Abstract: The disclosure discloses a method for positioning a mobile terminal, which comprises: a server sends a push notification to a mobile terminal; the mobile terminal performs self-positioning after receiving the push notification, to acquire geographical position information regarding the mobile terminal, and sends the geographical position information to the server; the server receives and displays the geographical position information sent by the mobile terminal. The disclosure also discloses a system for positioning a mobile terminal for implementing the method for positioning a mobile terminal and a mobile terminal. With such method and device, the server can be used to send a push notification to the mobile terminal after a user finds that the mobile terminal is lost. The mobile terminal positions geographical position information thereof and sends the geographical position information to the server to help the user retrieve the mobile terminal.

Abstract: A pretreatment method is provided, which comprises the following steps: (1) wastewater feed is introduced into a first end of a first aeration basin, and is mixed with a first concentrated mixed liquor to obtain a first mixed liquor; (2) the first mixed liquor is aerated in the aeration stage of the first aeration basin to obtain a second mixed liquor at a second end of the first aeration basin; (3) the second mixed liquor is introduced into a first sedimentation basin to obtain a supernatant and the first concentrated mixed liquor; (4) the supernatant is discharged and at least a part of the first concentrated mixed liquor is returned to the first end of the first aeration basin. At the same time, a sewage treatment method using the wastewater pretreatment method is provided. The pretreatment method can be used steadily for a long time without discharging sludge.

Abstract: A sewage treatment apparatus comprises a first stage equipment for treating sewage feed to obtain a first effluent and a second stage equipment for treating the first effluent to obtain a second effluent. The second stage equipment comprises a mixer (VI) for mixing the first effluent and a flocculation agent to obtain the first effluent containing the flocculation agent and a flocculation-clarification equipment (VII) comprises a first flocculation reaction chamber (A), into which the first effluent containing the flocculation agent is entered and subjected to flocculation reaction to form a mixture of water and dreg; a first separation chamber (C), into which the mixture of water and dreg from the first flocculation reaction chamber (A) is entered and separated to obtain a first part of the second effluent and a first dreg; and a second separation chamber (D), into which part of the first dreg is entered and separated to obtain a second part of the second effluent and a second dreg.

Abstract: The present invention provides a method for sludge treatment, comprising the following steps: (1) mixing a sludge feed from a sewage biotreatment process with a first mixed liquor to obtain a second mixed liquor; (2) subjecting the second mixed liquor to an oxygen-supplying process to obtain a third mixed liquor; (3) subjecting the third mixed liquor to an anoxic process to obtain a fourth mixed liquor; (4) separating the fourth mixed liquor to obtain a supernatant liquid and a first concentrated mixed liquor; (5) discharging the supernatant liquid, and returning at least a part of the first concentrated mixed liquor as the first mixed liquor to the step (1), wherein the amount of sludge of the first concentrated mixed liquor that does not return to the step (1) is less than the amount of sludge of the sludge feed. The present invention further relates to the use of the method for sludge treatment in sewage treatment. The method for sludge treatment can achieve a long term stable run without sludge discharge.

Abstract: Fabrication method of GaN power LED with electrodes formed by composite optical coatings, comprising epitaxially growing N—GaN, active, and P—GaN layers successively on a substrate; depositing a mask layer thereon; coating the mask layer with photoresist; etching the mask layer into an N—GaN electrode pattern; etching through that electrode pattern to form an N—GaN electrode region; removing the mask layer and cleaning; forming a transparent, electrically conductive film simultaneously on the P—GaN and N—GaN layers; forming P—GaN and N—GaN transparent, electrically conductive electrodes by lift-off; forming bonding pad pattern for the P—GaN and N—GaN electrodes by photolithography process; simultaneously forming thereon bonding pad regions for the P—GaN and N—GaN electrodes by stepped electron beam evaporation; forming an antireflection film pattern by photolithography process; forming an antireflection film; thinning and polishing the backside of the substrate, then forming a reflector thereon; and completin

Abstract: Fabrication method of GaN power LED with electrodes formed by composite optical coatings, comprising epitaxially growing N—GaN, active, and P—GaN layers successively on a substrate; depositing a mask layer thereon; coating the mask layer with photoresist; etching the mask layer into an N—GaN electrode pattern; etching through that electrode pattern to form an N—GaN electrode region; removing the mask layer and cleaning; forming a transparent, electrically conductive film simultaneously on the P—GaN and N—GaN layers; forming P—GaN and N—GaN transparent, electrically conductive electrodes by lift-off; forming bonding pad pattern for the P—GaN and N—GaN electrodes by photolithography process; simultaneously forming thereon bonding pad regions for the P—GaN and N—GaN electrodes by stepped electron beam evaporation; forming an antireflection film pattern by photolithography process; forming an antireflection film; thinning and polishing the backside of the substrate, then forming a reflector thereon; and completin

Abstract: This invention relates to a method for manufacturing a GaN based LED of a back hole structure, and the method comprises: epitaxially growing an N type GaN layer, a multi-quantum wells emitting active region and a P type GaN layer in turn on an insulation substrate made of sapphire or other materials; etching the N type GaN layer by photoetching, and forming a P type ohmic contact electrode and an N type ohmic contact electrode; scribing the chip to divide the dies on the epitaxial chip into individual die; forming a SiO2 insulation isolation layer on both sides of the silicon chip, forming a metal electrode on a face side, and forming a back hole pattern on a back side; forming a back hole; forming a bump pattern for plating on the face side of the silicon chip by thick resist photoetching; forming a layer of alloy with low melting point on the back side of the silicon chip, thus forming a base; on the back side of the base, directly attaching the base to a heat sink of a housing; bonding the die with the fac

Abstract: This invention relates to a method for manufacturing a GaN based LED of a back hole structure, and the method comprises: epitaxially growing an N type GaN layer, a multi-quantum wells emitting active region and a P type GaN layer in turn on an insulation substrate made of sapphire or other materials; etching the N type GaN layer by photoetching, and forming a P type ohmic contact electrode and an N type ohmic contact electrode; scribing the chip to divide the dies on the epitaxial chip into individual die; forming a SiO2 insulation isolation layer on both sides of the silicon chip, forming a metal electrode on a face side, and forming a back hole pattern on a back side; forming a back hole; forming a bump pattern for plating on the face side of the silicon chip by thick resist photoetching; forming a layer of alloy with low melting point on the back side of the silicon chip, thus forming a base; on the back side of the base, directly attaching the base to a heat sink of a housing; bonding the die with the fac

Abstract: A white LED of a blue and yellow light emitting (structure) layer stacked structure includes a sapphire substrate, or gallium nitride substrate, or silicon carbide substrate, or silicon substrate; a buffer layer formed on the substrate; an N type gallium nitride epitaxial layer formed on the buffer layer; an N doped AlaInbGa1-a-bN quarternary alloy formed on the N type gallium nitride epitaxial layer; a blue light emitting structure layer which contains one or more InxGa1-xN/AlaInbGa1-a-bN quantum well(s) formed on the N type AlaInbGa1-a-bN layer; a yellow light emitting structure layer which contains one or more InyGa1-yN/AlaInbGa1-a-bN quantum well(s) formed on the InxGa1-xN/AlaInbGa1-a-bN quantum well structure; or alternatively, a yellow light emitting structure layer which contains one or more InyGa1-yN/AlaInbGa1-a-bN quantum well(s) being formed on the N type AlaInbGa1-a-bN layer first, and then a blue light emitting structure layer which contains one or more InxGa1-xN/AlaInbGa1-a-bN quantum well(s) bei