Abstract: Disclosed are a memory array, a memory, a preparing method and a writing method. Some embodiments relate to a memory array for a magnetoresistive random access memory and a manufacturing method thereof. The memory array includes: a plurality of memory cells arranged in an array and a conductor layer; each of the memory cells includes: a write transistor, a first end of which is coupled to top electrode wiring; a magnetic tunnel junction MTJ, one end of which close to a reference layer is coupled to a second end of the write transistor; a side surface of the conductor layer is coupled to end faces of one end of all of the magnetic tunnel junctions MTJs close to a free layer.

Abstract: Disclosed are a memory array, a memory, a preparing method and a writing method. Some embodiments relate to a memory array for a magnetoresistive random access memory and a manufacturing method thereof. The memory array includes: a plurality of memory cells arranged in an array and a conductor layer; each of the memory cells includes: a write transistor, a first end of which is coupled to top electrode wiring; a magnetic tunnel junction MTJ, one end of which close to a reference layer is coupled to a second end of the write transistor; a side surface of the conductor layer is coupled to end faces of one end of all of the magnetic tunnel junctions MTJs close to a free layer.