Abstract: A laser lift-off integrated apparatus includes a laser light source configured to perform laser lift-off on a wafer to undergo lift-off, a lift-off chamber configured to bear the wafer to undergo lift-off, a heater configured to provide temperature required by the wafer to undergo lift-off during a lift-off process, a profile measuring device configured to acquire surface profile information of the wafer to undergo lift-off, and a movable device configured to, according to the surface profile information acquired by the profile measuring device, adjust a height of the wafer to undergo lift-off such that a focus of the laser light source is at a position where the wafer to undergo lift-off is to undergo lift-off.

Abstract: Disclosed are a light emitting diode and a method for manufacturing a light emitting diode. The light emitting diode includes a first-type layer, a light emitting layer, a second-type layer and an electrode layer; the first-type layer includes a first-type gallium nitride; the light emitting layer is located on the first-type layer; the light emitting layer includes a quantum point; the second-type layer is located on the light emitting layer; the second-type layer includes a second-type gallium nitride or an indium tin oxide; and the electrode layer is located on the second-type layer.

Abstract: A soldering apparatus and a soldering method using the same are provided. The soldering apparatus includes a light source configured to supply light radiation required for soldering; and a mask disposed on the light path of the light source and including a light-shielding portion and multiple light-transmissive portions. The multiple light-transmissive portions are spaced apart by the light-shielding portion and are configured for the light radiation to pass through. The mask has different transmittances so that the magnitude of the light power irradiated on a substrate can be controlled. Therefore, devices can not only be soldered in batches but also be prevented from being damaged caused by inconsistent requirements on light powers.

Abstract: Disclosed are a light emitting diode and a method for manufacturing a light emitting diode. The light emitting diode includes a first-type layer, a light emitting layer, a second-type layer and an electrode layer; the first-type layer includes a first-type gallium nitride; the light emitting layer is located on the first-type layer; the light emitting layer includes a quantum point; the second-type layer is located on the light emitting layer; the second-type layer includes a second-type gallium nitride; and the electrode layer is located on the second-type layer.

Abstract: A linear showerhead for growing GaN, including a first gas base, a second gas base, and a third gas base. First central gas passages are disposed in the middle of the first gas base. A first gap is disposed between two adjacent first central gas passages. A first nozzle is disposed at the bottom of a first central gas passage. The second gas base is disposed on the first gas base. Second central gas passages are disposed in the middle of the second gas base. A second gap is disposed between two adjacent second central gas passages. Two sides of a second central gas passage are provided with a second nozzle. The third gas base includes third central gas passages. A third central gas passage penetrates a first gap and a second gap. A third nozzle is disposed at the bottom of a third central gas passage.

Abstract: Provided are a display module and a manufacturing method therefor, an LED display panel and an LED display apparatus. The display module includes a board, a pixel unit array, an encapsulation layer and a black ink layer. The board has a front surface and a back surface. The pixel unit array is disposed on the front surface of the board. The encapsulation layer covers the region where the pixel unit array is located. A side surface of the encapsulation layer forms a slope surface at an edge of the front surface of the board. The black ink layer covers the encapsulation layer.

Abstract: A LED display module includes multiple pixel rows. A first pixel row includes a plurality of first pixel units. Each of the plurality of first pixel units includes a first sub-pixel, a second sub-pixel, and a third sub-pixel. Sub-pixels of the plurality of first pixel units form at least one first sub-pixel row. A first row of the at least one first sub-pixel row includes at least two types of the first sub-pixel, the second sub-pixel, and the third sub-pixel. A last pixel row includes multiple second pixel units. Each of the plurality of second pixel units includes a first sub-pixel, a second sub-pixel,and a third sub-pixel. Sub-pixels of the plurality of second pixel units form at least one second sub-pixel row.

Abstract: Disclosed are a light emitting diode and a method for manufacturing a light emitting diode. The light emitting diode includes a first-type layer, a light emitting layer, a second-type layer and an electrode layer; the first-type layer includes a first-type gallium nitride; the light emitting layer is located on the first-type layer; the light emitting layer includes a quantum point; the second-type layer is located on the light emitting layer; the second-type layer includes a second-type gallium nitride or an indium tin oxide; and the electrode layer is located on the second-type layer.

Abstract: Disclosed are a light emitting diode and a method for manufacturing a light emitting diode. The light emitting diode includes a first-type layer, a light emitting layer, a second-type layer and an electrode layer; the first-type layer includes a first-type gallium nitride; the light emitting layer is located on the first-type layer; the light emitting layer includes a quantum point; the second-type layer is located on the light emitting layer; the second-type layer includes a second-type gallium nitride; and the electrode layer is located on the second-type layer.

Abstract: A linear showerhead for growing GaN, including a first gas base, a second gas base, and a third gas base. First central gas passages are disposed in the middle of the first gas base. A first gap is disposed between two adjacent first central gas passages. A first nozzle is disposed at the bottom of a first central gas passage. The second gas base is disposed on the first gas base. Second central gas passages are disposed in the middle of the second gas base. A second gap is disposed between two adjacent second central gas passages. Two sides of a second central gas passage are provided with a second nozzle. The third gas base includes third central gas passages. A third central gas passage penetrates a first gap and a second gap.

Abstract: A laser lift-off integrated apparatus includes a laser light source configured to perform laser lift-off on a wafer to undergo lift-off, a lift-off chamber configured to bear the wafer to undergo lift-off, a heater configured to provide temperature required by the wafer to undergo lift-off during a lift-off process, a profile measuring device configured to acquire surface profile information of the wafer to undergo lift-off, and a movable device configured to, according to the surface profile information acquired by the profile measuring device, adjust a height of the wafer to undergo lift-off such that a focus of the laser light source is at a position where the wafer to undergo lift-off is to undergo lift-off.