Abstract: A micro light-emitting device includes a support substrate, at least one micro light-emitting element, and a support structure. The support structure includes a bonding layer, an electrically conductive layer, and a protective insulation layer. The micro light-emitting element is supported by the support structure on the support substrate. The micro light-emitting element includes a light-emitting structure and first and second electrodes. First and second contact regions of the first electrode are respectively connected to a supporting post portion of the electrically conductive layer and a surrounding post portion of the protective insulation layer. A production method of the device and use of the element are also disclosed.

Abstract: A mass transfer method includes providing a transfer unit and a semiconductor carrying unit connected therewith, removing an element supporting structure of the semiconductor carrying unit from micro semiconductor elements of the semiconductor carrying unit, partially removing the photosensitive layer to form connecting structures, connecting a package substrate with electrodes of the micro semiconductor elements, breaking the connecting structures to separate the micro semiconductor elements from the transfer substrate. A mass transfer device is also disclosed.

Abstract: A mass transfer method includes providing a transfer unit and a semiconductor carrying unit connected therewith, removing an element supporting structure of the semiconductor carrying unit from micro semiconductor elements of the semiconductor carrying unit, partially removing the photosensitive layer to form connecting structures, connecting a package substrate with electrodes of the micro semiconductor elements, breaking the connecting structures to separate the micro semiconductor elements from the transfer substrate. A mass transfer device is also disclosed.

Abstract: A mass transfer method includes forming a photosensitive layer on a transfer substrate, heating the photosensitive layer at a temperature for the same to be in a partially cured state, disposing micro semiconductor elements on the photosensitive layer in the partially cured state, partially removing the photosensitive layer to form connecting structures, providing a package substrate and metallic support members, subjecting the metallic support members and the micro semiconductor elements to a eutectic process, breaking the connecting structures to separate the micro semiconductor elements from the transfer substrate, and removing the remaining connecting structures from the micro semiconductor elements.

Abstract: A process for packaging at least one component includes the steps of: a) providing a substrate and a packaging material layer, b) forming the packaging material layer into an adhesively semi-cured packaging material layer, c) adhering the adhesively semi-cured packaging material layer to an array, d) providing a packaging unit including at least one eutectic metal bump pair, e) permitting the eutectic metal bump pair to be in contact with at least one electrode pair on the array, f) subjecting the electrode pair to eutectic bonding to the eutectic metal bump pair, g) encapsulating the component by pressing, h) completely curing the adhesively semi-cured packaging material layer, and i) removing the substrate.

Abstract: A light emitting diode (LED) device includes a light emitting epitaxial layer having opposite first and second surfaces and a plurality of microlenses formed on the first surface. The light emitting epitaxial layer includes a first type semiconductor layer defining the first surface, a second type semiconductor layer defining the second surface, and a light emitting layer disposed between the first and second type semiconductor layers and spaced apart from the first and second surfaces. The microlenses are formed on the first surface and formed of a light transmissible substrate for epitaxial growth of the light emitting epitaxial layer. A method for manufacturing the light emitting diode device is also disclosed.

Abstract: A micro light-emitting device includes a support substrate, at least one micro light-emitting element, and a support structure. The support structure includes a bonding layer, an electrically conductive layer, and a protective insulation layer. The micro light-emitting element is supported by the support structure on the support substrate. The micro light-emitting element includes a light-emitting structure and first and second electrodes. First and second contact regions of the first electrode are respectively connected to a supporting post portion of the electrically conductive layer and a surrounding post portion of the protective insulation layer. A production method of the device and use of the element are also disclosed.

Abstract: A micro device transferring apparatus includes a first conveying mechanism, a carrier unit, a push device and a release device. The first conveying mechanism includes a release tape having a release adhesive, a first roller connected to an end of the release tape, and a conveying device connected to a horizontal section of the release tape to drive the release tape to move in a moving direction. The carrier unit includes a first carrier holding multiple micro devices, and a second carrier for receiving the micro devices. The push device is for pushing the release tape to pick up the micro devices with the release adhesive. The release device is for decomposing the release adhesive to release the micro devices.

Abstract: A mass transfer method includes forming a photosensitive layer on a transfer substrate, heating the photosensitive layer at a temperature for the same to be in a partially cured state, disposing micro semiconductor elements on the photosensitive layer in the partially cured state, partially removing the photosensitive layer to form connecting structures, providing a package substrate and metallic support members, subjecting the metallic support members and the micro semiconductor elements to a eutectic process, breaking the connecting structures to separate the micro semiconductor elements from the transfer substrate, and removing the remaining connecting structures from the micro semiconductor elements.

Abstract: A process for packaging at least one component includes the steps of: a) providing a substrate and a packaging material layer, b) forming the packaging material layer into an adhesively semi-cured packaging material layer, c) adhering the adhesively semi-cured packaging material layer to an array, d) providing a packaging unit including at least one eutectic metal bump pair, e) permitting the eutectic metal bump pair to be in contact with at least one electrode pair on the array, f) subjecting the electrode pair to eutectic bonding to the eutectic metal bump pair, g) encapsulating the component by pressing, h) completely curing the adhesively semi-cured packaging material layer, and i) removing the substrate.

Abstract: A light emitting diode (LED) device includes a light emitting epitaxial layer having opposite first and second surfaces and a plurality of microlenses formed on the first surface. The light emitting epitaxial layer includes a first type semiconductor layer defining the first surface, a second type semiconductor layer defining the second surface, and a light emitting layer disposed between the first and second type semiconductor layers and spaced apart from the first and second surfaces. The microlenses are formed on the first surface and formed of a light transmissible substrate for epitaxial growth of the light emitting epitaxial layer. A method for manufacturing the light emitting diode device is also disclosed.

Abstract: A bonding electrode structure of a flip-chip LED chip includes: a substrate; a light-emitting epitaxial layer over the substrate; a bonding electrode over the light-emitting epitaxial layer, wherein the bonding electrode structure includes a metal laminated layer having a bottom layer and an upper surface layer from bottom up. The bottom layer structure is oxidable metal and the side wall forms an oxide layer. The upper surface layer is non-oxidable metal. The bonding electrode structure has a main contact portion, and a grid-shape portion surrounding the main contact portion in a horizontal direction. The problems during packaging and soldering of the flip-chip LED chip structure, such as short circuit or electric leakage, can thus be solved.

Abstract: A nitride white-light LED includes: a substrate; an epitaxial layer; an N-type electrode and a P-type electrode; channels are formed on the substrate and the epitaxial layer; temperature isolation layers are formed with low thermal conductivity material thereon to form three independent temperature zones (Zones I/II/III) on a single chip; temperature control layers are formed with high thermal conductivity material on the side wall of the epitaxial layer and the back surface of the substrate at Zones I/II/III, and control temperature of the epitaxial layer and the substrate; based on different thermal expansion coefficients, lattice constants of the nitride and the substrate at Zones I/II/III are regulated to adjust the biaxial stress to which the nitride; quantum wells change conduction band bottom and valence band top positions to change forbidden band widths and light-emitting wavelengths; the LED can emit red, green and blue lights by a single chip.

Abstract: A bonding electrode structure of a flip-chip LED chip includes: a substrate; a light-emitting epitaxial layer over the substrate; a bonding electrode over the light-emitting epitaxial layer, wherein the bonding electrode structure includes a metal laminated layer having a bottom layer and an upper surface layer from bottom up. The bottom layer structure is oxidable metal and the side wall forms an oxide layer. The upper surface layer is non-oxidable metal. The bonding electrode structure has a main contact portion, and a grid-shape portion surrounding the main contact portion in a horizontal direction. The problems during packaging and soldering of the flip-chip LED chip structure, such as short circuit or electric leakage, can thus be solved.

Abstract: A nitride white-light LED includes: a substrate; an epitaxial layer; an N-type electrode and a P-type electrode; channels are formed on the substrate and the epitaxial layer; temperature isolation layers are formed with low thermal conductivity material thereon to form three independent temperature zones (Zones I/II/III) on a single chip; temperature control layers are formed with high thermal conductivity material on the side wall of the epitaxial layer and the back surface of the substrate at Zones I/II/III, and control temperature of the epitaxial layer and the substrate; based on different thermal expansion coefficients, lattice constants of the nitride and the substrate at Zones I/II/III are regulated to adjust the biaxial stress to which the nitride; quantum wells change conduction band bottom and valence band top positions to change forbidden band widths and light-emitting wavelengths; the LED can emit red, green and blue lights by a single chip.

Abstract: A nitride light emitting diode includes: an n-type nitride layer, a light emitting layer and a p-type nitride layer in sequence, wherein, the light emitting layer is a MQW structure composed of a barrier layer and a well layer, in which, an AlGaN electron tunneling layer is inserted into at least one well layer closing to the n-type nitride layer with barrier height greater than that of the barrier layer; in addition, the barriers of the AlGaN electron tunneling layer and the well layer are high enough so that electrons are difficult to transit towards thermionic emission direction, but mainly transit through tunneling in the InGaN well layers, which confines electron mobility and adjusts electron distribution. Hence, electrons have less chance to spill over into the P-type nitride layer.

Abstract: A light emitting diode (LED) includes quantum dots serving as the quantum well layer in the multiple-quantum well (MQW) structure, which can greatly improve the combination efficiency of electrons and holes due to quantum confinement effect; a nanoscale metal reflective layer is formed between the quantum barrier layer with nanoscale pits to instantly reflect the light emitted downwards from the MQW to the front of epitaxial structure; in addition, the nanoscale metal reflective layer can form surface plasmon to further improve light emitting efficiency.