Patents by Inventor Jinhe Qi

Jinhe Qi has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method for manufacturing semiconductor structure
    Patent number: 10593550
    Abstract: This application relates to the technical field of semiconductors, and teaches methods for manufacturing a semiconductor structure. One implementation of a method includes: forming a semiconductor layer at a surface of a to-be-etched material layer on a substrate; forming an amorphous carbon layer on the semiconductor layer; forming a patterned mask layer on the amorphous carbon layer; and etching the amorphous carbon layer, the semiconductor layer, and the to-be-etched material layer using the patterned mask layer as a mask. This application may improve uniformity of the amorphous carbon layer, so that a position of a pattern that is formed after the to-be-etched material layer is etched does not deviate from an expected position, and a shape of the pattern is an expected shape.
    Type: Grant
    Filed: May 10, 2018
    Date of Patent: March 17, 2020
    Assignees: Semiconductor Manufacturing (Shanghai) International Corporation, Semiconductor Manufacturing (Beijing) International Corporation
    Inventors: Erhu Zheng, Jinhe Qi
  • METHOD FOR MANUFACTURING SEMICONDUCTOR STRUCTURE
    Publication number: 20180342393
    Abstract: This application relates to the technical field of semiconductors, and teaches methods for manufacturing a semiconductor structure. One implementation of a method includes: forming a semiconductor layer at a surface of a to-be-etched material layer on a substrate; forming an amorphous carbon layer on the semiconductor layer; forming a patterned mask layer on the amorphous carbon layer; and etching the amorphous carbon layer, the semiconductor layer, and the to-be-etched material layer using the patterned mask layer as a mask. This application may improve uniformity of the amorphous carbon layer, so that a position of a pattern that is formed after the to-be-etched material layer is etched does not deviate from an expected position, and a shape of the pattern is an expected shape.
    Type: Application
    Filed: May 10, 2018
    Publication date: November 29, 2018
    Applicants: Semiconductor Manufacturing International (Shanghai) Corporation, Semiconductor Manufacturing International (Beijing) Corporation
    Inventors: Erhu Zheng, Jinhe Qi