Abstract: A nozzle for a burner boom water spray system of an offshore plant that can more efficiently shield a high heat source generating when combusting gas generating upon drilling crude oil is provided. The nozzle includes: a front ejecting portion having a first nozzle tap at the center; a first side ejecting portion formed at a lower side of the front ejecting portion; a second side ejecting portion formed at a lower side of the first side ejecting portion; and a fastening portion formed at a lower side of the second side ejecting portion and coupled to a member for supplying a nozzle injection fluid. The nozzle provides a side ejecting portion of two stages in addition to a front ejecting portion, and thus an efficient water curtain pattern can be embodied.

Abstract: The present invention relates to a combi-card which can be used in a contact-type or noncontact-type fashion and a method for manufacturing the same. More particularly, this invention relates to a combi-card and a method for making the same, in which an inlay layer on which an antenna terminal made of a coil or conductive fiber is formed and a COB (chip on board) on which ACF (anisotropic conductor film) is applied, are pre-treated by a heating head and the like, the COB is attached to an antenna coil insertion layer, and an upper printing sheet with a protection film, and a lower printing sheet with a protection film, which are cut out to be suitable for the COB shape, are stacked to construct a combi-card.

Abstract: Provided are a method and system for testing a semiconductor memory device using an internal clock signal of the semiconductor memory device as a data strobe signal. The internally-generated data strobe signal may be delayed to synchronize with test data. Because a test device need not supply the data strobe signal, the number of semiconductor memory modules that can be simultaneously tested can be increased, and an average test time for a unit memory module can be decreased.

Abstract: The present invention relates to a combi-card which can be used in a contact-type or noncontact-type fashion and a method for manufacturing the same. More particularly, this invention relates to a combi-card and a method for making the same, in which an inlay layer on which an antenna terminal made of a coil or conductive fiber is formed and a COB (chip on board) on which ACF (anisotropic conductor film) is applied, are pre-treated by a heating head and the like, the COB is attached to an antenna coil insertion layer, and an upper printing sheet with a protection film, and a lower printing sheet with a protection film, which are cut out to be suitable for the COB shape, are stacked to construct a combi-card.

Abstract: Provided are a method and system for testing a semiconductor memory device using an internal clock signal of the semiconductor memory device as a data strobe signal. The internally-generated data strobe signal may be delayed to synchronize with test data. Because a test device need not supply the data strobe signal, the number of semiconductor memory modules that can be simultaneously tested can be increased, and an average test time for a unit memory module can be decreased.

Abstract: Provided are a circuit and a method for transforming a data input/output format of a semiconductor memory device which is capable of generating various types of data patterns when the number of memory cells connected to one column selection line is greater than the number of data input pins. The circuit for transforming a data input/output format of a semiconductor memory device includes a first transmission circuit, a second transmission circuit, and a mode register set (MRS). The first transmission circuit is activated when a first test mode signal is enabled, receives n data inputs from n data input ends, and transmits the n data inputs to m memory cells. Here, n and m are natural numbers and m is greater than n. The second transmission circuit is activated when a second test mode signal is enabled, receives n data inputs from the n data input ends, and transmits the n data inputs to the m memory cells.

Abstract: Provided are a circuit and a method for transforming a data input/output format of a semiconductor memory device which is capable of generating various types of data patterns when the number of memory cells connected to one column selection line is greater than the number of data input pins. The circuit for transforming a data input/output format of a semiconductor memory device includes a first transmission circuit, a second transmission circuit, and a mode register set (MRS). The first transmission circuit is activated when a first test mode signal is enabled, receives n data inputs from n data input ends, and transmits the n data inputs to m memory cells. Here, n and m are natural numbers and m is greater than n. The second transmission circuit is activated when a second test mode signal is enabled, receives n data inputs from the n data input ends, and transmits the n data inputs to the m memory cells.