Abstract: A semiconductor device includes a substrate having an opening extending through the substrate and at least one support member on a sidewall of the opening, a vibration membrane on the substrate, a cover layer on the vibration membrane. The substrate, the vibration membrane, and the cover layer define a cavity. The opening exposes a lower surface portion of the vibration membrane. The at least one support member on the sidewall of the opening provides support to the vibration membrane in a deformation of the vibration membrane to prevent breakage.

Abstract: A semiconductor device includes a substrate having an opening extending through the substrate and at least one support member on a sidewall of the opening, a vibration membrane on the substrate, a cover layer on the vibration membrane. The substrate, the vibration membrane, and the cover layer define a cavity. The opening exposes a lower surface portion of the vibration membrane. The at least one support member on the sidewall of the opening provides support to the vibration membrane in a deformation of the vibration membrane to prevent breakage.

Abstract: Semiconductor structure and fabrication methods are provided. The semiconductor structure includes a first wafer having a first metal layer therein and having a first material layer thereon, and a second wafer having a second metal layer therein and having a second material layer thereon. An alignment process and a bonding process are preformed between the first wafer and the second wafer, such that the first material layer and the second material layer are aligned and in contact with one another to provide a first alignment accuracy between the first metal layer and second metal layer. A heating process is performed on the first material layer and the second material layer to melt the first material layer and the second material layer to provide a second alignment accuracy between the first metal layer and second metal layer. The second alignment accuracy is greater than the first alignment accuracy.

Abstract: A method for forming a semiconductor structure is provided. The method includes providing a substrate having a device region; and forming a sacrificial layer on a surface of the substrate in the device region. The method also includes forming a device layer having a plurality of openings exposing a portion of the surface of the sacrificial layer on the sacrificial layer; and removing the sacrificial layer to expose the surface of the substrate in the device region. Further, the method includes forming a cavity in the substrate in the device region by simultaneously etching the surface of the substrate in the device region exposed by the removed sacrificial layer and the plurality of openings using an anisotropic etching process.

Abstract: Semiconductor structure and fabrication methods are provided. The semiconductor structure includes a first wafer having a first metal layer therein and having a first material layer thereon, and a second wafer having a second metal layer therein and having a second material layer thereon. An alignment process and a bonding process are preformed between the first wafer and the second wafer, such that the first material layer and the second material layer are aligned and in contact with one another to provide a first alignment accuracy between the first metal layer and second metal layer. A heating process is performed on the first material layer and the second material layer to melt the first material layer and the second material layer to provide a second alignment accuracy between the first metal layer and second metal layer. The second alignment accuracy is greater than the first alignment accuracy.

Abstract: A method for forming a semiconductor structure is provided. The method includes providing a substrate having a device region; and forming a sacrificial layer on a surface of the substrate in the device region. The method also includes forming a device layer having a plurality of openings exposing a portion of the surface of the sacrificial layer on the sacrificial layer; and removing the sacrificial layer to expose the surface of the substrate in the device region. Further, the method includes forming a cavity in the substrate in the device region by simultaneously etching the surface of the substrate in the device region exposed by the removed sacrificial layer and the plurality of openings using an anisotropic etching process.