Abstract: Semiconductor light-emitting devices are provided, which includes a substrate, a Negative-type semiconductor, a quantum well, an electron-blocking layer, and a Positive-type semiconductor arranged in a sequential stack. The quantum well includes a first quantum well, a second quantum well, and a third quantum well. Optical parameters of the first quantum well, the second quantum well, and the third quantum well are distributed in a gradient in at least one direction. The quantum well includes a periodic structure consisting of a well layer and a barrier layer. A coefficient of thermal expansion of the well layer is smaller than or equal to that of the barrier layer. An elastic coefficient of the well layer is smaller than or equal to that of the barrier layer. A lattice constant of the well layer is greater than or equal to that of the barrier layer. A coefficient of spontaneous polarization of the well layer is smaller than or equal to that of spontaneous polarization of the barrier layer.

Abstract: Disclosed is a semiconductor laser, from bottom to top, comprising: a substrate, a lower limiting layer, a lower waveguide layer, an active layer, an upper waveguide layer, and an upper limiting layer. The lower limiting layer is composed of at least one of AllnGaN, AllnN, AlGaN, InN, AlN, InGaN, and GaN. A thickness of the lower limiting layer is denoted as x, and 10 angstroms?x?90,000 angstroms. The lower limiting layer includes a first lower limiting layer, a second lower limiting layer, and a third lower limiting layer. The lower limiting layer forms an electron saving structure and a stress regulating structure to regulate a carrier distribution and a stress distribution of the active layer, thereby reducing a threshold current and improving a slope efficiency of the laser.

Abstract: The present disclosure provides a semiconductor green laser. The semiconductor green laser, from bottom to top, comprising a substrate, a lower limiting layer, a lower waveguide layer, an active layer, an upper waveguide layer, and an upper limiting layer. The active layer is a quantum well composed of well layers and barrier layers. Each of the well layers includes any one of AlInGaN, AlInN, AlGaN, AlN, InN, InGaN, and GaN, or any combination thereof. Each of the barrier layers includes any one of AlInGaN, AlInN, AlGaN, AlN, InN, InGaN, and GaN, or any combination thereof. An electron effective mass of each of the well layers is less than an electron effective mass of each of the barrier layers. A spontaneous polarization coefficient of each of the well layers is less than a spontaneous polarization coefficient of each of the barrier layers.

Abstract: This invention describes a novel method encompassing preparing a nitrosamine sample. adding in relevant chemicals that reduces or eliminates in situ nitrosamine formation, utilizing full evaporation static headspace gas chromatograph coupled with nitrogen phosphorous detector (FE-SHSGC-NPD), and analysis of rapid results in the gaseous phase for sensitive detection of semi-volatile nitrosamines, including ND.MA.

Abstract: Disclosed is a semiconductor laser with a substrate mode suppression layer, comprising a substrate, a first limiting layer, a first waveguide layer, an active layer, a second waveguide layer, an electron blocking layer, and a second limiting layer sequentially stacked from bottom to top. A Si/C concentration ratio of an element Si to an element C of the substrate mode suppression layer?that of the first sub-limiting layer?that of the second sub-limiting layer. An In/Al concentration ratio of an element In to an element Al of the substrate mode suppression layer?that of the first sub-limiting layer?that of the second sub-limiting layer. An H/C concentration ratio of an element H to an element C of the substrate mode suppression layer?that of the second sub-limiting layer?that of the first sub-limiting layer.

Abstract: Disclosed is a semiconductor laser with a substrate mode suppression layer, comprising a substrate, a first limiting layer, a first waveguide layer, an active layer, a second waveguide layer, an electron blocking layer, and a second limiting layer sequentially stacked from bottom to top. A Si/C concentration ratio of an element Si to an element C of the substrate mode suppression layer?that of the first sub-limiting layer?that of the second sub-limiting layer. An In/Al concentration ratio of an element In to an element Al of the substrate mode suppression layer?that of the first sub-limiting layer?that of the second sub-limiting layer. An H/C concentration ratio of an element H to an element C of the substrate mode suppression layer?that of the second sub-limiting layer?that of the first sub-limiting layer.

Abstract: A semiconductor light emitting element and a manufacture method thereof are provided. The semiconductor light emitting element includes: a substrate, an n-type semiconductor layer, a quantum well layer and a p-type semiconductor layer being arranged sequentially from bottom to top, and further includes a surface plasmon excition layer being arranged on the p-type semiconductor layer and a surface plasmon excited layer being arranged between the quantum well layer and the p-type semiconductor layer, or the surface plasmon excitation layer being arranged between the p-type semiconductor layer and the surface plasmon excitation layer, or the surface plasmon excitation layers being arranged respectively between the quantum well layer and the p-type semiconductor layer and between the p-type semiconductor layer and the surface plasmon excitation layer.

Abstract: A semiconductor light emitting element is provided and includes: a substrate, an n-type semiconductor layer, a doped quantum well layer, a control layer for suppressing light attenuation with age and a p-type semiconductor layer from bottom to top. The control layer for suppressing light attenuation with age sequentially includes an undoped quantum well layer having at least one undoped barrier layer, a first control layer for suppressing light attenuation and/or a second control layer for suppressing light attenuation from bottom to top. The present disclosure reduces probability of Si of the doped quantum well layer and Mg of the p-type semiconductor layer diffusing and coming into contact with each other during long-term aging process, thereby suppressing light attenuation with age of the semiconductor light emitting element. A light attenuation of 1000 hours is reduced from 30% or higher (even 50% or higher) to within 10%.

Abstract: A micro light-emitting device includes a support substrate, at least one micro light-emitting element, and a support structure. The support structure includes a bonding layer, an electrically conductive layer, and a protective insulation layer. The micro light-emitting element is supported by the support structure on the support substrate. The micro light-emitting element includes a light-emitting structure and first and second electrodes. First and second contact regions of the first electrode are respectively connected to a supporting post portion of the electrically conductive layer and a surrounding post portion of the protective insulation layer. A production method of the device and use of the element are also disclosed.

Abstract: A mass transfer method includes providing a transfer unit and a semiconductor carrying unit connected therewith, removing an element supporting structure of the semiconductor carrying unit from micro semiconductor elements of the semiconductor carrying unit, partially removing the photosensitive layer to form connecting structures, connecting a package substrate with electrodes of the micro semiconductor elements, breaking the connecting structures to separate the micro semiconductor elements from the transfer substrate. A mass transfer device is also disclosed.

Abstract: A mass transfer method includes providing a transfer unit and a semiconductor carrying unit connected therewith, removing an element supporting structure of the semiconductor carrying unit from micro semiconductor elements of the semiconductor carrying unit, partially removing the photosensitive layer to form connecting structures, connecting a package substrate with electrodes of the micro semiconductor elements, breaking the connecting structures to separate the micro semiconductor elements from the transfer substrate. A mass transfer device is also disclosed.

Abstract: A mass transfer method includes forming a photosensitive layer on a transfer substrate, heating the photosensitive layer at a temperature for the same to be in a partially cured state, disposing micro semiconductor elements on the photosensitive layer in the partially cured state, partially removing the photosensitive layer to form connecting structures, providing a package substrate and metallic support members, subjecting the metallic support members and the micro semiconductor elements to a eutectic process, breaking the connecting structures to separate the micro semiconductor elements from the transfer substrate, and removing the remaining connecting structures from the micro semiconductor elements.

Abstract: A process for packaging at least one component includes the steps of: a) providing a substrate and a packaging material layer, b) forming the packaging material layer into an adhesively semi-cured packaging material layer, c) adhering the adhesively semi-cured packaging material layer to an array, d) providing a packaging unit including at least one eutectic metal bump pair, e) permitting the eutectic metal bump pair to be in contact with at least one electrode pair on the array, f) subjecting the electrode pair to eutectic bonding to the eutectic metal bump pair, g) encapsulating the component by pressing, h) completely curing the adhesively semi-cured packaging material layer, and i) removing the substrate.

Abstract: A light emitting diode (LED) device includes a light emitting epitaxial layer having opposite first and second surfaces and a plurality of microlenses formed on the first surface. The light emitting epitaxial layer includes a first type semiconductor layer defining the first surface, a second type semiconductor layer defining the second surface, and a light emitting layer disposed between the first and second type semiconductor layers and spaced apart from the first and second surfaces. The microlenses are formed on the first surface and formed of a light transmissible substrate for epitaxial growth of the light emitting epitaxial layer. A method for manufacturing the light emitting diode device is also disclosed.

Abstract: A micro light-emitting device includes a support substrate, at least one micro light-emitting element, and a support structure. The support structure includes a bonding layer, an electrically conductive layer, and a protective insulation layer. The micro light-emitting element is supported by the support structure on the support substrate. The micro light-emitting element includes a light-emitting structure and first and second electrodes. First and second contact regions of the first electrode are respectively connected to a supporting post portion of the electrically conductive layer and a surrounding post portion of the protective insulation layer. A production method of the device and use of the element are also disclosed.

Abstract: A micro device transferring apparatus includes a first conveying mechanism, a carrier unit, a push device and a release device. The first conveying mechanism includes a release tape having a release adhesive, a first roller connected to an end of the release tape, and a conveying device connected to a horizontal section of the release tape to drive the release tape to move in a moving direction. The carrier unit includes a first carrier holding multiple micro devices, and a second carrier for receiving the micro devices. The push device is for pushing the release tape to pick up the micro devices with the release adhesive. The release device is for decomposing the release adhesive to release the micro devices.

Abstract: A mass transfer method includes forming a photosensitive layer on a transfer substrate, heating the photosensitive layer at a temperature for the same to be in a partially cured state, disposing micro semiconductor elements on the photosensitive layer in the partially cured state, partially removing the photosensitive layer to form connecting structures, providing a package substrate and metallic support members, subjecting the metallic support members and the micro semiconductor elements to a eutectic process, breaking the connecting structures to separate the micro semiconductor elements from the transfer substrate, and removing the remaining connecting structures from the micro semiconductor elements.

Abstract: A process for packaging at least one component includes the steps of: a) providing a substrate and a packaging material layer, b) forming the packaging material layer into an adhesively semi-cured packaging material layer, c) adhering the adhesively semi-cured packaging material layer to an array, d) providing a packaging unit including at least one eutectic metal bump pair, e) permitting the eutectic metal bump pair to be in contact with at least one electrode pair on the array, f) subjecting the electrode pair to eutectic bonding to the eutectic metal bump pair, g) encapsulating the component by pressing, h) completely curing the adhesively semi-cured packaging material layer, and i) removing the substrate.

Abstract: A light emitting diode (LED) device includes a light emitting epitaxial layer having opposite first and second surfaces and a plurality of microlenses formed on the first surface. The light emitting epitaxial layer includes a first type semiconductor layer defining the first surface, a second type semiconductor layer defining the second surface, and a light emitting layer disposed between the first and second type semiconductor layers and spaced apart from the first and second surfaces. The microlenses are formed on the first surface and formed of a light transmissible substrate for epitaxial growth of the light emitting epitaxial layer. A method for manufacturing the light emitting diode device is also disclosed.

Abstract: A bonding electrode structure of a flip-chip LED chip includes: a substrate; a light-emitting epitaxial layer over the substrate; a bonding electrode over the light-emitting epitaxial layer, wherein the bonding electrode structure includes a metal laminated layer having a bottom layer and an upper surface layer from bottom up. The bottom layer structure is oxidable metal and the side wall forms an oxide layer. The upper surface layer is non-oxidable metal. The bonding electrode structure has a main contact portion, and a grid-shape portion surrounding the main contact portion in a horizontal direction. The problems during packaging and soldering of the flip-chip LED chip structure, such as short circuit or electric leakage, can thus be solved.