Abstract: Provided are a Bacillus coagulans strain VHProbi C08 having a blood glucose reduction efficacy and an application thereof in preparation of a hypoglycemic product. The accession number of the strain is CCTCCM 2019738. Further provided is a hypoglycemic product comprising the Bacillus coagulans VHProbi C08 and/or the fermentation product of Bacillus coagulans VHProbi C08. A carbon source used in the culture medium of the strain is any one or more of fructooligosaccharide, galactooligosaccharides, and inulin.

Abstract: Disclosed is an unmanned food delivery device in a cabin. The device comprises a first conveying mechanism, a second conveying mechanism and a loading and unloading mechanism. The first conveying mechanism comprises a universal conveyor belt, and the universal conveyor belt is driven by universal wheels to convey lunch boxes, and the universal conveyor belt is used for conveying lunch boxes in a kitchen area and a passenger area in a reciprocating manner; multiple second conveying mechanisms are respectively arranged on a luggage rack bottom plate in the passenger area, the luggage rack bottom plate is provided with multiple feeding openings respectively corresponding to seats at intervals, each second conveying mechanism is respectively positioned at the feeding openings, the second conveying mechanisms are connected with the first conveying mechanism and used for conveying lunch boxes by the first conveying mechanism to the seats.

Abstract: Subject matter disclosed herein may relate to fabrication of a correlated electron material (CEM) switch. In particular embodiments, an insulative material may be formed on or over a sidewall portion of a conductive contact region. The insulative material may insulate the conductive contact region from resputtered CEM occurring during a physical etch of a CEM film.

Abstract: Subject matter disclosed herein may relate to fabrication of a correlated electron material (CEM) switch. In particular embodiments a method may include forming a structure on a first portion of a substrate while maintaining a second portion of the substrate exposed. A sealing layer may be deposited over the structure and over at least a portion of the exposed second portion of the substrate. A conductive via may be formed by way of a dry etch through the sealing layer to contact the exposed metal layer. In embodiments, an etch-stop control layer may be utilized to control an etching process prior to formation of metal contacts over the CEM switch and the conductive via.

Abstract: Subject matter disclosed herein may relate to fabrication of a correlated electron material (CEM) switch. In particular embodiments a method may include forming a structure on a first portion of a substrate while maintaining a second portion of the substrate exposed. A sealing layer may be deposited over the structure and over at least a portion of the exposed second portion of the substrate. A conductive via may be formed by way of a dry etch through the sealing layer to contact the exposed metal layer. In embodiments, an etch-stop control layer may be utilized to control an etching process prior to formation of metal contacts over the CEM switch and the conductive via.

Abstract: Subject matter disclosed herein may relate to fabrication of a correlated electron material (CEM) switch. In particular embodiments a method may include forming a structure on a first portion of a substrate while maintaining a second portion of the substrate exposed. A sealing layer may be deposited over the structure and over at least a portion of the exposed second portion of the substrate. A conductive via may be formed by way of a dry etch through the sealing layer to contact the exposed metal layer. In embodiments, an etch-stop control layer may be utilized to control an etching process prior to formation of metal contacts over the CEM switch and the conductive via.

Abstract: Subject matter disclosed herein may relate to fabrication of a correlated electron material (CEM) switch. In particular embodiments, an insulative material may be formed on or over a sidewall portion of a conductive contact region. The insulative material may insulate the conductive contact region from resputtered CEM occurring during a physical etch of a CEM film.

Abstract: Methods of cleaning substrates and growing epitaxial silicon thereon are provided. Wafers are exposed to a plasma for a sufficient time prior to epitaxial silicon growth, in order to clean the wafers. The methods exhibit enhanced selectivity and reduced lateral growth of epitaxial silicon. The wafers may have dielectric areas that are passivated by the exposure of the wafer to a plasma.

Abstract: A reversible resistance-switching metal-insulator-metal (MIM) stack is provided which can be set to a low resistance state with a first polarity signal and reset to a higher resistance state with a second polarity signal. The first polarity signal is opposite in polarity than the second polarity signal. In one approach, the MIM stack includes a carbon-based reversible resistivity switching material such as a carbon nanotube material. The MIM stack can further include one or more additional reversible resistivity switching materials such as metal oxide above and/or below the carbon-based reversible resistivity switching material. In another approach, a metal oxide layer is between separate layers of carbon-based reversible resistivity switching material.

Abstract: In some aspects, a method of fabricating a memory cell is provided that includes fabricating a steering element above a substrate, and fabricating a reversible-resistance switching element coupled to the steering element by selectively fabricating carbon nano-tube (“CNT”) material above the substrate, wherein the CNT material comprises a single CNT. Numerous other aspects are provided.

Abstract: A reversible resistance-switching metal-insulator-metal (MIM) stack is provided which can be set to a low resistance state with a first polarity signal and reset to a higher resistance state with a second polarity signal. The first polarity signal is opposite in polarity than the second polarity signal. In one approach, the MIM stack includes a carbon-based reversible resistivity switching material such as a carbon nanotube material. The MIM stack can further include one or more additional reversible resistivity switching materials such as metal oxide above and/or below the carbon-based reversible resistivity switching material. In another approach, a metal oxide layer is between separate layers of carbon-based reversible resistivity switching material.

Abstract: A reversible resistance-switching metal-insulator-metal (MIM) stack is provided which can be set to a low resistance state with a first polarity signal and reset to a higher resistance state with a second polarity signal. The first polarity signal is opposite in polarity than the second polarity signal. In one approach, the MIM stack includes a carbon-based reversible resistivity switching material such as a carbon nanotube material. The MIM stack can further include one or more additional reversible resistivity switching materials such as metal oxide above and/or below the carbon-based reversible resistivity switching material. In another approach, a metal oxide layer is between separate layers of carbon-based reversible resistivity switching material.

Abstract: A method of forming a reversible resistance-switching metal-insulator-metal structure is provided, the method including forming a first non-metallic conducting layer, forming a non-conducting layer above the first non-metallic conducting layer, forming a second non-metallic conducting layer above the non-conducting layer, etching the first non-metallic conducting layer, non-conducting layer and second non-metallic conducting layer to form a pillar, and disposing a carbon material layer about a sidewall of the pillar. Other aspects are also provided.

Abstract: A method of programming a nonvolatile memory cell. The nonvolatile memory cell includes a diode steering element in series with a carbon storage element The method includes providing a first voltage to the nonvolatile memory cell. The first voltage reverse biases the diode steering element. The carbon storage element sets to a lower resistivity state.

Abstract: A memory device in a 3-D read and write memory includes memory cells. Each memory cell includes a resistance-switching memory element (RSME) in series with a steering element. The RSME has first and second resistance-switching layers on either side of a conductive intermediate layer, and first and second electrodes at either end of the RSME. The first and second resistance-switching layers can both have a bipolar or unipolar switching characteristic. In a set or reset operation of the memory cell, an ionic current flows in the resistance-switching layers, contributing to a switching mechanism. An electron flow, which does not contribute to the switching mechanism, is reduced due to scattering by the conductive intermediate layer, to avoid damage to the steering element. Particular materials and combinations of materials for the different layers of the RSME are provided.

Abstract: In a first aspect, a method of forming a metal-insulator-metal (“MIM”) stack is provided, the method including: (1) forming a dielectric material having an opening and a first conductive carbon layer within the opening; (2) forming a spacer in the opening; (3) forming a carbon-based switching material on a sidewall of the spacer; and (4) forming a second conductive carbon layer above the carbon-based switching material. A ratio of a cross sectional area of the opening in the dielectric material to a cross sectional area of the carbon-based switching material on the sidewall of the spacer is at least 5. Numerous other aspects are provided.

Abstract: A reversible resistance-switching metal-insulator-metal (MIM) stack is provided which can be set to a low resistance state with a first polarity signal and reset to a higher resistance state with a second polarity signal. The first polarity signal is opposite in polarity than the second polarity signal. In one approach, the MIM stack includes a carbon-based reversible resistivity switching material such as a carbon nanotube material. The MIM stack can further include one or more additional reversible resistivity switching materials such as metal oxide above and/or below the carbon-based reversible resistivity switching material. In another approach, a metal oxide layer is between separate layers of carbon-based reversible resistivity switching material.

Abstract: In a first aspect, a method of forming a memory cell is provided that includes (1) forming a metal-insulator-metal (MIM) stack, the MIM stack including (a) a first conductive carbon layer; (b) a low-hydrogen, silicon-containing carbon layer above the first conductive carbon layer; and (c) a second conductive carbon layer above the low-hydrogen, silicon-containing carbon layer; and (2) forming a steering element coupled to the MIM stack. Numerous other aspects are provided.

Abstract: Methods of cleaning substrates and growing epitaxial silicon thereon are provided. Wafers are exposed to a plasma for a sufficient time prior to epitaxial silicon growth, in order to clean the wafers. The methods exhibit enhanced selectivity and reduced lateral growth of epitaxial silicon. The wafers may have dielectric areas that are passivated by the exposure of the wafer to a plasma.

Abstract: Methods of cleaning substrates and growing epitaxial silicon thereon are provided. Wafers are exposed to a plasma for a sufficient time prior to epitaxial silicon growth, in order to clean the wafers. The methods exhibit enhanced selectivity and reduced lateral growth of epitaxial silicon. The wafers may have dielectric areas that are passivated by the exposure of the wafer to a plasma.