Abstract: There is provided a light emitting device, for example a grow-light, comprising: a first solid-state light source that generates blue light with a blue photon flux; and a second solid-state light source that generates red light with a red photon flux; wherein a ratio of the blue photon flux to red photon flux is from about 1:3 to about 3:1. It may be that the broadband blue light substantially matches at least one of: the absorption peak wavelength of chlorophyll-a; the absorption peak wavelength of chlorophyll-b; and the absorption peak wavelength of carotenoid.

Abstract: A light-emitting module and a light-emitting diode are provided. The light-emitting diode includes an epitaxial light-emitting structure to generate a light beam with a broadband blue spectrum. A spectrum waveform of the broadband blue spectrum has a full width at half maximum (FWHM) larger than or equal to 30 nm. The spectrum waveform has a plurality of peak inflection points, and a difference between two wavelength values to which any two adjacent ones of the peak inflection points respectively correspond is less than or equal to 18 nm.

Abstract: A light-emitting device is provided. The light-emitting device generates a white light and includes at least one light-emitting diode. The at least one light-emitting diode generates a light beam with a broadband blue spectrum and includes a first semiconductor layer, a second semiconductor layer and a multiple quantum well structure. The multiple quantum well structure is located between the first semiconductor layer and the second semiconductor layer, and includes well layers and barrier layers. The well layers include a first well layer, a second well layer and third well layers different in indium concentrations. The first well layer has the largest indium concentration, and the third well layers have the smallest indium concentration.

Abstract: There is provided a light emitting device, for example a grow-light, comprising: a first solid-state light source that generates blue light with a blue photon flux; and a second solid-state light source that generates red light with a red photon flux; wherein a ratio of the blue photon flux to red photon flux is from about 1:3 to about 3:1. It may be that the broadband blue light substantially matches at least one of: the absorption peak wavelength of chlorophyll-a; the absorption peak wavelength of chlorophyll-b; and the absorption peak wavelength of carotenoid.

Abstract: A light-emitting diode is provided. The light-emitting diode includes a P-type semiconductor layer, a N-type semiconductor layer, and a light-emitting stack located therebetween. The light-emitting stack includes a plurality of well layers and a plurality of barrier layers that are alternately stacked, the well layers includes at least one first well layer, at least one second well layer, and third well layers that have different indium concentrations. The first well layer has the largest indium concentration, and the third well layers have the smallest indium concentration. Three of well layers that are closest to the P-type semiconductor layer are the third well layers, and the first well layer is closer to the N-type semiconductor layer than the P-type semiconductor layer.

Abstract: There is provided a light emitting device, for example a grow-light, comprising: a grow-light comprising: a broadband blue solid-state light source that generates broadband blue light with a peak emission wavelength from 420 nm to 495 nm and a full width at half maximum of at least 30 nm. It may be that the broadband blue light substantially matches at least one of: the absorption peak wavelength of chlorophyll-a; the absorption peak wavelength of chlorophyll-b; and the absorption peak wavelength of carotenoid.

Abstract: A light emitting diode package structure is provided. The light emitting diode package structure includes first and second chips. A value of an intensity of a peak wavelength of a first shoulder wave of the first chip divided by an intensity of a peak wavelength of a first main wave of the first chip is defined as a first intensity ratio. A value of an intensity of a peak wavelength of a second shoulder wave of the second chip divided by an intensity of a peak wavelength of a second main wave of the second chip is defined as a second intensity ratio. The first and second chips satisfy “a difference between the intensities of the peak wavelengths of the first and second main waves being less than or equal to 2.5 nanometers” and “a difference between the first and second intensity ratios being greater than 0.1”.

Abstract: A light emitting device is provided. The light emitting device includes a light emitting assembly having a first light emitting diode package structure and a second light emitting diode package structure. The light emitting assembly can generate a mixed light source having a spectral deviation index. The first light emitting diode package structure can generate a first light source having a first spectral deviation index. The second light emitting diode package structure can generate a second light source having a second spectral deviation index. When the first light source and the second light source are within a range from 460 to 500 nm, a sum of the first spectral deviation index and the second spectral deviation index is within a range from ?0.3 to 0.3, and a difference between the first spectral deviation index and the second spectral deviation index is at least greater than 0.2.

Abstract: A light-emitting module and a light-emitting diode are provided. The light-emitting diode includes an epitaxial light-emitting structure to generate a light beam with a broadband blue spectrum. A spectrum waveform of the broadband blue spectrum has a full width at half maximum (FWHM) larger than or equal to 30 nm. The spectrum waveform has a plurality of peak inflection points, and a difference between two wavelength values to which any two adjacent ones of the peak inflection points respectively correspond is less than or equal to 18 nm.

Abstract: A light-emitting module and a light-emitting diode are provided. The light-emitting diode includes an epitaxial light-emitting structure to generate a light beam with a broadband blue spectrum. A spectrum waveform of the broadband blue spectrum has a full width at half maximum (FWHM) larger than or equal to 30 nm. The spectrum waveform has a plurality of peak inflection points, and a difference between two wavelength values to which any two adjacent ones of the peak inflection points respectively correspond is less than or equal to 18 nm.

Abstract: There is provided a light emitting device, for example a grow-light, comprising: a grow-light comprising: a broadband blue solid-state light source that generates broadband blue light with a peak emission wavelength from 420 nm to 495 nm and a full width at half maximum of at least 30 nm. It may be that the broadband blue light substantially matches at least one of: the absorption peak wavelength of chlorophyll-a; the absorption peak wavelength of chlorophyll-b; and the absorption peak wavelength of carotenoid.

Abstract: A light-emitting diode is provided. The light-emitting diode includes a P-type semiconductor layer, a N-type semiconductor layer, and a light-emitting stack located therebetween. The light-emitting stack includes a plurality of well layers and a plurality of barrier layers that are alternately stacked, the well layers includes at least one first well layer, at least one second well layer, and third well layers that have different indium concentrations. The first well layer has the largest indium concentration, and the third well layers have the smallest indium concentration. Three of well layers that are closest to the P-type semiconductor layer are the third well layers, and the first well layer is closer to the N-type semiconductor layer than the P-type semiconductor layer.

Abstract: An LED package structure includes a substrate and a light-emitting array. The substrate has a die bond area, and the light-emitting array is disposed in the die bond area. Each first light-emitting unit of the light-emitting array includes a first light-emitting chip and a first wavelength conversion layer of the light-emitting chip, each second light-emitting unit of the light-emitting array includes a second light-emitting chip and a second wavelength conversion layer covering the second light-emitting chip. A first light beam includes a first emission light generated by exciting the first wavelength conversion layer, and the second light beam includes a second emission light generated by exciting the second wavelength conversion layer, and the difference between the first and second emission light peak wavelengths is at least 30 nm.

Abstract: A light-emitting diode is provided. The light-emitting diode includes a multiple quantum well structure to generate a light beam with a broadband blue spectrum. The light beam contains a first sub-light beam with a first wavelength and a second sub-light beam with a second wavelength. A difference between the first wavelength and the second wavelength ranges from 1 nm to 50 nm, and the light-emitting diode has a Wall-Plug-Efficiency (WPE) of greater than 0.45 under an operating current density of 120 mA/mm2.

Abstract: A light-emitting diode is provided. The light-emitting diode includes a multiple quantum well structure to generate a light beam with a broadband blue spectrum. The light beam contains a first sub-light beam with a first wavelength and a second sub-light beam with a second wavelength. A difference between the first wavelength and the second wavelength ranges from 1 nm to 50 nm, and the light-emitting diode has a Wall-Plug-Efficiency (WPE) of greater than 0.45 under an operating current density of 120 mA/mm2.

Abstract: A light-emitting diode package component is provided. The light-emitting diode package component includes a substrate, a light-emitting chip, a die attach adhesive, a reflective structure, and a molding layer. The light-emitting chip is disposed on the substrate for generating an initial light beam with an initial wavelength. The die attach adhesive is disposed between the light-emitting chip and the substrate so that the light-emitting chip is mounted on the substrate. The reflective structure defining an accommodating space is disposed on the substrate and surrounds the light-emitting chip. The molding layer is disposed in the accommodating space and covers the light-emitting chip. The die attach adhesive includes a first wavelength conversion material, a portion of the initial light beam entering into the die attach adhesive excites the first wavelength conversion material to produce an excitation light with a first wavelength that is greater than the initial wavelength.

Abstract: A light emitting device is provided. The light emitting device includes a light emitting assembly having a first light emitting diode package structure and a second light emitting diode package structure. The light emitting assembly can generate a mixed light source having a spectral deviation index. The first light emitting diode package structure can generate a first light source having a first spectral deviation index. The second light emitting diode package structure can generate a second light source having a second spectral deviation index. When the first light source and the second light source are within a range from 460 to 500 nm, a sum of the first spectral deviation index and the second spectral deviation index is within a range from ?0.3 to 0.3, and a difference between the first spectral deviation index and the second spectral deviation index is at least greater than 0.2.

Abstract: A light emitting diode package structure is provided. The light emitting diode package structure includes first and second chips. A value of an intensity of a peak wavelength of a first shoulder wave of the first chip divided by an intensity of a peak wavelength of a first main wave of the first chip is defined as a first intensity ratio. A value of an intensity of a peak wavelength of a second shoulder wave of the second chip divided by an intensity of a peak wavelength of a second main wave of the second chip is defined as a second intensity ratio. The first and second chips satisfy “a difference between the intensities of the peak wavelengths of the first and second main waves being less than or equal to 2.5 nanometers” and “a difference between the first and second intensity ratios being greater than 0.1”.

Abstract: A light-emitting diode package component is provided. The light-emitting diode package component includes a substrate, a light-emitting chip, a die attach adhesive, a reflective structure, and a molding layer. The light-emitting chip is disposed on the substrate for generating an initial light beam with an initial wavelength. The die attach adhesive is disposed between the light-emitting chip and the substrate so that the light-emitting chip is mounted on the substrate. The reflective structure defining an accommodating space is disposed on the substrate and surrounds the light-emitting chip. The molding layer is disposed in the accommodating space and covers the light-emitting chip. The die attach adhesive includes a first wavelength conversion material, a portion of the initial light beam entering into the die attach adhesive excites the first wavelength conversion material to produce an excitation light with a first wavelength that is greater than the initial wavelength.

Abstract: A light-emitting module and a light-emitting diode are provided. The light-emitting diode includes an epitaxial light-emitting structure to generate a light beam with a broadband blue spectrum. A spectrum waveform of the broadband blue spectrum has a full width at half maximum (FWHM) larger than or equal to 30 nm. The spectrum waveform has a plurality of peak inflection points, and a difference between two wavelength values to which any two adjacent ones of the peak inflection points respectively correspond is less than or equal to 18 nm.