Patents by Inventor Jinkyung SON

Jinkyung SON has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20240313077
    Abstract: Disclosed is a semiconductor device comprising a substrate including an active pattern, a channel pattern on the active pattern and including semiconductor patterns that are vertically stacked and spaced apart from each other, a source/drain pattern connected to the semiconductor patterns, a gate electrode on the semiconductor patterns and including inner electrodes between neighboring semiconductor patterns and an outer electrode on an uppermost semiconductor pattern, and a capping pattern on a top surface of the outer electrode. A line-width of the outer electrode is a first width. The outer electrode has a first height. The first height is equal to or less than the first width.
    Type: Application
    Filed: December 12, 2023
    Publication date: September 19, 2024
    Applicant: Samsung Electronics Co., Ltd.
    Inventors: Chulsung KIM, Yeonghan GWON, Jinkyung SON, Jaepo LIM
  • Publication number: 20230187519
    Abstract: A semiconductor device is provided. The semiconductor device includes: a substrate with an active region extending in a first direction; an element isolation layer, adjacent to the active region, in the substrate; a gate electrode on the substrate and extending in a second direction which crosses the first direction; a plurality of channel layers on the active region, spaced apart from each other along a third direction perpendicular to an upper surface of the substrate, and surrounded by the gate electrode; and a source/drain region provided in a recess of the active region adjacent to the gate electrode, and connected to the plurality of channel layers. In the first direction, the gate electrode has a first length on the active region and a second length, greater than the first length, on the element isolation layer.
    Type: Application
    Filed: August 26, 2022
    Publication date: June 15, 2023
    Applicant: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Jinkyung SON, Seungje KIM, Jiwon PARK, Jaepo LIM, Minseok JO, Seunghyun LIM, Jinyoung CHOI