epitaxial layer. A pure boron layer is deposited on the n-type epitaxial layer. Some boron is driven a few nm into the n-type epitaxial layer from the backside during the boron deposition process. An anti-reflection coating may be applied to the pure boron layer. During operation of the sensor a negative bias voltage of several tens to a few hundred volts is applied to the boron layer to accelerate photo-electrons away from the backside surface and create additional electrons by an avalanche effect. Grounded p-wells protect active circuits as needed from the reversed biased epitaxial layer.

Abstract: The present invention provides a method for synthesizing cationic bleach activators via a single-bath reaction, comprising steps of: separately dissolving 4-chloromethylbenoyl chloride and lactam in its respective solvent, adding an acid-binding agent to the lactam solution, next adding dropwisely 4-chloromethylbenoyl chloride solution into the lactam/acid binding-agent solution, and finally adding tertiary amine to the solution above to make a reaction solution, which is further treated with mixing and refluxing. The washed and dried final product is TBLC cationic bleach activator. The method of the present invention greatly simplifies the synthesizing process and lowers the stringency of reaction conditions for preparing cationic bleach activators (TBLC). At the same time, the present method produces TBLC cationic bleach activators with high yields, making it a suitable option for industrial production of these bleach activators.

Abstract: A scanning electron microscope incorporates a multi-pixel solid-state electron detector. The multi-pixel solid-state detector may detect back-scattered and/or secondary electrons. The multi-pixel solid-state detector may incorporate analog-to-digital converters and other circuits. The multi-pixel solid state detector may be capable of approximately determining the energy of incident electrons and/or may contain circuits for processing or analyzing the electron signals. The multi-pixel solid state detector is suitable for high-speed operation such as at a speed of about 100 MHz or higher. The scanning electron microscope may be used for reviewing, inspecting or measuring a sample such an unpatterned semiconductor wafer, a patterned semiconductor wafer, a reticle or a photomask. A method of reviewing or inspecting a sample is also described.

Abstract: A high sensitivity image sensor comprises an epitaxial layer of silicon that is intrinsic or lightly p doped (such as a doping level less than about 1013 cm?3). CMOS or CCD circuits are fabricated on the front-side of the epitaxial layer. Epitaxial p and n type layers are grown on the backside of the epitaxial layer. A pure boron layer is deposited on the n-type epitaxial layer. Some boron is driven a few nm into the n-type epitaxial layer from the backside during the boron deposition process. An anti-reflection coating may be applied to the pure boron layer. During operation of the sensor a negative bias voltage of several tens to a few hundred volts is applied to the boron layer to accelerate photo-electrons away from the backside surface and create additional electrons by an avalanche effect. Grounded p-wells protect active circuits as needed from the reversed biased epitaxial layer.

Abstract: Provided herein are sensors, kits that include such sensors, and methods for making and using such sensors. The sensors permit detection of a broad array of target molecules, such as nucleic acids (e.g., DNA and RNA), proteins, toxins, pathogens, cells, and metals, and can be used in combination with pH meters and pH paper. Thus, this disclosure provides a new methodology that allows pH meters and pH paper to be used for the detection of analytes other than pH.

Abstract: A vacuum heat insulating panel comprises outer wrapping material and core material. A getter is provided in the core material. The outer wrapping material is made by compounding wrapped material without aluminum foil on one side or both sides. The core material is made of an aggregate of glass fiber with uniform laminated structure, and the diameter of the glass fiber is 1-3 ?m. A method for manufacturing the vacuum heat insulating panel is also disclosed. Due to very high vacuum degree in the vacuum heat insulating panel, the heat transferring speed is reduced. And, because of the outer wrapping material without aluminum foil layer, the edge thermal bridge effect is eliminated and the heat insulation effect is very good.

Abstract: Disclosed are methods adapted to calibrate a liquid transfer system. The methods include providing a probe having a fluidly-coupled pressure sensor, the pressure sensor adapted to sense an aspiration pressure associated with the probe, performing one or more air aspirations and taking one or more pressure readings with the pressure sensor, and using one or more of the pressure readings to calibrate the pressure sensor. A novel liquid transfer system is also disclosed, as are other aspects.

Abstract: A differential frame-based scheduling scheme is employed for input queued (IQ) switches with virtual output queues (VOQ). Differential scheduling adjusts previous scheduling based on a traffic difference in two consecutive frames. To guarantee quality of service (QoS) with low complexity, the adjustment first reserves some slots for each port pair in each frame, then releases surplus allocations and supplements deficit allocations according to a dichotomy order, designed for high throughput, low jitter, fairness, and low computational complexity.

Abstract: A method sets certain downstream traffic scheduling rules at an optical line terminal OLT and certain sleep control rules at optical network units ONUs. Both downstream traffic scheduling rules and sleep control rules are common information owned by both the OLT and ONUs. The method sets the traffic scheduling rules that each ONU is allocated with some time slots every cycle if the ONU has downstream traffic. Rather than using a control message to notify ONUs with their queue status, the method lets ONUs infer whether its downstream queue is empty or not based on downstream traffic scheduling and lets the OLT infer the status of an ONU based on sleep control rules.

Abstract: A method for small scale time increased bandwidth assignment to increase optical network unit ONU downstream energy efficiency includes splitting of downstream scheduling cycles into multiple rounds, using selective ones of the multiple rounds as probing rounds and other than said selective ones of the multiple rounds as fixed rounds, the probing rounds and fixed rounds being cooperatively selected for energy efficiency without limitations in length of the downstream scheduling cycles.

Abstract: Systems and methods for process aware metrology are provided. One method includes selecting nominal values and one or more different values of process parameters for one or more process steps used to form the structure on the wafer, simulating one or more characteristics of the structure that would be formed on the wafer using the nominal values, and determining parameterization of the optical model based on how the one or more characteristics of the structure vary between at least two of the nominal values and the one or more different values.