Abstract: A blue top emitting quantum dot light-emitting device and a display apparatus are disclosed. The blue top emitting quantum dot light-emitting device includes: a cathode and an anode oppositely arranged, a blue quantum dot light-emitting layer between the cathode and the anode, an electron transport layer between the cathode and the blue quantum dot light-emitting layer, and a hole transport layer between the blue quantum dot light-emitting layer and the anode; where: a material of the blue quantum dot light-emitting layer is ZnSe1-x:Tex/ZnSe/ZnS, ZnSe1-x:Tex means that a molar ratio of Se to Te is 1-x:x, and x is 0.03 to 0.07; a thickness of the hole transport layer is 10 nm to 35 nm, a thickness of the electron transport layer is 25 nm to 50 nm, and a sum of thicknesses of the hole transport layer and the electron transport layer is 55 nm to 65 nm.

Abstract: The present invention provides QLED devices, hole transport materials and producing methods thereof, and display devices. A hole transport material includes a polymer, wherein the polymer is a single nanoparticle including at least a first metal compound and a second metal compound, the first metal compound and the second metal compound are linked via a covalent bond or a Van der Waals force, and valence band energy levels of the first metal compound and the second metal compound are different.

Abstract: The present disclosure provides a quantum dot light emitting diode, includes a first electrode, a second electrode and a quantum dot light emitting layer between the first electrode and the second electrode, where one of the first electrode and the second electrode is a reflective electrode, and the other is a transmissive electrode or a transflective electrode; at least one optical adjustment layer is arranged between the first electrode and the second electrode, each optical adjustment layer forms a microcavity structure with the reflective electrode, and light extraction efficiency P of the quantum dot light emitting diode satisfies 25%?P?98%. An embodiment of the present disclosure further provides a method of manufacturing a quantum dot light emitting diode and a display panel.

Abstract: A quantum dot film includes a target color quantum dot film and a residual non-target color quantum dot film, wherein a ligand for the target color quantum dot of the target color quantum dot film is an oil-soluble ligand, and a ligand for the residual non-target color quantum dot of the residual non-target color quantum dot film is selected from any one or more of halogen ions and short-chain organic ligands whose carbon chain length is in a range of 2 to 18 carbons.

Abstract: The present disclosure provides a quantum dot light-emitting device, a preparing method and a display device. The quantum dot light-emitting device includes an anode, a hole transport layer, a quantum dot light-emitting layer, an electron transport layer and a cathode laminated one on another. The quantum dot light-emitting layer includes heterodimer quantum dots, the heterodimer quantum dots include first quantum dots carrying a positive charge and second quantum dots carrying a negative charge, and each first quantum dot and each second quantum dot have a same energy gap and different positions of conduction band and valence band.

Abstract: A light-emitting substrate includes a plurality of light-emitting devices including at least one first light-emitting device and at least one second light-emitting device. A first light-emitting device in the at least one first light-emitting device includes a first color light-emitting layer. A second light-emitting device in the at least one second light-emitting device includes another first color light-emitting layer, and a first material layer and a second color light-emitting layer that are sequentially stacked on the another first color light-emitting layer.

Abstract: The present disclosure provides a quantum dot light emitting diode, including: a first electrode, a second electrode, a quantum dot light emitting layer between the first electrode and the second electrode, at least one electron transport layer between the quantum dot light emitting layer and the first electrode, and an electron contribution layer between the electron transport layer of the at least one electron transport layer closest to the first electrode and the quantum dot light emitting layer; a material of the electron contribution layer includes a metal material. The embodiment of the present disclosure also provides a method for manufacturing the quantum dot light emitting diode and a display panel.

Abstract: The present application provides a quantum dot film layer, a quantum dot light emitting device and a manufacturing method therefor to improve the balance of carriers. The quantum dot film layer includes a first quantum dot layer and a second quantum dot layer. The first quantum dot layer includes first quantum dots, and first photosensitive ligands connected with surfaces of the first quantum dots. The second quantum dot layer includes second quantum dots, and second non-photosensitive ligands connected with surfaces of the second quantum dots. The second quantum dots are the same as the first quantum dots.

Abstract: A light-emitting element and a method for manufacturing the light-emitting element are provided in the present disclosure. The light-emitting element includes: an anode layer and a cathode layer arranged opposite to each other, a light-emitting layer disposed between the anode layer and the cathode layer, a hole transport layer disposed between the light-emitting layer and the anode layer, an electron transport layer disposed between the light-emitting layer and the cathode layer, and at least one metal nanofilm layer including metal nanostructures, the metal nanofilm layer being arranged between the anode layer and the cathode layer and spaced apart from the light-emitting layer at at least one film layer.

Abstract: A quantum dots material solution is provided. The quantum dots material solution includes a quantum dots material; a ligand chelated to the quantum dots material; a fast material capable of generating, upon a first irradiation, a quencher quenching the quantum dots material; a second material capable of at least partially converting the quantum dots material in a plurality of block regions from a first form into a second form. The quantum dots material in the second form has a lower solubility in a developing solution than the quantum dots material in the first form.

Abstract: The present disclosure provides a quantum dot light emitting diode, including: a first electrode, a second electrode, a quantum dot light emitting layer between the first electrode and the second electrode, at least one electron transport layer between the quantum dot light emitting layer and the first electrode, and an electron contribution layer between the electron transport layer of the at least one electron transport layer closest to the first electrode and the quantum dot light emitting layer; a material of the electron contribution layer includes a metal material. The embodiment of the present disclosure also provides a method for manufacturing the quantum dot light emitting diode and a display panel.

Abstract: Disclosed are a quantum dot light emitting diode and a manufacturing method therefor, a display panel and a display device, which belong to the field of display technology. The quantum dot light emitting diode comprises: an anode layer (2), a hole injection layer (3), a hole transport layer (4) and a quantum dot layer (5) which are provided in a stacked manner, a film material of the hole transport layer (4) comprising a mixture of nickel oxide and a target metal oxide, and the target metal oxide comprising at least one metal oxide other than the nickel oxide. The surface/bulk defects on the hole transport layer are passivated by doping the nickel oxide with the target metal oxide.

Abstract: The disclosure provides a quantum dot structure, a manufacturing method thereof, and a quantum dot light-emitting device. The quantum dot structure includes a core structure and a shell layer. The core structure includes a first metal element, at least one second metal element, and a non-metal element that bind through a chemical bond. The first metal element is a group III element, the non-metal element is a group V element, and the second metal element is a metal element different from the first metal element. In an inside-to-outside direction of the core structure, the content of the first metal element is in a descending order, the sum of content of the second metal element is in an ascending order, and the size of an optical band gap of the core structure is in the ascending order.

Abstract: Disclosed are a quantum dot and a preparation method therefor, a quantum dot light-emitting device, and a display apparatus. The quantum dot includes a core structure and a shell structure that surrounds the core structure, wherein the material of the outermost shell in the shell structure includes an electron transport material and a hole transport material.

Abstract: Provided are a quantum dot light-emitting device, a display apparatus and a manufacturing method The quantum dot light-emitting device includes: a light-emitting layer group of a first and second quantum dot light-emitting layers arranged in a laminated manner, the chain length of a first ligand is greater than that of a second ligand, the difference between two chain lengths is greater than a first preset value; the difference between the number of carriers arriving at the light-emitting layer group from a first electrode layer and the number of carriers arriving at the light-emitting layer group from a second electrode layer is greater than a second preset value; the side of the light-emitting layer group with the largest number of entering carriers is used as a multi-carrier entry side; the first quantum dot light-emitting layer is on the surface of the second quantum dot light-emitting layer facing the multi-carrier entry side.

Abstract: The disclosure provides a quantum dot structure, a manufacturing method thereof, and a quantum dot light-emitting device. The quantum dot structure includes a core structure and a shell layer. The core structure includes a first metal element, at least one second metal element, and a non-metal element that bind through a chemical bond. The first metal element is a group III element, the non-metal element is a group V element, and the second metal element is a metal element different from the first metal element. In an inside-to-outside direction of the core structure, the content of the first metal element is in a descending order, the sum of content of the second metal element is in an ascending order, and the size of an optical band gap of the core structure is in the ascending order.

Abstract: The disclosure provides a quantum dot structure, a manufacturing method thereof, and a quantum dot light-emitting device. The quantum dot structure includes a core structure and a shell layer. The core structure includes a first metal element, at least one second metal element, and a non-metal element that bind through a chemical bond. The first metal element is a group III element, the non-metal element is a group V element, and the second metal element is a metal element different from the first metal element. In an inside-to-outside direction of the core structure, the content of the first metal element is in a descending order, the sum of content of the second metal element is in an ascending order, and the size of an optical band gap of the core structure is in the ascending order.

Abstract: Disclosed are a light emitting device, a display device and a manufacturing method of the light emitting device. The light emitting device includes a base substrate, a first electrode located on one side of the base substrate, a light emitting layer located on a side, away from the base substrate, of the first electrode, and a second electrode located on a side, away from the first electrode, of the light emitting layer, wherein a least one light adjusting layer is arranged between the first electrode and the second electrode, the light adjusting layer generates carriers when irradiated by light emitted by the light emitting layer, and the carriers enter the light emitting layer under the action of an electric field generated by the first electrode and the second electrode.

Abstract: The present disclosure provides a quantum dot light emitting diode, including: a first electrode, a second electrode, a quantum dot light emitting layer between the first electrode and the second electrode, at least one electron transport layer between the quantum dot light emitting layer and the first electrode, and an electron contribution layer between the electron transport layer of the at least one electron transport layer closest to the first electrode and the quantum dot light emitting layer; a material of the electron contribution layer includes a metal material. The embodiment of the present disclosure also provides a method for manufacturing the quantum dot light emitting diode and a display panel.

Abstract: The present invention provides QLED devices, hole transport materials and producing methods thereof, and display devices. A hole transport material includes a polymer, wherein the polymer is a single nanoparticle including at least a first metal compound and a second metal compound, the first metal compound and the second metal compound are linked via a covalent bond or a Van der Waals force, and valence band energy levels of the first metal compound and the second metal compound are different.