Patents by Inventor Jing-Yang LI

Jing-Yang LI has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11956788
    Abstract: Methods, systems, and devices for wireless communications are described. A transmitting device may transmit an expiration indication to a receiving device as part of a scheduling message for a transport block. The expiration indication may provide information related to an expiration time for the transport block. If the expiration time is reached prior to successful reception by a receiving device, the receiving device may assume that the transport block has expired and may refrain from transmitting a retransmission grant, or may empty a hybrid automatic repeat request (HARM) buffer associated with the transport block. If the transmitting device fails to successfully receive an indication from the receiving device of a successful reception of the transport block prior to the expiration period, the transmitting device may also assume that the transport block has expired.
    Type: Grant
    Filed: July 11, 2019
    Date of Patent: April 9, 2024
    Assignee: QUALCOMM Incorporated
    Inventors: Wei Yang, Jing Jiang, Wanshi Chen, Peter Gaal, Tingfang Ji, Chih-Ping Li, Seyedkianoush Hosseini
  • Patent number: 11950273
    Abstract: Methods, systems, and devices for wireless communication are described. In one example, a base station may dynamically configure a user equipment (UE) to monitor or avoid monitoring for a preemption indication. Accordingly, the UE may have a lower chance of monitoring for a preemption indication when it is unlikely that an uplink or downlink transmission will be preempted. In another example, a base station may transmit a control message indicating whether future indications received from the base station are to be interpreted as preemption indications or permission indications. Accordingly, the base station may choose to use either preemption indications or permission indications (e.g., based on the probability of collisions between mobile broadband (MBB) and low latency transmissions) to facilitate MBB and low latency communication multiplexing with limited signaling.
    Type: Grant
    Filed: February 27, 2023
    Date of Patent: April 2, 2024
    Assignee: QUALCOMM Incorporated
    Inventors: Wei Yang, Jing Jiang, Chih-Ping Li, Seyedkianoush Hosseini, Heechoon Lee
  • Patent number: 11911737
    Abstract: Provided herein is a method of preparing a ceramic material, the method including: providing a ceramic gel including a plurality of metal salts and compressing the ceramic gel thereby inducing stress-induced mineralization of the ceramic gel and formation of the ceramic material, wherein the ceramic gel exists in isolated form.
    Type: Grant
    Filed: November 15, 2021
    Date of Patent: February 27, 2024
    Assignee: City University of Hong Kong
    Inventors: Jian Lu, Yang Yang Li, Guobin Zhang, Jing Zhong, Peng Du, Zhengtao Xu
  • Patent number: 9859113
    Abstract: A semiconductor device structure is provided. The semiconductor device structure includes a semiconductor substrate. The semiconductor device structure includes a gate stack over the semiconductor substrate. The semiconductor device structure includes spacers over opposite sidewalls of the gate stack. The spacers and the gate stack surround a recess over the gate stack. The semiconductor device structure includes a first insulating layer over the gate stack and an inner wall of the recess. The semiconductor device structure includes a second insulating layer over the first insulating layer. Materials of the first insulating layer and the second insulating layer are different, and a first thickness of the first insulating layer is less than a second thickness of the second insulating layer.
    Type: Grant
    Filed: April 17, 2015
    Date of Patent: January 2, 2018
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Jing-Yang Li, Chun-Sheng Wu, Ding-I Liu, Yi-Fang Li
  • Publication number: 20160307758
    Abstract: A semiconductor device structure is provided. The semiconductor device structure includes a semiconductor substrate. The semiconductor device structure includes a gate stack over the semiconductor substrate. The semiconductor device structure includes spacers over opposite sidewalls of the gate stack. The spacers and the gate stack surround a recess over the gate stack. The semiconductor device structure includes a first insulating layer over the gate stack and an inner wall of the recess. The semiconductor device structure includes a second insulating layer over the first insulating layer. Materials of the first insulating layer and the second insulating layer are different, and a first thickness of the first insulating layer is less than a second thickness of the second insulating layer.
    Type: Application
    Filed: April 17, 2015
    Publication date: October 20, 2016
    Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Jing-Yang LI, Chun-Sheng WU, Ding-I LIU, Yi-Fang LI