Abstract: A window member includes a main part including a first side extending in a first direction, a second side extending in a second direction, and a first corner side connecting the first and second sides. The window member further includes a first side part in contact with the first side, a second side part in contact with the second side, and a first corner part connecting the first and second side parts. The first corner part includes a first upper corner part, a first middle corner part, and a first lower corner part. A lower surface of the first middle corner part has a first radius of curvature, a lower surface of the first lower corner part has a second radius of curvature, and the first radius of curvature is greater than the second radius of curvature.

Abstract: Disclosed are a synthetic antiferromagnetic material using the Ruderman-Kittel-Kasuya-Yosida (RKKY) interaction and a multibit memory using the synthetic antiferromagnetic material that is formed. The synthetic antiferromagnetic material has a non-magnetic metal layer as an RKKY inducing layer in the center, interaction between upper and lower ferromagnetic layers is imparted according to the thickness of the RKKY inducing layer, and the magnetization of an anti-parallel state is maximized therebetween. When such synthetic antiferromagnetic materials are cumulatively stacked and tunnel barrier layers are provided therebetween, multiple bits can be stored. Namely, data may be stored by supplying a program current in parallel to the surface of the RKKY inducing layer, and a resistance state may be checked by supplying current in a vertical direction to the surface of the RKKY inducing layer.

Abstract: A spin-orbit-torque (SOT)-based magnetic sensor is provided. The magnetic sensor includes a substrate, an electrode layer formed on the substrate, and a pair of first and second sensing elements stacked on the substrate so as to be connected to the electrode layer, wherein directions of respective currents flowing through the first and second sensing elements via the electrode layer are opposite to each other.

Abstract: Disclosed is a selective device having high selectivity and temperature stability. The selective device has a doped insulating layer. The doped insulating layer has a metal oxide and a chalcogen element introduced into the metal oxide. Metal oxide has amorphous structure with minimized defects, and the introduced chalcogen elements form a conductive channel at a specific voltage and realize bi-directional switching characteristics.

Abstract: Disclosed is logic device using spin orbit torque. Two magnetic tunnel junctions have mutually opposite magnetization directions. The direction of the current flowing through the non-magnetic metal layer acts as an input, and the resistance states of the magnetic tunnel junctions are determined by the input program currents. Various logic devices are implemented by a method of setting the input program current to a logic high or a logic low.

Abstract: A magnetic tunnel junction device and an operating method thereof are disclosed. The magnetization switching of a free layer may be induced through spin orbit torque or spin transfer torque, and a magnetization direction of a pinned layer may be easily set according to the intention of a designer through ferromagnetic coupling and antiferromagnetic coupling.

Abstract: Disclosed is a method of fabricating a resistive switching memory. A method of fabricating a resistive switching memory according to an embodiment of the present invention includes a step of forming a lower electrode on a substrate; a step of forming a resistive switching layer on the lower electrode using sputtering; and a step of forming an upper electrode on the resistive switching layer, wherein, in the step of forming a resistive switching layer on the lower electrode using sputtering, the substrate is disposed in a region, which is not reached by plasma generated by the first and second targets, between the first target and the second target disposed above the substrate to deposit the resistive switching layer.

Abstract: Disclosed are a synthetic antiferromagnetic material using the Ruderman-Kittel-Kasuya-Yosida (RKKY) interaction and a multibit memory using the synthetic antiferromagnetic material that is formed. The synthetic antiferromagnetic material has a non-magnetic metal layer as an RKKY inducing layer in the center, interaction between upper and lower ferromagnetic layers is imparted according to the thickness of the RKKY inducing layer, and the magnetization of an anti-parallel state is maximized therebetween. When such synthetic antiferromagnetic materials are cumulatively stacked and tunnel barrier layers are provided therebetween, multiple bits can be stored. Namely, data may be stored by supplying a program current in parallel to the surface of the RKKY inducing layer, and a resistance state may be checked by supplying current in a vertical direction to the surface of the RKKY inducing layer.

Abstract: A selection device and a crosspoint memory including the same are provided. The selection device has a lower electrode. A polycrystalline metal oxide layer including insulating crystal grains and a conductive nanochannel formed in a grain boundary between the crystal grains is disposed on the lower electrode. An upper electrode is disposed on the polycrystalline metal oxide layer.

Abstract: Disclosed is an operation method of a neural network element using a Hall voltage. The neural network element has a hole pattern portion, and the hole pattern portion has a cross shape. When a pulse current is applied, horizontal magnetic anisotropy is formed in a ferromagnetic layer by means of spin-orbit torque, and when an external magnetic field in a direction perpendicular to the pulse current is applied, the inversion of magnetization occurs by means of additional torque. The movement of a magnetic domain wall is performed by the inversion of magnetization, spin electrons applied thereby are scattered, and a Hall voltage is generated according to the anomalous Hall effect. The generated Hall voltage increases according to the number of applications of the pulse current or pulse voltage.

Abstract: Disclosed are a switching atomic transistor with a diffusion barrier layer and a method of operating the same. By introducing a diffusion barrier layer in an intermediate layer having a resistance change characteristic, it is possible to minimize variation in the entire number of ions in the intermediate layer involved in operation of the switching atomic transistor or to eliminate the variation to maintain stable operation of the switching atomic transistor. In addition, it is possible to stably implement a multi-level cell of a switching atomic transistor capable of storing more information without increasing the number of memory cells. Also, disclosed are a vertical atomic transistor with a diffusion barrier layer and a method of operating the same. By producing an ion channel layer in a vertical structure, it is possible to significantly increase transistor integration.

Abstract: Disclosed is a method of fabricating a resistive switching memory. A method of fabricating a resistive switching memory according to an embodiment of the present invention includes a step of forming a lower electrode on a substrate; a step of forming a resistive switching layer on the lower electrode using sputtering; and a step of forming an upper electrode on the resistive switching layer, wherein, in the step of forming a resistive switching layer on the lower electrode using sputtering, the substrate is disposed in a region, which is not reached by plasma generated by the first and second targets, between the first target and the second target disposed above the substrate to deposit the resistive switching layer.

Abstract: A three-axis magnetic sensor which is not physically separated from each other and made of one element is provided. A spin-orbit torque is generated through an interface junction between a magnetization seed layer and a magnetization free layer, and through this, a change in an in-plane magnetic field may be sensed in the form of current or voltage in the magnetization seed layer. Further, a tunneling insulating layer and a magnetization pinned layer are formed on the magnetization free layer. The formed structure induces a tunnel magneto-resistance phenomenon. Through this, a change in a magnetic field in a vertical direction is sensed.

Abstract: Disclosed are a system and a method for automatic diagnosis of a power generation facility, and a system for automatic diagnosis of a power generation facility which include a data measuring unit for acquiring vibration data from a rotating body of a power facility, a signal processing unit for signal-processing acquired vibration data, and extracting and quantifying predetermined characteristic factors with respect to a time domain, a frequency domain, and a shape area, a characteristic pattern storage unit for storing a characteristic factor pattern classified for each failure type, and a failure diagnosis unit for diagnosing whether a power facility to be diagnosed has a failure and a failure type of the power facility, on the basis of a classified characteristic factor pattern.

Abstract: Disclosed are a switching atomic transistor with a diffusion barrier layer and a method of operating the same. By introducing a diffusion barrier layer in an intermediate layer having a resistance change characteristic, it is possible to minimize variation in the entire number of ions in the intermediate layer involved in operation of the switching atomic transistor or to eliminate the variation to maintain stable operation of the switching atomic transistor. In addition, it is possible to stably implement a multi-level cell of a switching atomic transistor capable of storing more information without increasing the number of memory cells. Also, disclosed are a vertical atomic transistor with a diffusion barrier layer and a method of operating the same. By producing an ion channel layer in a vertical structure, it is possible to significantly increase transistor integration.

Abstract: Disclosed are a switching atomic transistor with a diffusion barrier layer and a method of operating the same. By introducing a diffusion barrier layer in an intermediate layer having a resistance change characteristic, it is possible to minimize variation in the entire number of ions in the intermediate layer involved in operation of the switching atomic transistor or to eliminate the variation to maintain stable operation of the switching atomic transistor. In addition, it is possible to stably implement a multi-level cell of a switching atomic transistor capable of storing more information without increasing the number of memory cells. Also, disclosed are a vertical atomic transistor with a diffusion barrier layer and a method of operating the same. By producing an ion channel layer in a vertical structure, it is possible to significantly increase transistor integration.

Abstract: A structure and operation method of a spin device using a magnetic domain wall movement by spin orbit torque are provided. It is possible to invert the magnetization of free layer of the device at a low value of current by using the spin orbital torque, and the structure of the device is simpler than that of the conventional CMOS. Further, a spin synapse device to which a free layer of multiaxial anisotropy is applied in addition to movement of a magnetic domain wall is provided. Since the magnetoresistance can be adjusted according to the angle of the pinned layer and the free layer, it is easy to apply multi-bit and it can be applied to artificial synapse technology.

Abstract: An MTJ structure having vertical magnetic anisotropy is provided. The MTJ structure having vertical magnetic anisotropy can comprise: a substrate; an artificial antiferromagnetic layer located on the substrate; a buffer layer located on the artificial antiferromagnetic layer, and including W or an alloy containing W; a first ferromagnetic layer located on the buffer layer, and having vertical magnetic anisotropy; a tunneling barrier layer located on the first ferromagnetic layer; and a second ferromagnetic layer located on the tunneling barrier layer, and having vertical magnetic anisotropy. Accordingly, in the application of bonding the artificial antiferromagnetic layer with a CoFeB/MgO/CoFeB structure, the MTJ structure having improved thermal stability at high temperature can be provided by using the buffer layer therebetween.

Abstract: A structure and operation method of a spin device using a magnetic domain wall movement by spin orbit torque are provided. It is possible to invert the magnetization of free layer of the device at a low value of current by using the spin orbital torque, and the structure of the device is simpler than that of the conventional CMOS. Further, a spin synapse device to which a free layer of multiaxial anisotropy is applied in addition to movement of a magnetic domain wall is provided. Since the magnetoresistance can be adjusted according to the angle of the pinned layer and the free layer, it is easy to apply multi-bit and it can be applied to artificial synapse technology.

Abstract: There are provided an ice thermal storage tank having excellent cold water generation efficiency and having a considerably reduced size, and a water cooler having the same. The ice thermal storage tank includes: a tank body accommodating an ice storage liquid cooled according to an ice thermal storage scheme; a cold water generation unit heat-exchanging introduced water with the cooled ice storage liquid to generate cold water; and a circulation unit extracting the ice storage liquid accommodated in the tank body to circulate it within the tank body. The water cooler includes: the thermal storage tank cooling water supplied from the outside; and a water dispensing unit dispensing cooled water from the ice thermal storage tank. Since an ice storage liquid is circulated without using a stirrer, the size of an ice thermal storage tank can be remarkably reduced, and thus, a water cooler is reduced in size.