Abstract: The invention provides a flexible TFT substrate and manufacturing method thereof. The method forms a flexible base and a first organic layer on rigid substrate and forms a plurality of grooves, manufactures TFT devices in the grooves and forms a second organic layer on the first organic layer, finally peels the flexible base from the rigid substrate to obtain a flexible TFT substrate, wherein because a plurality of grooves is disposed in the first organic layer, a plurality of recessed structures and raised structures are formed on the first organic layer so that the second organic layer and the first organic layer are engaged with each other and bonded tightly, and protects the TFT devices sandwiched between the two to prevent the breaking wires, TFT peeling, and leaking light in the bending process, to enhance the flexible TFT substrate quality to prolong the lifespan of flexible TFT substrate.

Abstract: The invention provides a flexible TFT substrate and manufacturing method thereof. The method forms a flexible base and a first organic layer on rigid substrate and forms a plurality of grooves, manufactures TFT devices in the grooves and forms a second organic layer on the first organic layer, finally peels the flexible base from the rigid substrate to obtain a flexible TFT substrate, wherein because a plurality of grooves is disposed in the first organic layer, a plurality of recessed structures and raised structures are formed on the first organic layer so that the second organic layer and the first organic layer are engaged with each other and bonded tightly, and protects the TFT devices sandwiched between the two to prevent the breaking wires, TFT peeling, and leaking light in the bending process, to enhance the flexible TFT substrate quality to prolong the lifespan of flexible TFT substrate.

Abstract: The invention provides a flexible TFT substrate and manufacturing method thereof. The method forms a flexible base and a first organic layer on rigid substrate and forms a plurality of grooves, manufactures TFT devices in the grooves and forms a second organic layer on the first organic layer, finally peels the flexible base from the rigid substrate to obtain a flexible TFT substrate, wherein because a plurality of grooves is disposed in the first organic layer, a plurality of recessed structures and raised structures are formed on the first organic layer so that the second organic layer and the first organic layer are engaged with each other and bonded tightly, and protects the TFT devices sandwiched between the two to prevent the breaking wires, TFT peeling, and leaking light in the bending process, to enhance the flexible TFT substrate quality to prolong the lifespan of flexible TFT substrate.

Abstract: The invention provides a flexible TFT substrate and manufacturing method thereof. The method forms a flexible base and a first organic layer on rigid substrate and forms a plurality of grooves, manufactures TFT devices in the grooves and forms a second organic layer on the first organic layer, finally peels the flexible base from the rigid substrate to obtain a flexible TFT substrate, wherein because a plurality of grooves is disposed in the first organic layer, a plurality of recessed structures and raised structures are formed on the first organic layer so that the second organic layer and the first organic layer are engaged with each other and bonded tightly, and protects the TFT devices sandwiched between the two to prevent the breaking wires, TFT peeling, and leaking light in the bending process, to enhance the flexible TFT substrate quality to prolong the lifespan of flexible TFT substrate.

Abstract: A thin film transistor, a manufacture method of a thin film transistor and a CMOS device are provided. The thin film transistor includes: a substrate and a low temperature poly-silicon (LTPS) layer disposed on the same side of the substrate, a first and a second light doped zones disposed adjacently to two opposite ends of the LTPS on the same layer with the LTPS, a first heavy doped zone disposed on the same layer with the LTPS, the first heavy doped zone is disposed adjacently to an end of the first light doped zone away from the LTPS, the second heavy doped zone is disposed adjacently to an end of the second light doped zone away from the LTPS, the first insulating layer, covering the first and the second light doped zones as well as the first and the second heavy doped zones.

Abstract: In an apparatus using optically excited atomic media, such as an atomic frequency standard, a source providing a controlled emission of light for exciting the D1 and/or D2 resonance lines of an alkali gas, such as rubidium or cesium, is controlled by an output generated by digital electronics from the light intensity signal of a light sensor for light transmitted by the alkali gas, an output for representing ambient temperature, and a light intensity-ambient temperature algorithm to substantially eliminate changes in light intensity due to light source aging for the purpose of reducing changes in temperature sensitivity of the apparatus as a function of time and the light-shift contribution to the frequency aging of the standard.

Abstract: In an apparatus using optically excited atomic media, such as an atomic frequency standard, a source providing a controlled emission of light for exciting the D1 and/or D2 resonance lines of an alkali gas, such as rubidium or cesium, is controlled by an output generated by digital electronics from the light intensity signal of a light sensor for light transmitted by the alkali gas, an output for representing ambient temperature, and a light intensity-ambient temperature algorithm to substantially eliminate changes in light intensity due to light source aging for the purpose of reducing changes in temperature sensitivity of the apparatus as a function of time and the light-shift contribution to the frequency aging of the standard.

Abstract: A quantum medium is excited by laser light from a first electromagnetic source and is also exposed to radiation from a second electromagnetic source such that the radiation field from this second source is non-uniform in a direction transverse to the direction of passage of laser light though the quantum medium. The laser light that has passed through the quantum medium is detected by two photo detectors at two different locations transverse to the passage of laser light, with the light detected by each photo detector having passed through a substantially different region of the quantum medium than the light detected by the other photo detector, and with the radiation field from the second electromagnetic source having different intensities in these two regions. The different radiation field intensities in these two regions produce at each photo detector different intensity levels of the laser light that varies with the frequency of the second source of electromagnetic radiation.

Abstract: An extremely small and inexpensively manufactured physics package for an atomic frequency standard can be provided with a microwave cavity having non-critical dimensions that is driven in a substantially TEM mode by a lumped LC means, the cavity resonant frequency being primarily determined by the lumped LC means. The lumped LC means can be any structure or combination of elements providing, at a selected microwave reference frequency, a resonant inductance and capacitance. Examples of such lumped LC means include, preferably, a rod or wire conductively attached to a wall of the microwave cavity as a lumped inductance and extending into the cavity to form, at its other end, a gap with an opposing cavity wall as a lumped capacitance; or a pair of rods or wires conductively attached to opposing walls and extending therefrom as a lumped inductance to form a gap therebetween as a lumped capacitance.