Abstract: A method for preparing a silicon carbide heterojunction normally-off high-electron-mobility transistor includes selecting an unintentionally doped n-type 4H-SiC chip as a substrate; growing a 4H-SiC transition layer on the substrate through isomorphic epitaxial growth, and growing a C face on the 4H-SiC transition layer through epitaxial growth; growing an unintentionally doped 3C-SiC potential well layer on the C face; growing an n-type doped 4H-SiC barrier layer on the 3C-SiC potential well layer, and growing a Si face on the 4H-SiC barrier layer through epitaxial growth; growing an unintentionally doped 3C-SiC cap layer on the Si face; and producing electrodes and protective films, so as to obtain a 3C-SiC/4H-SiC heterojunction normally-off single-channel high-electron-mobility transistor. The method allows both sides of the SiC heterojunction interface to have homogeneous elements during preparation, thereby eliminating diffusive contamination and reducing process complexity.

Abstract: A method for preparing a silicon carbide heterojunction normally-off high-electron-mobility transistor includes selecting an unintentionally doped n-type 4H-SiC chip as a substrate; growing a 4H—SiC transition layer on the substrate through isomorphic epitaxial growth, and growing a C face on the 4H—SiC transition layer through epitaxial growth; growing an unintentionally doped 3C—SiC potential well layer on the C face of the 4H—SiC transition layer; growing an n-type doped 4H—SiC barrier layer on the 3C—SiC potential well layer, and growing a Si face on the 4H—SiC barrier layer through epitaxial growth; growing an unintentionally doped 3C—SiC cap layer on the Si face of the 4H—SiC barrier layer; and producing electrodes and protective films, so as to obtain a 3C—SiC/4H—SiC heterojunction normally-off single-channel high-electron-mobility transistor.