Patents by Inventor Jinmoo BYUN

Jinmoo BYUN has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11300883
    Abstract: A method to determine a patterning process parameter, the method comprising: for a target, calculating a first value for an intermediate parameter from data obtained by illuminating the target with radiation comprising a central wavelength; for the target, calculating a second value for the intermediate parameter from data obtained by illuminating the target with radiation comprising two different central wavelengths; and calculating a combined measurement for the patterning process parameter based on the first and second values for the intermediate parameter.
    Type: Grant
    Filed: September 19, 2018
    Date of Patent: April 12, 2022
    Assignee: ASML Netherlands B.V.
    Inventors: Martin Jacobus Johan Jak, Simon Gijsbert Josephus Mathijssen, Kaustuve Bhattacharyya, Won-Jae Jang, Jinmoo Byun
  • Patent number: 10908513
    Abstract: Disclosed are a method, computer program and a metrology apparatus for measuring a process effect parameter relating to a manufacturing process for manufacturing integrated circuits on a substrate. The method comprises determining for a structure, a first quality metric value for a quality metric from a plurality of measurement values each relating to a different measurement condition while cancelling or mitigating for the effect of the process effect parameter on the plurality of measurement values and a second quality metric value for the quality metric from at least one measurement value relating to at least one measurement condition without cancelling or mitigating for the effect of the process effect parameter on the at least one measurement value. The process effect parameter value for the process effect parameter can then be calculated from the first quality metric value and the second quality metric value, for example by calculating their difference.
    Type: Grant
    Filed: July 3, 2018
    Date of Patent: February 2, 2021
    Assignee: ASML Netherlands B.V.
    Inventors: Marc Johannes Noot, Simon Gijsbert Josephus Mathijssen, Kaustuve Bhattacharyya, Jinmoo Byun, Hyun-Su Kim, Won-Jae Jang, Timothy Dugan Davis
  • Publication number: 20190094703
    Abstract: A method to determine a patterning process parameter, the method comprising: for a target, calculating a first value for an intermediate parameter from data obtained by illuminating the target with radiation comprising a central wavelength; for the target, calculating a second value for the intermediate parameter from data obtained by illuminating the target with radiation comprising two different central wavelengths; and calculating a combined measurement for the patterning process parameter based on the first and second values for the intermediate parameter.
    Type: Application
    Filed: September 19, 2018
    Publication date: March 28, 2019
    Applicant: ASML Netherlands B.V.
    Inventors: Martin Jacobus Johan JAK, Simon Gijsbert Josephus MATHIJSSEN, Kaustuve BHATTACHARYYA, Won-Jae JANG, Jinmoo BYUN
  • Publication number: 20190033727
    Abstract: Disclosed are a method, computer program and a metrology apparatus for measuring a process effect parameter relating to a manufacturing process for manufacturing integrated circuits on a substrate. The method comprises determining for a structure, a first quality metric value for a quality metric from a plurality of measurement values each relating to a different measurement condition while cancelling or mitigating for the effect of the process effect parameter on the plurality of measurement values and a second quality metric value for the quality metric from at least one measurement value relating to at least one measurement condition without cancelling or mitigating for the effect of the process effect parameter on the at least one measurement value. The process effect parameter value for the process effect parameter can then be calculated from the first quality metric value and the second quality metric value, for example by calculating their difference.
    Type: Application
    Filed: July 3, 2018
    Publication date: January 31, 2019
    Applicant: ASML Netherlands B.V.
    Inventors: Marc Johannes NOOT, Simon Gijsbert Josephus MATHIJSSEN, Kaustuve BHATTACHARYYA, Jinmoo BYUN, Hyun-Su KIM, Won-Jae JANG, Timothy Dugan DAVIS