Patents by Inventor Jinliang HU

Jinliang HU has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20210225886
    Abstract: A thin film transistor, a display panel and a preparation method thereof and a display apparatus are provided. The thin film transistor includes: a substrate; a gate metal located on a side of the substrate; a gate insulating layer located on a side of the gate metal away from the substrate; an active layer located on a side of the gate insulating layer away from the substrate; a first metal oxide and a second metal oxide which are located on a side of the active layer away from the substrate and are arranged on a same layer; and a source metal and a drain metal which are located on sides of the first metal oxide and the second metal oxide away from the substrate and are arranged in a same layer.
    Type: Application
    Filed: July 23, 2020
    Publication date: July 22, 2021
    Inventors: Qinghe WANG, Tongshang SU, Yongchao HUANG, Yingbin HU, Yang ZHANG, Haitao WANG, Ning LIU, Guangyao LI, Zheng WANG, Yu JI, Jinliang HU, Wei SONG, Jun CHENG, Liangchen YAN
  • Patent number: 11043644
    Abstract: The present disclosure provides a transistor acoustic sensor element and a method for manufacturing the same, an acoustic sensor and a portable device. The transistor acoustic sensor element comprises a gate, a gate insulating layer, a first electrode, an active layer and a second electrode arranged on a base substrate, wherein the active layer has a nanowire three-dimensional mesh structure and thus can vibrate under the action of sound signals, so that the output current of the transistor acoustic sensor element changes correspondingly. Since the active layer having the nanowire three-dimensional mesh structure can sensitively sense weak vibration of acoustic waves, the sensitivity to sound signals of the transistor acoustic sensor element is improved.
    Type: Grant
    Filed: April 10, 2018
    Date of Patent: June 22, 2021
    Assignees: BOE TECHNOLOGY GROUP CO., LTD., HEFEI XINSHENG OPTOELECTRONICS TECHNOLOGY CO., LTD.
    Inventors: Qinghe Wang, Jinliang Hu, Rui Peng, Dongfang Wang, Guangcai Yuan
  • Publication number: 20190067608
    Abstract: The present disclosure provides a transistor acoustic sensor element and a method for manufacturing the same, an acoustic sensor and a portable device. The transistor acoustic sensor element comprises a gate, a gate insulating layer, a first electrode, an active layer and a second electrode arranged on a base substrate, wherein the active layer has a nanowire three-dimensional mesh structure and thus can vibrate under the action of sound signals, so that the output current of the transistor acoustic sensor element changes correspondingly. Since the active layer having the nanowire three-dimensional mesh structure can sensitively sense weak vibration of acoustic waves, the sensitivity to sound signals of the transistor acoustic sensor element is improved.
    Type: Application
    Filed: April 10, 2018
    Publication date: February 28, 2019
    Inventors: Qinghe WANG, Jinliang HU, Rui PENG, Dongfang WANG, Guangcai YUAN