Patents by Inventor Jin Kyoung Yoo
Jin Kyoung Yoo has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 9343624Abstract: A light emitting device is disclosed. The light emitting device includes a conductive support layer; a reflective layer disposed on the conductive support layer; a nitride semiconductor layer disposed on the reflective layer. Furthermore, the nitride semiconductor layer includes a second-type semiconductor layer on the reflective layer, an active layer on the second-type semiconductor layer, and a first-type semiconductor layer on the active layer; a light extraction structure disposed on the first-type semiconductor layer; and a first-type electrode disposed on the light extraction structure.Type: GrantFiled: November 24, 2014Date of Patent: May 17, 2016Assignees: LG ELECTRONICS INC., LG Innotek Co., Ltd.Inventors: Jong Wook Kim, Hyun Kyong Cho, Gyu Chul Yi, Sung Jin An, Jin Kyoung Yoo, Young Joon Hong
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Publication number: 20150102370Abstract: A light emitting device is disclosed. The light emitting device includes a conductive support layer; a reflective layer disposed on the conductive support layer; a nitride semiconductor layer disposed on the reflective layer. Furthermore, the nitride semiconductor layer includes a second-type semiconductor layer on the reflective layer, an active layer on the second-type semiconductor layer, and a first-type semiconductor layer on the active layer; a light extraction structure disposed on the first-type semiconductor layer; and a first-type electrode disposed on the light extraction structure.Type: ApplicationFiled: November 24, 2014Publication date: April 16, 2015Applicants: LG INNOTEK CO., LTD., LG ELECTRONICS INC.Inventors: Jong Wook KIM, Hyun Kyong CHO, Gyu Chul YI, Sung Jin AN, Jin Kyoung YOO, Young Joon HONG
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Patent number: 8912556Abstract: A light emitting device and a method of manufacturing the same are disclosed. The light emitting device includes a buffer layer formed on a substrate, a nitride semiconductor layer including a first semiconductor layer, an active layer, and a second semiconductor layer, which are sequentially stacked on the buffer layer, a portion of the first semiconductor layer being exposed to the outside by performing mesa etching from the second semiconductor layer to the portion of the first semiconductor layer, and at least one nanocone formed on the second semiconductor layer.Type: GrantFiled: January 6, 2014Date of Patent: December 16, 2014Assignees: LG Electronics Inc., LG Innotek Co., Ltd.Inventors: Jong Wook Kim, Hyun Kyong Cho, Gyu Chul Yi, Sung Jin An, Jin Kyoung Yoo, Young Joon Hong
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Publication number: 20140117378Abstract: A light emitting device and a method of manufacturing the same are disclosed. The light emitting device includes a buffer layer formed on a substrate, a nitride semiconductor layer including a first semiconductor layer, an active layer, and a second semiconductor layer, which are sequentially stacked on the buffer layer, a portion of the first semiconductor layer being exposed to the outside by performing mesa etching from the second semiconductor layer to the portion of the first semiconductor layer, and at least one nanocone formed on the second semiconductor layer.Type: ApplicationFiled: January 6, 2014Publication date: May 1, 2014Applicants: LG Innotek Co., Ltd., LG Electronics Inc.Inventors: Jong Wook KIM, Hyun Kyong CHO, Gyu Chul YI, Sung Jin AN, Jin Kyoung YOO, Young Joon HONG
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Patent number: 8643035Abstract: A light emitting device and a method of manufacturing the same are disclosed. The light emitting device includes a buffer layer formed on a substrate, a nitride semiconductor layer including a first semiconductor layer, an active layer, and a second semiconductor layer, which are sequentially stacked on the buffer layer, a portion of the first semiconductor layer being exposed to the outside by performing mesa etching from the second semiconductor layer to the portion of the first semiconductor layer, and at least one nanocone formed on the second semiconductor layer.Type: GrantFiled: June 5, 2012Date of Patent: February 4, 2014Assignee: LG Electronics Inc.Inventors: Jong Wook Kim, Hyun Kyong Cho, Gyu Chul Yi, Sung Jin An, Jin Kyoung Yoo, Young Joon Hong
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Patent number: 8598607Abstract: A light emitting device and a method of manufacturing the same are disclosed. The light emitting device includes a buffer layer formed on a substrate, a nitride semiconductor layer including a first semiconductor layer, an active layer, and a second semiconductor layer, which are sequentially stacked on the buffer layer, a portion of the first semiconductor layer being exposed to the outside by performing mesa etching from the second semiconductor layer to the portion of the first semiconductor layer, and at least one nanocone formed on the second semiconductor layer.Type: GrantFiled: March 24, 2010Date of Patent: December 3, 2013Assignees: LG Electronics Inc., LG Innotek Co., Ltd.Inventors: Jong Wook Kim, Hyun Kyong Cho, Gyu Chul Yi, Sung Jin An, Jin Kyoung Yoo, Young Joon Hong
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Publication number: 20120241757Abstract: A light emitting device and a method of manufacturing the same are disclosed. The light emitting device includes a buffer layer formed on a substrate, a nitride semiconductor layer including a first semiconductor layer, an active layer, and a second semiconductor layer, which are sequentially stacked on the buffer layer, a portion of the first semiconductor layer being exposed to the outside by performing mesa etching from the second semiconductor layer to the portion of the first semiconductor layer, and at least one nanocone formed on the second semiconductor layer.Type: ApplicationFiled: June 5, 2012Publication date: September 27, 2012Inventors: Jong Wook KIM, Hyun Kyong Cho, Gyu Chul YI, Sung Jin An, Jin Kyoung Yoo, Young Joon Hong
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Patent number: 8242676Abstract: A field emission device, a field emission display device, and a method for manufacturing the same are disclosed. The field emission device includes: i) a substrate; ii) an electrode positioned on the substrate; iii) a mask layer positioned on the electrode and including one or more openings; and iv) a plurality of nanostructures positioned on the electrode via the openings and formed to extend radially. The plurality of nanostructures may be applied to emit an electron upon receiving a voltage from the electrode.Type: GrantFiled: June 23, 2009Date of Patent: August 14, 2012Assignee: LG Display Co., Ltd.Inventors: Yong-Jin Kim, Jin-Kyoung Yoo, Young-Joon Hong, Gyu-Chul Yi, Chul-Ho Lee
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Publication number: 20100176416Abstract: A light emitting device and a method of manufacturing the same are disclosed. The light emitting device includes a buffer layer formed on a substrate, a nitride semiconductor layer including a first semiconductor layer, an active layer, and a second semiconductor layer, which are sequentially stacked on the buffer layer, a portion of the first semiconductor layer being exposed to the outside by performing mesa etching from the second semiconductor layer to the portion of the first semiconductor layer, and at least one nanocone formed on the second semiconductor layer.Type: ApplicationFiled: March 24, 2010Publication date: July 15, 2010Inventors: Jong Wook KIM, Hyun Kyong Cho, Gyu Chul Yi, Sung Jin An, Jin Kyoung Yoo, Young Joon Hong
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Publication number: 20100156272Abstract: A field emission device, a field emission display device, and a method for manufacturing the same are disclosed. The field emission device includes: i) a substrate; ii) an electrode positioned on the substrate; iii) a mask layer positioned on the electrode and including one or more openings; and iv) a plurality of nanostructures positioned on the electrode via the openings and formed to extend radially. The plurality of nanostructures may be applied to emit an electron upon receiving a voltage from the electrode.Type: ApplicationFiled: June 23, 2009Publication date: June 24, 2010Applicant: POSTECH ACADEMY-INDUSTRY FOUNDATIONInventors: Yong-Jin Kim, Jin-Kyoung Yoo, Young-Joon Hong, Gyu-Chul Yi, Chul-Ho Lee
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Patent number: 7714337Abstract: A light emitting device and a method of manufacturing the same are disclosed. The light emitting device includes a buffer layer formed on a substrate, a nitride semiconductor layer including a first semiconductor layer, an active layer, and a second semiconductor layer, which are sequentially stacked on the buffer layer, a portion of the first semiconductor layer being exposed to the outside by performing mesa etching from the second semiconductor layer to the portion of the first semiconductor layer, and at least one nanocone formed on the second semiconductor layer.Type: GrantFiled: February 16, 2007Date of Patent: May 11, 2010Assignee: LG Electronics Inc.Inventors: Jong Wook Kim, Hyun Kyong Cho, Gyu Chul Yi, Sung Jin An, Jin Kyoung Yoo, Young Joon Hong
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Publication number: 20080272382Abstract: A light emitting device and a method of manufacturing the same are disclosed. The light emitting device includes a buffer layer formed on a substrate, a nitride semiconductor layer including a first semiconductor layer, an active layer, and a second semiconductor layer, which are sequentially stacked on the buffer layer, a portion of the first semiconductor layer being exposed to the outside by performing mesa etching from the second semiconductor layer to the portion of the first semiconductor layer, and at least one nanocone formed on the second semiconductor layer.Type: ApplicationFiled: February 16, 2007Publication date: November 6, 2008Applicants: LG Electronics Inc., LG INNOTEK CO., LTD.Inventors: Jong Wook Kim, Hyun Kyong Cho, Gyu Chul Yi, Sung Ji An, Jin Kyoung Yoo, Young Joon Hong
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Patent number: 7388201Abstract: A radiation detector has an electron emitter that includes a coated nanostructure on a support. The nanostructure can include a plurality of nanoneedles. A nanoneedle is a shaft tapering from a base portion toward a tip portion. The tip portion has a diameter between about 1 nm to about 50 nm and the base portion has a diameter between about 20 nm to about 300 nm. Each shaft has a length between about 100 nm to about 3,000 nm and an aspect ratio larger than 10. A coating covers at least the tip portions of the shafts. The coating exhibits negative electron affinity and is capable of emitting secondary electrons upon being irradiated by radiation. The nanostructure can also include carbon nanotubes (CNTs) coated with a material selected from the group of aluminum nitride (AlN), gallium nitride (GaN), and zinc oxide (ZnO).Type: GrantFiled: May 13, 2005Date of Patent: June 17, 2008Assignees: National University of Singapore, Agency for Science, Technology and Research, Pohang University of Science and Technology, Nanyang Technological UniversityInventors: Marian Cholewa, Shu Ping Lau, Gyu-Chul Yi, Jin Kyoung Yoo, Adrian Paul Burden, Lei Huang, Xingyu Gao, Andrew Thye Shen Wee, Herbert Oskar Moser