Patents by Inventor Jingzhi XIONG

Jingzhi XIONG has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Folded termination with internal field plate
    Patent number: 10340332
    Abstract: A junction termination with an internal field plate, the field plate structure and the junction termination extension region are folded inside the device to make full use of the thickness of the drift region in the body, thereby reducing the area of the termination and relieving the electric field concentration at the end of the PN junction. The breakdown position is transferred from the surface into the body of the original PN junction, and the withstand voltage of termination can reach to the breakdown voltage of the parallel plane junction. Under such design, a smaller area can be obtained than that of the conventional structure at the same withstand voltage.
    Type: Grant
    Filed: September 17, 2016
    Date of Patent: July 2, 2019
    Assignees: UNIVERSITY OF ELECTRONIC SCIENCE AND TECHNOLOGY OF CHINA, INSTITUTE OF ELECTRONIC AND INFORMATION ENGINEERING OF UESTC IN GUANGDONG
    Inventors: Min Ren, Yumeng Zhang, Cong Di, Jingzhi Xiong, Zehong Li, Jinping Zhang, Wei Gao, Bo Zhang
  • Folded Termination with Internal Field Plate
    Publication number: 20190067415
    Abstract: A junction termination with an internal field plate, the field plate structure and the junction termination extension region are folded inside the device to make full use of the thickness of the drift region in the body, thereby reducing the area of the termination and relieving the electric field concentration at the end of the PN junction. The breakdown position is transferred from the surface into the body of the original PN junction, and the withstand voltage of termination can reach to the breakdown voltage of the parallel plane junction. Under such design, a smaller area can be obtained than that of the conventional structure at the same withstand voltage.
    Type: Application
    Filed: September 17, 2016
    Publication date: February 28, 2019
    Applicants: University of Electronic Science and Technology of China, Institute of Electronic and Information Engineering of UESTC in Guangdong
    Inventors: Min REN, Yumeng ZHANG, Cong DI, Jingzhi XIONG, Zehong LI, Jinping ZHANG, Wei GAO, Bo ZHANG