Abstract: A speaker and a speaker-box using the same is provided in the present disclosure. The speaker includes a basket and a vibration system. The vibration system includes a diaphragm fixedly connected to the basket. The diaphragm includes a body part and a fixed part bent and extended from the edge of the body part to the basket, the basket includes a side wall encircling the receiving space, the side wall includes an upper surface opposite to the body part and an outer side surface extended from the outer edge of the upper surface, and the upper surface encircles an opening communicated with the receiving space; the body part covers the opening and is fixed with the upper surface, and the fixed part is extended along the outer side surface and fixed with the outer side surface.

Abstract: The disclosure provides a thin film transistor (TFT) and a manufacture method thereof. The TFT includes: a substrate; a gate electrode, formed on the substrate; a gate insulating layer, formed on the gate electrode; a semiconductor layer, formed on the gate insulating layer and corresponding to the gate electrode; a pixel electrode, disposed on the same layer with the semiconductor layer; an ohmic contact layer, formed on the same layer with the semiconductor layer and formed on the same layer with the pixel electrode; a source electrode and a drain electrode, disposed on the ohmic contact layer. According to the TFT and the manufacture method thereof of the exemplary embodiments of the disclosure, the pixel electrode and the semiconductor layer are formed on the same layer, the semiconductor layer and the pixel electrode can be produced by only one mask, which can reduce mask consumption and processes.

Abstract: The present disclosure proposes a TFT array substrate and a method of forming the same. The TFT array substrate includes a substrate, a semi-conductor layer, a pixel electrode on the substrate so to be on the same layer as the semi-conductor layer, a gate insulating layer, a gate electrode, an ILD layer on the substrate so to cover the gate insulating layer, gate electrode and pixel electrode, a source electrode on the ILD layer and connected to the semi-conductor layer, and a drain electrode on the ILD layer and connected to the semi-conductor layer and pixel electrode. The TFT array substrate can prevent etching of the metal oxide by an etching solution. The TFT array substrate having a top-gate structure, including with a traditional TFT with a top-gate structure, can skip the use of photomask at two occasions during the production process, thus lowers the production cost.

Abstract: The present disclosure provides a method of fabricating a TFT substrate. The method includes: forming a gate electrode on a substrate; forming a gate insulating layer on the substrate; forming a semiconductor layer on the gate insulating layer; processing the semiconductor layer for forming an ohmic contact layer; forming a metallic layer on the gate insulating layer; patterning the metallic layer and the ohmic contact layer for forming a source electrode and a drain electrode and for exposing the semiconductor layer located between the source electrode and the drain electrode; forming a passivation layer on the source electrode, the drain electrode, and the exposed semiconductor layer; forming a contact hole in the passivation layer; forming a pixel electrode connected to the drain electrode through the contact hole. The method is effective for forming a positive ohmic contact among the semiconductor layer, the source electrode, and the drain electrode.

Abstract: The present invention provides a low temperature poly-silicon thin-film transistor, as well as a manufacturing method thereof, which includes: a substrate (1), a light shield layer (2) formed on the substrate (1), a pad layer (3) formed on the light shield layer (2), a dielectric layer (4) formed on the pad layer, an active layer (5) formed on the dielectric layer, a gate insulation layer (6) formed on the active layer (5), and a gate layer (7) formed on the gate insulation layer (6). The light shield layer (2) includes a planar section (21) formed on the substrate (1) and a raised section (22) formed on the planar section (21). The active layer (5) has a projection that covers at least a partial area of an upper surface of the raised section (22) and one of sidewalls (224) of the raised section (22).

Abstract: A TFT includes a substrate, a gate, a gate insulating layer, a semiconductor oxide layer, a source/drain layer, a passivation layer, and a transparent conducting layer arranged from bottom to top. An etching block layer is formed after the source/drain layer arranged on the semiconductor oxide layer is etched. A method for forming for the TFT includes: depositing and photo-etching a gate on a substrate; depositing a gate insulating layer on the gate; depositing and photo-etching a semiconductor oxide layer on the gate insulating layer; depositing and photo-etching a source/drain layer on the semiconductor oxide layer; etching the source/drain layer on the semiconductor oxide layer for forming an etching block layer; depositing a passivation layer on the source/drain layer and the semiconductor oxide layer; depositing a transparent conducting layer on the passivation layer.

Abstract: The present disclosure relates to a low temperature poly-silicon thin film transistor and a method of preparing the same. The low temperature poly-silicon thin film transistor includes a substrate, a metal induction layer formed on the substrate, a barrier layer formed on the metal induction layer, and an amorphous silicon film layer formed on the barrier layer, the amorphous silicon film layer being converted into a poly-silicon film layer under the inducing effect of the metal induction layer, and the poly-silicon film layer being an active layer. In the present disclosure, although the active layer is obtained by using the metal induction method, the metal induction layer is provided below the amorphous silicon film layer, and a barrier layer is provided between the metal induction layer and the amorphous silicon film layer.

Abstract: The innovation provides compositions and methods for treating infectious diseases and cancers, wherein said, in vitro, in higher active TDO (tryptophan 2,3-dioxygenase) sick cells that include cancer and infectious cells, tryptophan is capable of transferring into kynurenine derives to induce cells apoptosis; in vivo, tryptophan will turn into indican. Indican is capable of competing phosphorylation in the subject, competitively inhibiting process to form GTP, ATP, dGTP, dATP, that are essential for DNA/RNA synthesis; inhibiting host or invading gene amplification, or interfere with PLK(polo like kinase) phosphorylation to trigger cell apoptosis. All these function can be used for clinic treatment for cancer and infectious diseases.

Abstract: The application relates to controlling access in a software-defined network (SDN). A controller in the SDN receives an access request from an application program. The controller determines whether an operation on a resource as specified in the access request belongs to a permission list corresponding to the application program. The permission list includes a list of permitted operations on the resource by the application program. When the operation as specified in the access request belongs to the permission list, the controller sends a reply message allowing access by the application program. In this way, accesses by the application program are restricted according to the permission list, and malicious attacks from the application program can be prevented to ensure network security.

Abstract: The present disclosure discloses a message attack defense method and apparatus. The method includes: receiving, by a controller, a report message sent by at least one switch; respectively storing, by the controller in a switch queue corresponding to each switch, the received report message that is sent by each switch; and performing, by the controller, round-robin scheduling on the switch queue corresponding to each switch.

Abstract: A method and an apparatus for improving network security. The method includes obtaining, by a control node, alarm information, where the alarm information includes address information of an attack source that attacks a subnet of at least two subnets and identification information of the attacked subnet of the at least two subnets, using, by the control node, the alarm information to sort the attack sources in descending order of threat levels, and using a sorting result as a blacklist, and sending, by the control node, the obtained blacklist to at least one subnet that is not attacked yet in the network system. The method and apparatus are applicable to collaborative defense among multiple subnets.

Abstract: A method and an apparatus for improving network security are provided. The method includes obtaining, by a control node, alarm information, where the alarm information includes address information of an attack source that attacks a subnet of at least two subnets and identification information of the attacked subnet of the at least two subnets, using, by the control node, the alarm information to sort the attack sources in descending order of threat levels, and using a sorting result as a blacklist, and sending, by the control node, the obtained blacklist to at least one subnet that is not attacked yet in the network system. The method and apparatus are applicable to collaborative defense among multiple subnets.

Abstract: A TFT includes a substrate, a gate, a gate insulating layer, a semiconductor oxide layer, a source/drain layer, a passivation layer, and a transparent conducting layer arranged from bottom to top. An etching block layer is formed after the source/drain layer arranged on the semiconductor oxide layer is etched. A method for forming for the TFT includes: depositing and photo-etching a gate on a substrate; depositing a gate insulating layer on the gate; depositing and photo-etching a semiconductor oxide layer on the gate insulating layer; depositing and photo-etching a source/drain layer on the semiconductor oxide layer; etching the source/drain layer on the semiconductor oxide layer for forming an etching block layer; depositing a passivation layer on the source/drain layer and the semiconductor oxide layer; depositing a transparent conducting layer on the passivation layer.

Abstract: A software defined network (SDN) system, controller, and controlling method, where the SDN system includes at least one Nth level controller and at least two (N+1)th level controllers belonging to the Nth level controller, where the (N+1)th level controller is configured to receive a first message sent by a node belonging to the (N+1)th level controller, and when the first message is a cross-domain message according to status information of each node that is managed by the (N+1)th level controller, forward the first message to the Nth level controller to which the (N+1)th level controller belongs, and the Nth level controller receives the first message, and perform decision processing according to status information of the (N+1)th level controller that is managed by and belongs to the Nth level controller and status information of boundary nodes of the (N+1)th level controller belonging to the Nth level controller.

Abstract: The present invention provides a low temperature poly-silicon thin-film transistor, as well as a manufacturing method thereof, which includes: a substrate (1), a light shield layer (2) formed on the substrate (1), a pad layer (3) formed on the light shield layer (2), a dielectric layer (4) formed on the pad layer, an active layer (5) formed on the dielectric layer, a gate insulation layer (6) formed on the active layer (5), and a gate layer (7) formed on the gate insulation layer (6). The light shield layer (2) includes a planar section (21) formed on the substrate (1) and a raised section (22) formed on the planar section (21). The active layer (5) has a projection that covers at least a partial area of an upper surface of the raised section (22) and one of sidewalls (224) of the raised section (22).

Abstract: Embodiments of the present invention provide a data stream security processing method and apparatus. In the embodiments of the present invention, security levels of data streams are determined according to different feature information of the data streams, and forwarding paths corresponding to the data streams are determined according to the security levels, where a forwarding path may go through a security device to implement a corresponding security function of the forwarding path, thereby improving data stream forwarding security and lightening load of a central controller.

Abstract: The present disclosure provides a method, an apparatus, and a system for cooperative defense on a network. Alarm information sent by a security device of a first subnet that is being attacked is received by a controller; the controller generates flow table information according to the alarm information, and forwards the flow table information to a switching device of the first subnet and a switching device of at least one second subnet, which is equivalent to that, after detecting an attack, a security device of a subnet generates alarm information, and shares, by using the controller, the alarm information with a switching device of the subnet and a switching device of another subnet that is not being attacked, to form networkwide cooperative defense, thereby enhancing network security.

Abstract: Conflict detection and resolution methods and apparatuses relate to the field of communications technologies. The conflict detection method includes: acquiring, by a controller, a flow path of a data flow on a network, where the flow path is used to indicate a path along which the data flow reaches an address in a destination address range from an address in a source address range through at least two intermediate nodes on the network, a first flow table rule is added to or deleted from flow tables of the at least two intermediate nodes, and the first flow table rule is any flow table rule; and determining, by the controller, whether a conflict exists according to an address range of the flow path and an address range of a security policy.

Abstract: A method and an apparatus for improving network security are provided. The method includes obtaining, by a control node, alarm information, where the alarm information includes address information of an attack source that attacks a subnet of at least two subnets and identification information of the attacked subnet of the at least two subnets, using, by the control node, the alarm information to sort the attack sources in descending order of threat levels, and using a sorting result as a blacklist, and sending, by the control node, the obtained blacklist to at least one subnet that is not attacked yet in the network system. The method and apparatus are applicable to collaborative defense among multiple subnets.

Abstract: Embodiments of the present invention provide a data stream security processing method and apparatus. In the embodiments of the present invention, security levels of data streams are determined according to different feature information of the data streams, and forwarding paths corresponding to the data streams are determined according to the security levels, where a forwarding path may go through a security device to implement a corresponding security function of the forwarding path, thereby improving data stream forwarding security and lightening load of a central controller.