Abstract: Provided are method and system of calculating cross-section area and included angle of three-dimensional blood vessel branch, comprising: obtaining the contours of a main blood vessel and a branch blood vessel; determining connecting points of the main blood vessel and the branch blood vessel, a three-dimensional branch outer contour, and an initial normal vector of a branch section; determining the position of the branch section at the branch connecting part and an intersecting cross-section of the branch section and the branch outer contour; rotating the three-dimensional branch cross-section contour to obtain an equivalent two-dimensional branch cross-section contour, and calculating the area of the two-dimensional branch cross-section contour; obtaining branch cross-section areas and corresponding normal vectors thereof; and taking the minimum branch cross-section area as the cross-section area of this segment of branch blood vessel, and determining the included angle between the branch blood vessel and t

Abstract: The present teachings provide a coating composition (a passivation formulation) for preparing a coating material in a metal oxide thin film transistor, where the coating material comprises a polymer blend including a polymer and a stabilizing agent. Incorporation of a stabilizing agent according to the present teachings in the coating material can lead to improved device performance of the metal oxide thin film transistor, in particular, reduced shift in the threshold voltage and long-term bias-stress stability.

Abstract: Disclosed are new compounds having semiconducting properties. Such compounds can be processed into thin film semiconductors that exhibit high carrier mobility and/or good current modulation characteristics.

Abstract: Disclosed are polysulfone-based materials that can be used as active and/or passive components in various electronic, optical, and optoelectronic devices, particularly, metal-oxide-semiconductor field-effect transistors. For example, various metal-oxide-semiconductor field-effect transistors can include a dielectric layer and/or a passivation layer prepared from such polysulfone-based materials and exhibit good device performance.

Abstract: Disclosed are polysulfone-based materials that can be used as active and/or passive components in various electronic, optical, and optoelectronic devices, particularly, metal-oxide-semiconductor field-effect transistors. For example, various metal-oxide-semiconductor field-effect transistors can include a dielectric layer and/or a passivation layer prepared from such polysulfone-based materials and exhibit good device performance.