Abstract: A light-emitting element and a method for manufacturing the light-emitting element are provided in the present disclosure. The light-emitting element includes: an anode layer and a cathode layer arranged opposite to each other, a light-emitting layer disposed between the anode layer and the cathode layer, a hole transport layer disposed between the light-emitting layer and the anode layer, an electron transport layer disposed between the light-emitting layer and the cathode layer, and at least one metal nanofilm layer including metal nanostructures, the metal nanofilm layer being arranged between the anode layer and the cathode layer and spaced apart from the light-emitting layer at at least one film layer.

Abstract: A quantum dots material solution is provided. The quantum dots material solution includes a quantum dots material; a ligand chelated to the quantum dots material; a fast material capable of generating, upon a first irradiation, a quencher quenching the quantum dots material; a second material capable of at least partially converting the quantum dots material in a plurality of block regions from a first form into a second form. The quantum dots material in the second form has a lower solubility in a developing solution than the quantum dots material in the first form.

Abstract: Provided are a semiconductor structure and a manufacturing method thereof. The manufacturing method for the semiconductor structure comprises: providing a substrate, wherein the substrate comprises active regions and isolation regions each located between the adjacent active regions, and each of the active regions comprises corner regions adjacent to the isolation regions; performing a doping process to implant doping ions into the corner regions, wherein the doping ions are configured to slow down an oxidation rate of the corner regions; and performing a removing process to remove the oxidized portion of the substrate after the doping process, wherein during the removing process, a side wall of each of the corner regions is exposed from a structure in the isolation region.

Abstract: A display substrate and a display substrate are provided. The display substrate includes a first signal line, and the first signal line includes a first signal line portion in the display region and a second signal line portion in the peripheral region. The second signal line portion of the first signal line includes a first sub-portion, a second sub-portion and a third sub-portion which are sequentially connected; the first sub-portion and the third sub-portion both include a curved structure, and the second sub-portion is in a linear structure; and the display substrate further includes a first compensation electrode in the peripheral region, and the first compensation electrode is overlapped with the second sub-portion of the second signal line portion of the first signal line in a direction perpendicular to the base substrate to form a compensation capacitor.

Abstract: Embodiments of the present disclosure provide a method for manufacturing a semiconductor structure and a semiconductor structure. The manufacturing method includes: providing a substrate, and forming bit lines extending in a first direction and trenches between the adjacent bit lines on the substrate; forming a dielectric layer and a contact layer filling the trenches, parts of the dielectric layer and parts of the contact layer being arranged at intervals in the first direction, both the dielectric layer and the contact layer being in contact with the substrate, and the contact layer having first gaps; removing part of the contact layer, to expose the first gaps; forming a filling layer to fill the first gaps; and etching the contact layer and the filling layer back.

Abstract: A composite includes a plastic substrate and an electrical insulator layer formed on the plastic substrate. The electrical insulator layer contains boron nitride nanotubes (BNNTs), which may be unmodified or modified BNNTS. The composite is suitable for use in making printed electronic devices. A process includes providing a plastic substrate and forming on at least a portion of a surface of the plastic substrate a layer that contains the BNNTs. A metallic ink trace is formed on a portion of the layer, such that the metallic ink trace is spaced-apart from the substrate. Using photonic or thermal sintering techniques, the metallic ink trace is then sintered.

Abstract: Disclosed is recombinant Escherichia coli for producing L-tyrosine and application thereof, and belongs to the technical fields of genetic engineering and bioengineering. According to the present disclosure, genes aroP and tyrP are knocked out, expresses the endogenous gene yddG of E. coli, then heterologously expresses fpk from Bifidobacterium adolescentis, expresses the endogenous genes ppsA and tktA of E. coli, and then expresses aroGfbr and tyrAfbr. Knocking out tyrR, trpE and pheA, so that the synthesis flux of L-tyrosine is increased. Finally, an endogenous gene poxB is knocked out to realize stable fermentation performance at high glucose concentration.

Abstract: A method for forming a silicon dioxide film and a method for forming a metal gate are provided. The method for forming a silicon dioxide film includes: forming a silicon dioxide layer on a semiconductor substrate, performing a nitrogen treatment to the silicon dioxide layer to convert the silicon dioxide layer of partial thickness into a mixed layer of silicon nitride and silicon oxynitride; and removing the mixed layer to form a silicon dioxide film on the semiconductor substrate.

Abstract: The present disclosure provides an antenna and a communication device, the antenna includes a dielectric substrate, a first radiating element, a second radiating element and a switching element, the second radiating element surrounds the first radiating element, the second radiating element is of an open-loop structure, at least one first groove is provided in the first radiating element, each switching element corresponds to one first groove, the switching element includes a membrane bridge and a signal electrode, the signal electrode is arranged on the dielectric substrate, coupled to the second radiating element, and insulated from the first radiating element, the membrane bridge is arranged on a side of the first radiating element away from the dielectric substrate, each membrane bridge crosses over one first groove, and at least part of the signal electrode is located in a space defined by the membrane bridge and the first groove.

Abstract: A displaying base plate and a displaying device, the displaying base plate includes a first sub-pixel unit and a second sub-pixel unit that are arranged adjacently, a substrate, and a first metal layer, a first insulating layer and a second metal layer that are arranged in stack on one side of the substrate. The first metal layer includes a first electrode block connected to a constant potential. The second metal layer includes signal lines and connecting lines; the signal lines include a first signal line and a second signal line; the connecting lines include a first connecting line and a second connecting line; the first signal line is connected to a driving circuit of the first sub-pixel unit, the second signal line is connected to a driving circuit of the second sub-pixel unit.

Abstract: Described herein is a spur-free technique for a switching regulator. The switching regulator may self-adaptively reduce the spur of the output voltage without affecting performance of the switching frequency, The switching regulator may track a coil current and may use an active feedback loop to adaptively generate an artificial coil current, which tracks an amplitude of the coil current but having opposite phase. The artificial coil current may then be injected into an output node to cancel the coil current ripple.

Abstract: The present disclosure provides a quantum dot light emitting diode, including: a first electrode, a second electrode, a quantum dot light emitting layer between the first electrode and the second electrode, at least one electron transport layer between the quantum dot light emitting layer and the first electrode, and an electron contribution layer between the electron transport layer of the at least one electron transport layer closest to the first electrode and the quantum dot light emitting layer; a material of the electron contribution layer includes a metal material. The embodiment of the present disclosure also provides a method for manufacturing the quantum dot light emitting diode and a display panel.

Abstract: The present invention belongs to the medical field, and relates to novel ?-lactamase inhibitors, for the treatment of bacterial infections in combination with ?-lactam antibiotics, including infection caused by drug resistant organisms and especially multi-drug resistant organisms. The present invention includes compounds according to formula (I): or pharmaceutically acceptable salts thereof, wherein M and R are as defined herein.

Abstract: A display substrate and a display apparatus are provided, and the display substrate includes a pixel circuit with a light emitting module configured to emit light; a driving module configured to drive the light emitting module to emit light based on a driving voltage in a luminescence stage; a storage module configured to maintain and provide the driving voltage to the driving module in the luminescence stage; a first transistor, having a first electrode coupled to a position from which the driving module acquires the driving voltage; a second transistor, having a first electrode coupled to the first electrode of the first transistor, and a second electrode being not directly coupled to a signal source; and a voltage stabilizing capacitor, having a first electrode coupled to the second electrode of the second transistor, and a second electrode coupled to a constant voltage signal source.

Abstract: A method for generating magnetic resonance (MR) images of a kidney region or a brain of a subject using multinuclear magnetic resonance imaging MRI includes performing, using an MRI system, an Na-nuclei pulse sequence module to acquire a portion of a first set of MR data from the kidney or brain region of the subject and performing, using the MRI system, an H-nuclei pulse sequence module to acquire a portion of a second set of MR data from the kidney or brain region of the subject. The Na-nuclei pulse sequence module and the H-nuclei pulse sequence module may be repeated in an interleaved manner until acquisition of the first set of MR data and the second set of MR data are complete. The method further includes generating at least one Na-based image using the first set of MR data, generating at least one H-based image using the second set of MR data and displaying one or more of the at least one Na-based image and the at least one H-based image on a display.

Abstract: The present disclosure provides a P450 cytochrome enzyme for andrographolide synthesis and its application, belonging to the field of bioengineering. The present disclosure uses Saccharomyces cerevisiae CEN.PK2-1D as a host, and implements knockout of ROX1 and GAL80 genes on the genome, and integrative expression of GGPP synthase encoding gene and CPS diterpene synthase encoding gene at ROX1 site; and implements free expression of ApCPR and CYP71A8 and CYP71D10 both with truncated signal peptides, successfully constructing recombinant S. cerevisiae, and achieving de novo synthesis of 3,15,19-Trihydroxy-8(17),13-ent-labdadiene-16-oic acid. Compared with the blank, a response value of a product peak reaches 1.9*106, and this strategy provides necessary reference for analyzing biosynthetic pathway of andrographolide and using metabolic engineering to synthesize andrographolide and related derivatives thereof.

Abstract: A method for preparing a semiconductor device includes: providing a semiconductor substrate, in which a trench is formed on the semiconductor substrate, a filling layer is formed in the trench, and a void is formed in the filling layer; removing a portion of the filling layer to expose the void; forming a plug, in which the plug is configured to plug the void and extends into the void by at least a preset distance; and removing a portion of the filling layer and remaining the plug with at least a preset height until the filling layer reaches a preset thickness to form a contact hole.

Abstract: The present disclosure discloses a recombinant Escherichia coli for producing rosmarinic acid and application thereof, belonging to the technical fields of genetic engineering and bioengineering. In the present disclosure, FjTA derived from Flavobacterium johnsoniae, endogenous hpaBC derived from E. coli, CbRAS derived from Coleus blumei, HPPR derived from Coleus scutellarioides, and Pc4CL1 derived from Petroselinum crispum are heterologously expressed in E. coli, realizing synthesis of rosmarinic acid. TcTAL derived from Trichosporon cutaneum and tyrC for removing feedback inhibition are introduced, further increasing synthesis throughput of caffeic acid, and PmLAAD derived from Proteus myxofaciens is heterologously expressed, realizing redistribution of L-DOPA. An endogenous gene menl is knocked out, improving the content and stability of a rosmarinic acid precursor. The recombinant strain constructed in the present disclosure can produce rosmarinic acid by fermentation at a yield of up to 511.

Abstract: Disclosed are a quantum dot light emitting diode and a manufacturing method therefor, a display panel and a display device, which belong to the field of display technology. The quantum dot light emitting diode comprises: an anode layer (2), a hole injection layer (3), a hole transport layer (4) and a quantum dot layer (5) which are provided in a stacked manner, a film material of the hole transport layer (4) comprising a mixture of nickel oxide and a target metal oxide, and the target metal oxide comprising at least one metal oxide other than the nickel oxide. The surface/bulk defects on the hole transport layer are passivated by doping the nickel oxide with the target metal oxide.