Abstract: Disclosed are a preparation method for high-performance lithium iron phosphate and use thereof. The method comprises the following steps: dispersing a lithium salt into a solvent A, and adding an organic acid to adjust the pH to obtain a mixed solution; dispersing porous iron phosphate into a solvent B, and adding an organic carbon source to obtain a mixed slurry A; adding the mixed slurry A into the mixed solution; grinding the obtained slurry; adding a dispersing agent into the grinding material for stirring and dispersing to obtain a mixed slurry B; placing the mixed slurry B under the pressure of 100-1000 Pa for aging and drying; and sintering the obtained dry material in an inert atmosphere to obtain lithium iron phosphate.

Abstract: A semiconductor device includes a type IV semiconductor base substrate, a first type III-V semiconductor layer formed on a first surface of the base substrate, and a second type III-V semiconductor layer with a different bandgap as the first type III-V being formed on the first type III-V semiconductor layer. The semiconductor device further includes first and second electrically conductive device terminals each being formed on the second type III-V semiconductor layer and each being in ohmic contact with the two-dimensional charge carrier gas. The base substrate includes a dielectric layer formed directly on a lower region of type IV semiconductor material, and a highly-doped layer of type IV semiconductor material formed directly on the dielectric layer.

Abstract: A semiconductor device includes a type IV semiconductor base substrate, a first type III-V semiconductor layer formed on a first surface of the base substrate, and a second type III-V semiconductor layer with a different bandgap as the first type III-V being formed on the first type III-V semiconductor layer. The semiconductor device further includes first and second electrically conductive device terminals each being formed on the second type III-V semiconductor layer and each being in ohmic contact with the two-dimensional charge carrier gas. The base substrate includes a first highly doped island that is disposed directly beneath the second device terminal and extends to the first surface of the base substrate. The first highly-doped island is laterally disposed between portions of semiconductor material having a lower net doping concentration than the first highly-doped island.

Abstract: A drain pump for an appliance includes a single, self-starting, single-phase synchronous motor and a pump chamber having an inlet and first and second outlets. The first outlet is a drain outlet and the second outlet is a recirculation outlet. An impeller is disposed within the pump chamber and is selectively and bi-directionally driven by the single-phase synchronous motor. Rotation of the impeller in a first direction directs fluid from the inlet toward the drain outlet and away from the recirculation outlet. Rotation of the impeller in the second direction directs the fluid from the inlet toward the recirculation outlet and away from the drain outlet.

Abstract: A semiconductor device includes a type IV semiconductor base substrate, a first type III-V semiconductor layer formed on a first surface of the base substrate, and a second type III-V semiconductor layer with a different bandgap as the first type III-V being formed on the first type III-V semiconductor layer. The semiconductor device further includes first and second electrically conductive device terminals each being formed on the second type III-V semiconductor layer and each being in ohmic contact with the two-dimensional charge carrier gas. The base substrate includes a first highly doped island that is disposed directly beneath the second device terminal and extends to the first surface of the base substrate. The first highly-doped island is laterally disposed between portions of semiconductor material having a lower net doping concentration than the first highly-doped island.

Abstract: A drain pump for an appliance includes a single, self-starting, single-phase synchronous motor and a pump chamber having an inlet and first and second outlets. The first outlet is a drain outlet and the second outlet is a recirculation outlet. An impeller is disposed within the pump chamber and is selectively and bi-directionally driven by the single-phase synchronous motor. Rotation of the impeller in a first direction directs fluid from the inlet toward the drain outlet and away from the recirculation outlet. Rotation of the impeller in the second direction directs the fluid from the inlet toward the recirculation outlet and away from the drain outlet.