Patents by Inventor Jinli GONG

Jinli GONG has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • INSULATED GATE BIPOLAR TRANSISTOR
    Publication number: 20220376094
    Abstract: An insulated gate bipolar transistor, comprising an anode second conductivity-type region and an anode first conductivity-type region provided on a drift region; the anode first conductivity-type region comprises a first region and a second region, and the anode second conductivity-type region comprises a third region and a fourth region, the dopant concentration of the first region being less than that of the second region, the dopant concentration of the third region being less than that of the fourth region, the third region being provided between the fourth region and a body region, the first region being provided below the fourth region, and the second region being provided below the third region and located between the first region and the body region.
    Type: Application
    Filed: August 26, 2020
    Publication date: November 24, 2022
    Inventors: Long ZHANG, Jie MA, Yan GU, Sen ZHANG, Jing ZHU, Jinli GONG, Weifeng SUN, Longxing SHI