Abstract: A composition of Chinese medicines for externally treatment for hypertension includes following herbs: evodia rutaecarpa, chuanxiong, sunflower disc, rhizoma typhonii, angelica, prunella vulgaris, taxillus chinenesis, herba siegesbeckiae, chamomile, astragalus, uncaria rhynchophylla, asarum, and burdock, wherein a weight ratio of the composition is: evodia rutaecarpa 40-50, chuanxiong 30-40, sunflower disc 20-30, rhizoma typhonii 20-25, angelica 20-25, prunella vulgaris 20-30, herba siegesbeckiae 20-30, taxillus chinenesis 20-30, chamomile 20-25, astragalus 20-25, uncaria rhynchophylla 20-30, asarum 20-25, and burdock 20-25.

Abstract: A composition of Chinese medicines for externally treatment for hypertension includes following herbs: evodia rutaecarpa, chuanxiong, sunflower disc, rhizoma typhonii, angelica, prunella vulgaris, taxillus chinenesis, herba siegesbeckiae, chamomile, astragalus, uncaria rhynchophylla, asarum, and burdock, wherein a weight ratio of the composition is: evodia rutaecarpa 40-50, chuanxiong 30-40, sunflower disc 20-30, rhizoma typhonii 20-25, angelica 20-25, prunella vulgaris 20-30, herba siegesbeckiae 20-30, taxillus chinenesis 20-30, chamomile 20-25, astragalus 20-25, uncaria rhynchophylla 20-30, asarum 20-25, and burdock 20-25.

Abstract: MOS structures with remote contacts and methods for fabricating such MOS structures are provided. In one embodiment, a method for fabricating an MOS structure comprises providing a semiconductor layer that is at least partially surrounded by an isolation region and that has an impurity-doped first portion. First and second MOS transistors are formed on and within the first portion. The transistors are substantially parallel and define a space therebetween. An insulating material is deposited overlying the first portion of the semiconductor layer and at least a portion of the isolation region. A contact is formed through the insulating material outside the space such that the contact is in electrical communication with the transistors.

Abstract: MOS structures with remote contacts and methods for fabricating such MOS structures are provided. In one embodiment, a method for fabricating an MOS structure comprises providing a semiconductor layer that is at least partially surrounded by an isolation region and that has an impurity-doped first portion. First and second MOS transistors are formed on and within the first portion. The transistors are substantially parallel and define a space therebetween. An insulating material is deposited overlying the first portion of the semiconductor layer and at least a portion of the isolation region. A contact is formed through the insulating material outside the space such that the contact is in electrical communication with the transistors.