Abstract: The present invention relates to a hydrophilic metal thin film, which is formed by stacking a plurality of columnar structures. A plurality of tetrahedral structures is on the surface of the hydrophilic metal film, which is formed on the top of the columnar structures. The width of the tetrahedral structures is 15 nm to 120 nm. The hydrophilic metal thin film comprises: 35 to 95 at % of iron, 5 to 20 at % of chromium. The above-mentioned hydrophilic metal thin film is formed by magnetron sputtering method under the working pressure of argon gas ranging from 6 mTorr to 13 mTorr, and the sputtering time exceeds 20 minutes.

Abstract: The present invention relates to a hydrophilic metal thin film, which is formed by stacking a plurality of columnar structures. A plurality of tetrahedral structures is on the surface of the hydrophilic metal film, which is formed on the top of the columnar structures. The width of the tetrahedral structures is 15 nm to 120 nm. The hydrophilic metal thin film comprises: 35 to 95 at % of iron, 5 to 20 at % of chromium. The above-mentioned hydrophilic metal thin film is formed by magnetron sputtering method under the working pressure of argon gas ranging from 6 mTorr to 13 mTorr, and the sputtering time exceeds 20 minutes.

Abstract: A tattoo needle structure is provided. A tattoo needle has a plurality of needle tips, an ink holding space is formed by the arrangement of the needle tips, and a multi-component alloy film is deposited on each needle tip of the tattoo needle by sputtering technology, so that when the tattoo needle is dipped into the tattoo ink, the tattoo ink does not stick to the surface of the multi-component alloy film by the hydrophobic property of the multi-component alloy film, and the tattoo ink is contained in the ink holding space by the cohesive property of the tattoo ink. Thus, when the tattoo needle is dipped into the tattoo ink and the tattoo process is performed, the dyeing area of the skin with the tattoo ink is the cross-sectional area of the ink holding space, thereby achieving the technical effect of improving the contouring resolution of a tattoo.

Abstract: A tattoo needle structure is provided. A tattoo needle has a plurality of needle tips, an ink holding space is formed by the arrangement of the needle tips, and a multi-component alloy film is deposited on each needle tip of the tattoo needle by sputtering technology, so that when the tattoo needle is dipped into the tattoo ink, the tattoo ink does not stick to the surface of the multi-component alloy film by the hydrophobic property of the multi-component alloy film, and the tattoo ink is contained in the ink holding space by the cohesive property of the tattoo ink. Thus, when the tattoo needle is dipped into the tattoo ink and the tattoo process is performed, the dyeing area of the skin with the tattoo ink is the cross-sectional area of the ink holding space, thereby achieving the technical effect of improving the contouring resolution of a tattoo.

Abstract: An ultraviolet sensor comprises a glass substrate, a semiconductor structure, an electrode layer and a thin film metallic glass. The semiconductor structure comprises a semiconductor seed layer formed on the glass substrate and a plurality of semiconductor nanostructures formed on the semiconductor seed layer. The electrode layer is formed between the semiconductor seed layer and the plurality of semiconductor nanostructures. The thin film metallic glass is in contact with the semiconductor structure, wherein an interface between the thin film metallic glass and the semiconductor structure forms a Schottky barrier junction to inhibit dark current and increase signal-to-noise ratio.

Abstract: A thin film metallic glass coated needle includes a needle body, a needle head and a thin film metallic glass in amorphous structure and formed on a surface of the needle head and a surface of the needle body to reduce a surface energy and coefficient of friction. The thin film metallic glass is a titanium based comprising 35-45 at % titanium, 5-15 at % zirconium, 32-42 at % copper, 1-11 at % niobium and 2-12 at % cobalt.

Abstract: The present disclosure provides a thermoelectric structure including a thermoelectric substrate and a barrier layer covering the thermoelectric substrate. A material of the barrier layer is metallic glass. The thermoelectric structure of the present disclosure may apply to a medium-temperature (about 400K to about 800K) thermoelectric module to effectively block the diffusion of the thermoelectric substrate.

Abstract: A thin film metallic glass coated needle includes a needle body, a needle head and a thin film metallic glass in amorphous structure and formed on a surface of the needle head and a surface of the needle body to reduce a surface energy and coefficient of friction. The thin film metallic glass is a titanium based comprising 35-45 at % titanium, 5-15 at % zirconium, 32-42 at % copper, 1-11 at % niobium and 2-12 at % cobalt.

Abstract: The present invention relates to a tin whisker mitigation material using thin film metallic glass underlayer, which is a thin film metallic glass (TFMG) formed between a metal substrate and a tin layer. Particularly, the TFMG can be a Zr46Ti26Ni28 underlayer or a Zr51.7Cu32.3Al9Ni underlayer, capable of blocking off the interaction occurring in the interface of a copper layer (the metal substrate) and the tin layer, so as to carry out the inhibition of tin whisker growth. Moreover, a variety of experiment data are proposed for proving that the TFMG of the Zr46Ti26Ni28 or the Zr51.7Cu32.3Al9Ni can indeed be used to replace the conventionally used thick tin layer for being the underlayer between the copper layer (the metal substrate) and the tin layer, and then effectively inhibit the interaction occurring in the Cu/Sn interface and the growth of tin whisker by low manufacturing cost way.

Abstract: The present invention relates to a resistive random access memory using amorphous metallic glass oxide as a storage medium, comprising a substrate, an insulation layer, a first electrode layer, a resistive memory layer, and a second electrode layer. In the present invention, an amorphous metallic glass oxide layer is mainly used as the resistive memory layer of the resistive random access memory. Therefore, the resistive random access memory with storage medium of amorphous metallic glass oxide thin film having advantages of low operation voltage, low power consumption, and high set/reset resistance ratio are provided without using any thermal annealing processes or forming processes.

Abstract: The present invention relates to a metallic glass film for medical application, which is an amorphous thin film metallic glass (TFMG) formed for covering the surface of a substrate (for example, a medical cutting instrument), so as to increase the wear resistance and the sharpness of the substrate, decrease the surface roughness of the substrate, protect the edge of the substrate from curl and chipping crack. In the present invention, the TFMG is a zirconium-based thin film metallic glass constituted by Zr material, Cu material, Al material, and Ta material with the atom percent of 53 at %, 33 at %, 9 at %, 5 at %, respectively. Moreover, the TFMG can also be constituted by Cu material, Zr material, Al material, and Ti material, and the atom percent of the Cu material, the Zr material, the Al material, and the Ti material are 48 at %, 42 at %, 6 at %, 4 at %, respectively.

Abstract: The present invention relates to a tin whisker mitigation material using thin film metallic glass underlayer, which is a thin film metallic glass (TFMG) formed between a metal substrate and a tin layer. Particularly, the TFMG can be a Zr46Ti26Ni28 underlayer or a Zr51.7Cu32.3Al9Ni underlayer, capable of blocking off the interaction occurring in the interface of a copper layer (the metal substrate) and the tin layer, so as to carry out the inhibition of tin whisker growth. Moreover, a variety of experiment data are proposed for proving that the TFMG of the Zr46Ti26Ni28 or the Zr51.7Cu32.3Al9Ni can indeed be used to replace the conventionally used thick tin layer for being the underlayer between the copper layer (the metal substrate) and the tin layer, and then effectively inhibit the interaction occurring in the Cu/Sn interface and the growth of tin whisker by low manufacturing cost way.

Abstract: The present invention relates to a resistive random access memory using amorphous metallic glass oxide as a storage medium, comprising a substrate, an insulation layer, a first electrode layer, a resistive memory layer, and a second electrode layer. In the present invention, an amorphous metallic glass oxide layer is mainly used as the resistive memory layer of the resistive random access memory. Therefore, the resistive random access memory with storage medium of amorphous metallic glass oxide thin film having advantages of low operation voltage, low power consumption, and high set/reset resistance ratio are provided without using any thermal annealing processes or forming processes.

Abstract: The present invention relates to a resistive random access memory using the rare earth scandate thin film as the storage medium, comprising a substrate, an insulation layer, a first electrode layer, a resistive memory layer, and a second electrode layer. In the present invention, it uses an amorphous rare earth scandate layer as the resistive memory layer of the resistive random access memory. Therefore, the resistive random access memory using the rare earth scandate thin film as the storage medium having advantages of low operation voltage and low power consumption can easily be manufactured without using any forming process or thermal annealing process. Moreover, through the characteristics of unipolar resistance switching behavior revealed by the amorphous rare earth scandate layer, the resistive random access memory using rare earth scandate thin film as the storage medium is able to perform a high resistance state and a low resistance state.

Abstract: A composite substrate including an amorphous metallic substrate and a metallic glass layer is provided. The metallic glass layer is deposited on the amorphous metallic substrate. The composite substrate adopts the metallic glass layer for the amorphous metallic substrate to have ductility and improving a problem of room-temperature brittleness of the amorphous metallic substrate so as to raise the application value of the amorphous metallic substrate.

Abstract: An electrically conductive material includes: a supersaturated solid solution of a polycrystalline copper alloy having a composition represented by the formula: Cu100-x-yMxNy; wherein x and y are atomic ratios; wherein 0<x?2.0 and 0?y?2.0; wherein M is selected from Ru, Re, Ho, and combinations thereof; and wherein the supersaturated solid solution includes M precipitates formed at grain boundaries of the polycrystalline copper alloy when y is equal to zero, and includes M precipitates and MN particles formed at the grain boundaries of the polycrystalline copper alloy when y is not zero.

Abstract: A copper film containing tungsten nitride is manufactured by co-sputtering method under an Ar/N2 atmosphere and has a composition in ratio of tungsten nitride contained in the copper layer in atomic ratios of more than 97.5% in copper, 0.5 to 1.5% in tungsten and of less than 2.0% in nitrogen. By adding the tungsten nitride, the copper film has improvements in thermal stability, good electrical conductivity and low electrical leakage current. Moreover, the copper film attached on a silicon substrate will generate a self-passivated silicon compound layer to serve as a diffusion barrier layer between the copper film and the silicon substrate during annealing.

Abstract: A copper film containing tungsten carbide is adapted to be formed on a substrate and contains a copper layer having tungsten carbide in atomic ratios of 0.4 to 12.2% in tungsten and of 0.7 to 7.4% in carbon. To achieve the copper film, a manufacturing method has the acts of: adjusting a non-overlapping area between a copper target and a tungsten carbide target; co-sputtering the copper target and the tungsten carbide target to form the copper film containing tungsten carbide; and optionally annealing the copper film containing tungsten carbide to change the microstructure of the copper film. By sputtering the tungsten carbide with copper, the achieved copper film has excellent electrical conductivity, thermal stability at high temperatures and hardness properties.

Abstract: An thin film alloy based on chemical elements with high glass forming ability is disclosed. The alloy is deposited as a thin film from a source of substantially the same chemical composition. Within the deposited thin film, amorphization is induced extensively up to decades of micrometers in size during controlled annealing. Such controllable extensive amorphization throughout the thin film is useful to regulate the proportion of amorphous phase to crystalline phase, establish the structure/property relationships and thus tailor specific properties.

Abstract: The present invention relates to biologically active material, containing mainly polysaccharides, from the solution culturing for mycelium of Antrodia camphorata, a kind of mushroom that only grows inside a unique Taiwanese plant called Cinnamomum kanehirae tree, being able to improve immunity and resist tumors and parasites, and the preparation and compositions for the said active material.