Abstract: A display substrate, comprising a base substrate and a scan drive control circuit which is disposed in a non-display area of the base substrate. The scan drive control circuit comprises an input circuit, an output control circuit, and an output circuit. The output control circuit is connected to the input circuit and the output circuit. The output control circuit comprises a first node control capacitor and a second node control capacitor. The length of the first node control capacitor in a first direction LC1k, the length of the second node control capacitor in the first direction LC2k and the length of the scan drive control circuit in the first direction LY satisfy the following formula: L C ? 1 ? k L Y < L C ? 2 ? k L Y ; L C ? 1 ? k L Y < 0.2 .

Abstract: A display substrate and a display apparatus. The display substrate has a display region (AA) and an opening (O) located in the display region (AA). The opening (O) penetrates the display substrate, and the display substrate comprises a base substrate (BS), a driving circuit layer, a light-emitting device layer, an encapsulation layer and a touch layer (TL). The driving circuit layer is arranged on the base substrate (BS), and comprises a first signal line (L1) at least partially surrounding the opening (O). The light-emitting device layer is arranged on the side of the driving circuit layer distant from the base substrate (BS). The encapsulation layer is arranged on the side of the light-emitting device layer distant from the base substrate (BS).

Abstract: The present invention relates to a hole-jetting type reactor and its applications, in particular to a process for the production of isocyanates by the phosgenation of aliphatic or aromatic diamines or triamines in the gas phase using this reactor. The present invention achieves a good mixing and reacting result of the gas-phase phosgenation reaction at a high temperature by improving the mixing of reactants in the reactor to reduce the possibility of forming swirls and eliminate negative pressure produced at a local jet area, which can finally reduce back-mixing and formation of solid by-products.

Abstract: The present invention relates to a hole-jetting type reactor and its applications, in particular to a process for the production of isocyanates by the phosgenation of aliphatic or aromatic diamines or triamines in the gas phase using this reactor. The present invention achieves a good mixing and reacting result of the gas-phase phosgenation reaction at a high temperature by improving the mixing of reactants in the reactor to reduce the possibility of forming swirls and eliminate negative pressure produced at a local jet area, which can finally reduce back-mixing and formation of solid by-products.