Abstract: Embodiments of 3D memory devices with a structurally-reinforced semiconductor plug and methods for forming the same are disclosed. In an example, a method for forming a 3D memory device is disclosed. A dielectric stack is formed on a substrate. The dielectric stack includes a plurality of interleaved dielectric layers and sacrificial layers. An opening extending vertically through the dielectric stack is formed. A shallow recess is formed by removing a part of a sacrificial layer abutting a sidewall of the opening. The sacrificial layer is at a lower portion of the dielectric stack. A semiconductor plug is formed at a lower portion of the opening. A part of the semiconductor plug protrudes into the shallow recess. A channel structure is formed above and in contact with the semiconductor plug in the opening. A memory stack including a plurality of conductor/dielectric layer pairs is formed by replacing, with a plurality of conductor layers, the sacrificial layers in the dielectric stack.

Abstract: Embodiments of 3D memory devices with a structurally-reinforced semiconductor plug and methods for forming the same are disclosed. In an example, a method for forming a 3D memory device is disclosed. A dielectric stack is formed on a substrate. The dielectric stack includes a plurality of interleaved dielectric layers and sacrificial layers. An opening extending vertically through the dielectric stack is formed. A shallow recess is formed by removing a part of a sacrificial layer abutting a sidewall of the opening. The sacrificial layer is at a lower portion of the dielectric stack. A semiconductor plug is formed at a lower portion of the opening. A part of the semiconductor plug protrudes into the shallow recess. A channel structure is formed above and in contact with the semiconductor plug in the opening. A memory stack including a plurality of conductor/dielectric layer pairs is formed by replacing, with a plurality of conductor layers, the sacrificial layers in the dielectric stack.

Abstract: The invention provides an effective and environmentally friendly antibody protective agent and the methods of using it in immunological detection. The antibody protective agent helps antibody to maintain relatively high immunological activity at room temperature. Working electrodes coated with antibodies and the antibody protective agent are installed in immunological detection devices to enhance stability and accuracy of immunological detection. The antibody protective agent is effectively used in the detection of a variety of toxins, for example, aflatoxin, staphylococcal enterotoxin, algae toxin, and vomitoxin.

Abstract: The invention provides an effective and environmentally friendly antibody protective agent and the methods of using it in immunological detection. The antibody protective agent helps antibody to maintain relatively high immunological activity at room temperature. Working electrodes coated with antibodies and the antibody protective agent are installed in immunological detection devices to enhance stability and accuracy of immunological detection. The antibody protective agent is effectively used in the detection of a variety of toxins, for example, aflatoxin, staphylococcal enterotoxin, algae toxin, and vomitoxin.