Patents by Inventor Jingjun Yang

Jingjun Yang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 9203528
    Abstract: A method for reducing frequency band interference for a multi-mode terminal, including: using a first frequency band to establish a first service in a first network standard; using a second frequency band to establish a second service in a second network standard; when determining that the first frequency band and the second frequency band interfere with each other, updating a frequency band capability support state or reporting an interference collision event to a network corresponding to a low-priority service, so that the network corresponding to the low-priority service updates a frequency band used by the low-priority service to a frequency band that has less interference with a frequency band used by a high-priority service, and establishing the low-priority service according to the updated frequency band. According to the embodiments of the present invention, interference between frequency bands of the multi-mode terminal may be reduced.
    Type: Grant
    Filed: July 18, 2013
    Date of Patent: December 1, 2015
    Assignee: HUAWEI TECHNOLOGIES CO., LTD.
    Inventors: Xiaochun Zheng, Xuehong Zeng, Jingjun Yang
  • Patent number: 9139796
    Abstract: The present invention provides methods and formulations for reducing or inhibiting increase in the concentration of microbes in a water-based fluid. The methods and formulations of the present invention use an oxazolidine compound and a hydroxymethyl-substituted phosphorus compound selected from the group consisting of tetrakis(hydroxymethyl)phosphonium salts, C1-C3 alkyl- and alkenyltris(hydroxymethyl)phosphonium salts and tris(hydroxymethyl)phosphine. The methods and formulations of the present invention can be useful in treating water contaminated with aerobic or anaerobic bacteria in oilfield and other industrial applications.
    Type: Grant
    Filed: July 21, 2008
    Date of Patent: September 22, 2015
    Assignee: Dow Global Technologies LLC
    Inventors: Bei Yin, Jingjun Yang, Pierre Marie Lenoir
  • Patent number: 8952199
    Abstract: The present invention provides methods and formulations for reducing or inhibiting increase in the concentration of microbes in a water-based fluid. The methods and formulations of the present invention use glutaraldehyde and a hydroxymethyl-substituted phosphorus compound selected from the group consisting of tetrakis(hydroxymethyl)phosphonium salts, C1-C3 alkyl- and alkenyltris(hydroxymethyl)phosphonium salts and tris(hydroxymethyl)phosphine, in a ratio of hydroxymethyl-substituted phosphorus compound to glutaraldehyde in the range of about 2:1 to about 7:1, or about 3.5:1 to about 7.5:1. The methods and formulations of the present invention can be useful in treating water contaminated with aerobic or anaerobic bacteria in oilfield and other industrial applications.
    Type: Grant
    Filed: July 21, 2008
    Date of Patent: February 10, 2015
    Assignee: Dow Global Technologies LLC
    Inventors: Bei Yin, Jingjun Yang
  • Publication number: 20130303235
    Abstract: A method for reducing frequency band interference for a multi-mode terminal, including: using a first frequency band to establish a first service in a first network standard; using a second frequency band to establish a second service in a second network standard; when determining that the first frequency band and the second frequency band interfere with each other, updating a frequency band capability support state or reporting an interference collision event to a network corresponding to a low-priority service, so that the network corresponding to the low-priority service updates a frequency band used by the low-priority service to a frequency band that has less interference with a frequency band used by a high-priority service, and establishing the low-priority service according to the updated frequency band. According to the embodiments of the present invention, interference between frequency bands of the multi-mode terminal may be reduced.
    Type: Application
    Filed: July 18, 2013
    Publication date: November 14, 2013
    Inventors: Xiaochun ZHENG, Xuehong ZENG, Jingjun YANG
  • Publication number: 20120034312
    Abstract: This invention relates to the use of 4-isopropyl-3-methylphenol (IPMP) for combating inflammation and compositions comprising IPMP for such use.
    Type: Application
    Filed: April 1, 2010
    Publication date: February 9, 2012
    Inventor: Jingjun Yang
  • Publication number: 20110207817
    Abstract: This invention relates to alkyl parabens, their use as anti-inflammatory agents and compositions containing them.
    Type: Application
    Filed: November 10, 2009
    Publication date: August 25, 2011
    Inventors: Sean M. Wetterer, Jingjun Yang
  • Publication number: 20100298275
    Abstract: The present invention provides methods and formulations for reducing or inhibiting increase in the concentration of microbes in a water-based fluid. The methods and formulations of the present invention use glutaraldehyde and a hydroxymethyl-substituted phosphorus compound selected from the group consisting of tetrakis(hydroxymethyl)phosphonium salts, C1-C3 alkyl- and alkenyltris(hydroxymethyl)phosphonium salts and tris(hydroxymethyl)phosphine, in a ratio of hydroxymethyl-substituted phosphorus compound to glutaraldehyde in the range of about 2:1 to about 7:1, or about 3.5:1 to about 7.5:1. The methods and formulations of the present invention can be useful in treating water contaminated with aerobic or anaerobic bacteria in oilfield, natural gas field and other industrial applications.
    Type: Application
    Filed: July 21, 2008
    Publication date: November 25, 2010
    Applicant: Dow Global Technologies Inc.
    Inventors: Bei Yin, Jingjun Yang
  • Publication number: 20100286096
    Abstract: The present invention provides methods and formulations for reducing or inhibiting increase in the concentration of microbes in a water-based fluid. The methods and formulations of the present invention use an oxazolidine compound and a hydroxymethyl-substituted phosphorus compound selected from the group consisting of tetrakis(hydroxymethyl)phosphonium salts, C1-C3 alkyl- and alkenyltris(hydroxymethyl)phosphonium salts and tris(hydroxymethyl)phosphine. The methods and formulations of the present invention can be useful in treating water contaminated with aerobic or anaerobic bacteria in oilfield, natural gas field, and other industrial applications.
    Type: Application
    Filed: July 21, 2008
    Publication date: November 11, 2010
    Applicant: Dow Global Technologies Inc
    Inventors: Bei Yin, Jingjun Yang, Pierre Marie Lenoir
  • Publication number: 20080095951
    Abstract: A process for forming low dielectric constant dielectric films for the production of microelectronic devices. A dielectric layer is formed on a substrate by chemical vapor depositing a monomeric or oligomeric dielectric precursor in a chemical vapor deposit apparatus, or a reaction product formed from the precursor in the apparatus, onto a substrate, to form a layer on a surface of a substrate. After optionally heating the layer at a sufficient time and temperature to dry the layer, the layer is then exposed to electron beam radiation, for a sufficient time, temperature, electron beam energy and electron beam dose to modify the layer. The electron beam exposing step is conducted by overall exposing the dielectric layer with a wide, large beam of electron beam radiation from a large-area electron beam source.
    Type: Application
    Filed: December 17, 2007
    Publication date: April 24, 2008
    Inventors: MATTHEW ROSS, Heiki Thompson, Jingjun Yang
  • Patent number: 7309514
    Abstract: A process for forming low dielectric constant dielectric films for the production of microelectronic devices. A dielectric layer is formed on a substrate by chemical vapor depositing a monomeric or oligomeric dielectric precursor in a chemical vapor deposit apparatus, or a reaction product formed from the precursor in the apparatus, onto a substrate, to form a layer on a surface of a substrate. After optionally heating the layer at a sufficient time and temperature to dry the layer, the layer is then exposed to electron beam radiation, for a sufficient time, temperature, electron beam energy and electron beam dose to modify the layer. The electron beam exposing step is conducted by overall exposing the dielectric layer with a wide, large beam of electron beam radiation from a large-area electron beam source.
    Type: Grant
    Filed: January 14, 2003
    Date of Patent: December 18, 2007
    Assignee: Applied Materials, Inc.
    Inventors: Matthew Ross, Heike Thompson, Jingjun Yang
  • Publication number: 20030134039
    Abstract: A process for forming low dielectric constant dielectric films for the production of microelectronic devices. A dielectric layer is formed on a substrate by chemical vapor depositing a monomeric or oligomeric dielectric precursor in a chemical vapor deposit apparatus, or a reaction product formed from the precursor in the apparatus, onto a substrate, to form a layer on a surface of a substrate. After optionally heating the layer at a sufficient time and temperature to dry the layer, the layer is then exposed to electron beam radiation, for a sufficient time, temperature, electron beam energy and electron beam dose to modify the layer. The electron beam exposing step is conducted by overall exposing the dielectric layer with a wide, large beam of electron beam radiation from a large-area electron beam source.
    Type: Application
    Filed: January 14, 2003
    Publication date: July 17, 2003
    Inventors: Matthew Ross, Heike Thompson, Jingjun Yang
  • Patent number: 6582777
    Abstract: A process for forming low dielectric constant dielectric films for the production of microelectronic devices. A dielectric layer is formed on a substrate by chemical vapor depositing a monomeric or oligomeric dielectric precursor in a chemical vapor deposit apparatus, or a reaction product formed from the precursor in the apparatus, onto a substrate, to form a layer on a surface of a substrate. After optionally heating the layer at a sufficient time and temperature to dry the layer, the layer is then exposed to electron beam radiation, for a sufficient time, temperature, electron beam energy and electron beam dose to modify the layer. The electron beam exposing step is conducted by overall exposing the dielectric layer with a wide, large beam of electron beam radiation from a large-area electron beam source.
    Type: Grant
    Filed: February 17, 2000
    Date of Patent: June 24, 2003
    Assignee: Applied Materials Inc.
    Inventors: Matthew Ross, Heike Thompson, Jingjun Yang
  • Patent number: 6235353
    Abstract: Production of a dielectric coating on a substrate whereby a poly(arylene ethers) or fluorinated poly(arylene ethers) layer is cured by exposure to electron beam radiation. A wide area electron beam is used which causes chemical reactions to occur in the polymer structure which are thought to cause crosslinks between polymer chains. The crosslinks lead to higher mechanical strength and higher glass transition temperature, lower thermal expansion coefficient, greater thermal-chemical stability and greater resistance to aggressive organic solvents. The polymer layer may also be optionally heated, thermally annealed, and/or exposed to UV actinic light.
    Type: Grant
    Filed: February 5, 1999
    Date of Patent: May 22, 2001
    Assignee: AlliedSignal Inc.
    Inventors: James S. Drage, Jingjun Yang, Dong Kyu Choi
  • Patent number: 6177143
    Abstract: Electron beam cured siloxane dielectric films and to a process for their manufacture which are useful in the production of integrated circuits. A siloxane polymer having in one aspect less than 40 Mole percent carbon containing substituents, and in another aspect at least approximately 40 Mole percent carbon containing substituents is cured by a wide beam electron beam exposure.
    Type: Grant
    Filed: January 6, 1999
    Date of Patent: January 23, 2001
    Inventors: Carl Treadwell, Jingjun Yang, Matthew Ross
  • Patent number: 6080526
    Abstract: A process for the preparation of substrates used in the manufacture of integrated circuits wherein spin-on low dielectric constant (low-k) polymer films are applied on semiconductor substrates. A non-etchback processing of spin-on low-k polymer films, without losing the low dielectric constant feature of the film, especially in between metal lines, is achieved utilizing electron beam radiation. A polymeric dielectric film is applied and dried onto a substrate and exposed to electron beam radiation under conditions sufficient to partially cure the dielectric layer. The exposing forms a relatively more hardened topmost portion of the dielectric layer and a relatively less hardened underlying portion of the dielectric layer.
    Type: Grant
    Filed: February 24, 1998
    Date of Patent: June 27, 2000
    Assignee: AlliedSignal Inc.
    Inventors: Jingjun Yang, Lynn Forester, Dong Kyu Choi, Shi-Qing Wang, Neil H. Hendricks
  • Patent number: 6042994
    Abstract: Nanoporous silica dielectric films are modified by electron beam exposure after an optional hydrophobic treatment by an organic reactant. After formation of the film onto a substrate, the substrate is placed inside a large area electron beam exposure system. The resulting films are characterized by having a low dielectric constant and low water or silanol content compared to thermally cured films. Also, e-beam cured films have higher mechanical strength and better resistance to chemical solvents and oxygen plasmas compared to thermally cured films.
    Type: Grant
    Filed: January 8, 1999
    Date of Patent: March 28, 2000
    Assignee: AlliedSignal Inc.
    Inventors: Jingjun Yang, James S. Drage, Lynn Forester