Abstract: The present invention relates to a piezoelectric ceramic stacked structure, and the piezoelectric ceramic stacked structure includes at least one first layer including a KNN-based ceramic; and at least one second layer including a BFO-based ceramic, wherein a ratio of a number (n1) of the first layers stacked to a number (n2) of the second layers stacked in the piezoelectric ceramic stacked structure satisfies Equation (1) below: 0.8×|q|/|p|?n1/n2?1.2×|q|/|p|??(1) (Equation (1) is as defined in the Description).

Abstract: A pixel includes an organic light emitting diode (OLED), a pixel circuit, and first and second transistors. The OLD includes a cathode electrode connected to a second power source. The pixel circuit includes a driving transistor having a gate electrode initialized by a third power source. The driving transistor controls the amount of current flowing from a first power source to the second power source via the OLED. The first transistor is connected between a fourth power source and the second power source and an anode electrode of the OLED. The first transistor is turned on based on a scan signal is supplied to a scan line. The second transistor is connected between a data line and the pixel circuit. The second transistor is turned on when the scan signal is supplied to the ith scan line.

Abstract: A gravity type water-purifying device is provided.

Abstract: A target gene identifying method for tumor treatment according to the present invention comprises the steps of: taking multiple samples from a patent's tumor; analyzing the multiple samples for genetic variation: subjecting the multiple samples to drug screening to measure drug sensitivity of each sample; analyzing tumor heterogeneity on the basis of the genetic variation analysis result and the drug sensitivity measurement result; and identifying a target gene of the tumor on the basis of the tumor heterogeneity analysis result.

Abstract: The present disclosure relates to an antibody binding to Neuropilin 1 (NRP1) or an antigen-binding fragment thereof, a nucleic acid encoding the same, a vector comprising the nucleic acid, a cell transformed with the vector, a method for preparing the antibody or the antigen-binding fragment thereof, an antibody-drug conjugate comprising the antibody or the antigen-binding fragment thereof, and a composition thereof for preventing or treating a cancer.

Abstract: The present disclosure relates to an antibody binding to Neuropilin 1 (NRP1) or an antigen-binding fragment thereof, a nucleic acid encoding the same, a vector comprising the nucleic acid, a cell transformed with the vector, a method for preparing the antibody or the antigen-binding fragment thereof, an antibody-drug conjugate comprising the antibody or the antigen-binding fragment thereof, and a composition thereof for preventing or treating a cancer.

Abstract: A method for fabricating a semiconductor device includes forming a first conductive layer doped with an impurity for forming a cell junction over a semiconductor substrate, forming a second layer over the first conductive layer, forming a plurality of active regions by etching the second layer and the first conductive layer, the plurality of the active regions being separated from one another by trenches, forming a side contact connected to a sidewall of the first conductive layer, and forming a plurality of metal bit lines each connected to the side contact and filling a portion of each trench.

Abstract: A semiconductor substrate and a fabrication method thereof, and a semiconductor apparatus using the same and a fabrication method thereof are provided. The semiconductor substrate includes a semiconductor wafer, a silicon germanium (SiGe)-based impurity doping region formed on the semiconductor wafer, and a protection layer formed on the SiGe-based impurity doping region.

Abstract: A method for fabricating a semiconductor device includes forming a first conductive layer doped with an impurity for forming a cell junction over a semiconductor substrate, forming a second layer over the first conductive layer, forming a plurality of active regions by etching the second layer and the first conductive layer, the plurality of the active regions being separated from one another by trenches, forming a side contact connected to a sidewall of the first conductive layer, and forming a plurality of metal bit lines each connected to the side contact and filling a portion of each trench.

Abstract: A method for fabricating a semiconductor device includes forming a first conductive layer doped with an impurity for forming a cell junction over a semiconductor substrate, forming a second layer over the first conductive layer, forming a plurality of active regions by etching the second layer and the first conductive layer, the plurality of the active regions being separated from one another by trenches, forming a side contact connected to a sidewall of the first conductive layer, and forming a plurality of metal bit lines each connected to the side contact and filling a portion of each trench.

Abstract: A method for fabricating a semiconductor device includes forming a first conductive layer doped with an impurity for forming a cell junction over a semiconductor substrate, forming a second layer over the first conductive layer, forming a plurality of active regions by etching the second layer and the first conductive layer, the plurality of the active regions being separated from one another by trenches, forming a side contact connected to a sidewall of the first conductive layer, and forming a plurality of metal bit lines each connected to the side contact and filling a portion of each trench.

Abstract: A doping method that forms a doped region at a desired location of a three-dimensional (3D) conductive structure, controls the doping depth and doping dose of the doped region relatively easily, has a shallow doping depth, and prevents a floating body effect. A semiconductor device is fabricated using the same doping method. The method includes, forming a conductive structure having a sidewall, exposing a portion of the sidewall of the conductive structure, and forming a doped region in the exposed portion of the sidewall by performing a plasma doping process.

Abstract: A PCRAM device and a method of manufacturing the same are provided. The PCRAM device includes a semiconductor substrate, and a PN diode formed on the semiconductor substrate and including a layer interposed therein to suppress thermal diffusion of ions.

Abstract: A semiconductor substrate and a fabrication method thereof, and a semiconductor apparatus using the same and a fabrication method thereof are provided. The semiconductor substrate includes a semiconductor wafer, a silicon germanium (SiGe)-based impurity doping region formed on the semiconductor wafer, and a protection layer formed on the SiGe-based impurity doping region.

Abstract: The semiconductor apparatus includes a semiconductor substrate, an insulating layer formed in the semiconductor substrate to be spaced from a surface of the semiconductor substrate by a predetermined depth and formed to extend to a first direction to have a predetermined width, and an active region formed to be in contact with the semiconductor substrate below the insulating layer through a source post that is formed to vertically penetrate a predetermined portion of the insulating layer, and formed on the insulating layer and the source post to extend to the first direction to have a predetermined width.

Abstract: A doping method that forms a doped region at a desired location of a three-dimensional (3D) conductive structure, controls the doping depth and doping dose of the doped region relatively easily, has a shallow doping depth, and prevents a floating body effect. A semiconductor device is fabricated using the same doping method. The method includes, forming a conductive structure having a sidewall, exposing a portion of the sidewall of the conductive structure, and forming a doped region in the exposed portion of the sidewall by performing a plasma doping process.

Abstract: A PCRAM device and a method of manufacturing the same are provided. The PCRAM device includes a semiconductor substrate, and a PN diode formed on the semiconductor substrate and including a layer interposed therein to suppress thermal diffusion of ions.

Abstract: A semiconductor device and a fabrication method thereof are provided. The semiconductor device includes a first type semiconductor layer doped with an N type ion, a second type semiconductor layer formed over the first type semiconductor layer, and a silicon germanium (SiGe) layer doped with a P type ion formed over the second type semiconductor layer.

Abstract: A schottky diode, a resistive memory device including the schottky diode and a method of manufacturing the same. The resistive memory device includes a semiconductor substrate including a word line, a schottky diode formed on the word line, and a storage layer formed on the schottky diode. The schottky diode includes a first semiconductor layer, a conductive layer formed on the first semiconductor layer and having a lower work function than the first semiconductor layer, and a second semiconductor layer formed on the to conductive layer.

Abstract: A method for fabricating a semiconductor device includes etching a substrate to form a pillar isolated by a trench, forming a buffer layer along the entire structure including the pillar, forming a diffusion barrier layer that exposes a portion of the buffer layer at a first sidewall of the pillar, forming a liner layer along the entire structure including the diffusion barrier layer, selectively ion-implanting dopants into the liner layer, and forming a junction in the first sidewall of the pillar by diffusing the dopants through a thermal process.