Abstract: A process and solution for selectively wet etching a titanium based perovskite material disposed on a silicon oxide or silicon nitride substrate is disclosed herein. The solution is composed of hydrogen peroxide, an acid and deionized water. The solution is heated to a temperature between 25 and 90 degrees Celsius. The titanium based perovskite material may be barium strontium titanate, barium titanate, strontium titanate or a lead titanate. The solution selectively etches the perovskite material while the substrate is only minimally etched, if at all. The process and solution allows for an etching rate up to thirty times greater than conventional etching rates for similar perovskite materials selective to various substrate, barrier and mask layers, including SiO2.

Abstract: A process and solution for selectively wet etching a titanium based perovskite material disposed on a silicon oxide or silicon nitride substrate is disclosed herein. The solution is composed of hydrogen peroxide, an acid and deionized water. The solution is heated to a temperature between 25 and 90 degrees Celsius. The titanium based perovskite material may be barium strontium titanate, barium titanate, strontium titanate or a lead titanate. The solution selectively etches the perovskite material while the substrate is only minimally etched, if at all. The process and solution allows for an etching rate up to thirty times greater than conventional etching rates for similar perovskite materials selective to various substrate, barrier and mask layers, including SiO2.