Abstract: A spin-orbit torque device is described. The spin-orbit torque device comprising an interfacing layer and a magnetic layer having a switchable magnetization direction. An interface is formed between the interfacing layer and the magnetic layer, the interface having a 3m1 crystallographic point group symmetry adapted to interact with an electric current to generate a spin torque for switching the magnetization direction of the magnetic layer. A method for fabricating the spin-orbit device and a method for switching the switchable magnetization of a spin-orbit torque device are also described.

Abstract: Embodiments of the present disclosure relate to multimedia processing method, apparatus, device and medium, wherein the method includes: presenting a first multimedia interface comprising first content; receiving an interface switching request of a user in the first multimedia interface; and switching from the first multimedia interface currently presented to a second multimedia interface, and presenting second content in the second multimedia interface, wherein the first content comprises the second content and other content associated with the second content, and the second content comprises a target audio and a target subtitle corresponding to the target audio.

Abstract: A machine learning model that uses composite metrology data determines at least one parameter of a device under test using measured metrology data from the device. The composite metrology data is generated by merging measured metrology data from a reference device with synthetic metrology data calculated from a model of the reference device. The composite metrology data may be generated further based on a synthetic metrology data calculated from a model for a modified reference device. The modified reference device may be generated using variations of at least one parameter of the model to expand the parameter space of the training range.

Abstract: This disclosure discloses a multimedia processing method, apparatus, device, and medium. The method for multimedia processing includes: displaying an initial text content, wherein the initial text content corresponds to a target multimedia content; playing an associated multimedia content in response to a triggering operation for the associated multimedia content; wherein the associated multimedia content comprises a segment associated with a target text content in the target multimedia content, and the target text content is extracted from the initial text content.

Abstract: The embodiment of the present disclosure relates to a minutes processing method and apparatus, a device, and a storage medium, and the method includes: obtaining a to-be-processed text; performing minutes extraction on the to-be-processed text based on a predetermined minutes categories, and determining a minutes sentence belonging to each predetermined minutes categories; determining another sentence associated with the minutes sentence from the to-be-processed text, and storing an association relationship between each minutes sentence and the corresponding another sentence. Through the technical aspect, it is achieved that the minutes of the to-be-processed text is extracted from multiple dimensions, and compatibility of the minutes to various text forms, minutes information content and query efficiency of the to-be-processed text are improved.

Abstract: A minutes of meeting processing method, a device, and a medium. The method comprises: acquiring meeting text of a meeting audio/video; inputting the meeting text into a to-do identification model, and determining initial to-do statements; inputting the initial to-do statements into a tense determination model, and determining tense results of the initial to-do statements; and determining a meeting to-do statement in the initial to-do statements on the basis of the tense results.

Abstract: Disclosed are an interactive information processing method, an electronic device and a storage medium. The method includes establishing a position correspondence between a display text generated based on a multimedia data stream and the multimedia data stream; and presenting the display text and the multimedia data stream corresponding to the display text based on the position correspondence.

Abstract: The present disclosure provides a control circuit of a blind-mating display having two Type-C interfaces, a control device thereof, and a control method thereof. The control circuit of the blind-mating display having two Type-C interfaces includes a display control module, a first Type-C interface module, a second Type-C interface module, a first switching switch module, a second switching switch module, and a dielectric module. The dielectric module is electrically connected to the first Type-C interface module, the second Type-C interface module, and the display control module. The first switching switch module is electrically connected to the first Type-C interface module, the second Type-C interface module, and the display control module. The second switching switch module is electrically connected to the first Type-C interface module, the second Type-C interface module, and the display control module. The present disclosure is alternately communicated with the source device and the PD device.

Abstract: A spin-orbit torque device is described. The spin-orbit torque device comprising an interfacing layer and a magnetic layer having a switchable magnetization direction. An interface is formed between the interfacing layer and the magnetic layer, the interface having a 3m1 crystallographic point group symmetry adapted to interact with an electric current to generate a spin torque for switching the magnetization direction of the magnetic layer. A method for fabricating the spin-orbit device and a method for switching the switchable magnetization of a spin-orbit torque device are also described.

Abstract: In one example embodiment, a SOT-MRAM includes a storage unit having a Co?X?Pt? based free layer. The storage unit includes a bottom electrode and the Co?X?Pt? based free layer is disposed over the bottom electrode. Further, the storage unit includes a tunnel barrier layer over the Co?X?Pt? based free layer, and a fixed layer over the tunnel barrier layer. The Co?X?Pt? based free layer, tunnel barrier layer and fixed layer form a magnetic tunnel junction. The storage unit may also include a top electrode over the MTJ.

Abstract: In one embodiment, a SOT device provides current-induced perpendicular magnetization switching in a single magnetic layer, such as a L10-ordered magnetic alloy layer of FePt alloy, CoPt alloy, FePd alloy or another atomically layered magnetic alloy. The SOT may originate from the large spin orbit coupling in these alloys. Depending on the implementation, the SOT device may take the form of a SOT-MRAM, a spin memristor, a current-assisted magnetic recording media, or other type of device.

Abstract: In one example embodiment, a SOT-MRAM includes a storage unit having a Co?X?Pt? based free layer. The storage unit includes a bottom electrode and the Co?X?Pt? based free layer is disposed over the bottom electrode. Further, the storage unit includes a tunnel barrier layer over the Co?X?Pt? based free layer, and a fixed layer over the tunnel barrier layer. The Co?X?Pt? based free layer, tunnel barrier layer and fixed layer form a magnetic tunnel junction. The storage unit may also include a top electrode over the MTJ.

Abstract: Magnetic tunnel junction (MTJ) structures, spin transfer torque magnetic random access memory (STT MRAM) structures, and methods for fabricating integrated circuits including such structures are provided. In an embodiment, an MTJ structure includes a cobalt iron carbon (CoFeC) fixed reference layer. Further, the MTJ structure includes a cobalt iron carbon (CoFeC) free storage layer. Also, the MTJ structure includes a tunnel barrier layer between the fixed reference layer and the free storage layer.

Abstract: A ferroelectric tunnel junction (FTJ) structure and method of fabricating the same. The FTJ structure comprises a ferroelectric material formed on a substrate, wherein an interface between the ferroelectric material and the substrate is configured so as to achieve a desired resistance characteristic of the FTJ structure.

Abstract: Magnetic tunnel junction (MTJ) structures, spin transfer torque magnetic random access memory (STT MRAM) structures, and methods for fabricating integrated circuits including such structures are provided. In an embodiment, an MTJ structure includes a cobalt iron carbon (CoFeC) fixed reference layer. Further, the MTJ structure includes a cobalt iron carbon (CoFeC) free storage layer. Also, the MTJ structure includes a tunnel barrier layer between the fixed reference layer and the free storage layer.

Abstract: In one embodiment, a SOT device provides current-induced perpendicular magnetization switching in a single magnetic layer, such as a L10-ordered magnetic alloy layer of FePt alloy, CoPt alloy, FePd alloy or another atomically layered magnetic alloy. The SOT may originate from the large spin orbit coupling in these alloys. Depending on the implementation, the SOT device may take the form of a SOT-MRAM, a spin memristor, a current-assisted magnetic recording media, or other type of device.

Abstract: A stack includes a substrate, a magnetic recording layer having a columnar structure, and an interlayer disposed between the substrate and the magnetic recording layer. The columnar structure includes magnetic grains separated by a crystalline segregant or a combination of crystalline and amorphous segregants.

Abstract: A stack includes a substrate, a magnetic recording layer having a columnar structure, and an interlayer disposed between the substrate and the magnetic recording layer. The columnar structure includes magnetic grains separated by a crystalline segregant or a combination of crystalline and amorphous segregants.

Abstract: A magnetic stack includes a substrate, a magnetic recording layer, and a TiN—X layer disposed between the substrate and the magnetic recording layer. In the TiN—X layer, X is a dopant comprising at least one of MgO, TiO, TiO2, ZrN, ZrO, ZrO2, HfN, HfO, AlN, and Al2O3.

Abstract: A stack includes a substrate, a magnetic recording layer having a columnar structure, and an interlayer disposed between the substrate and the magnetic recording layer. The columnar structure includes magnetic grains separated by a crystalline segregant or a combination of crystalline and amorphous segregants.