Abstract: An energy-assisted magnetic recording apparatus comprises a magnetic recording head having an end surface and an interface surface perpendicular to the end surface. The apparatus further comprises a vertical cavity surface emitting laser (VCSEL) bonded to the interface surface and configured to emit laser light through the interface surface and into the magnetic recording head. The magnetic recording head includes one or more light redirecting structures for redirecting the laser light towards the end surface. A method of making an energy-assisted magnetic recording apparatus comprises the steps of aligning a first wafer including a plurality of VCSELs with a second wafer including a plurality of magnetic recording heads, such that an emitting region of each of the plurality of VCSELs is disposed over a light redirecting structure of a corresponding one of the plurality of magnetic recording heads, and bonding the first wafer to the second wafer.

Abstract: An energy assisted magnetic recording (EAMR) transducer coupled with a laser is described. The EAMR transducer has an air-bearing surface (ABS) residing near a media during use. The laser provides energy. The transducer includes a waveguide, a near field transducer (NFT) proximate to the ABS, a write pole and at least one coil. The waveguide directs the energy from the laser toward the ABS. The NFT is optically coupled with the waveguide and focuses the energy onto a region of the media. The write pole writes to the region of the media. The write pole has a magnetic portion and a nonmagnetic liner. The magnetic portion has a plurality of sides and a pole thermal conductivity. The nonmagnetic liner is adjacent to at least the sides of the magnetic portion, and has a liner thermal conductivity greater than the pole thermal conductivity. The coil(s) are for energizing the write pole.

Abstract: A data storage medium comprises a plurality of data regions, and a plurality of servo regions configured to provide positioning information to a reading device. Each of the plurality of data regions corresponds to more than one of the plurality of servo regions. The more than one of the plurality of servo regions are configured to provide positioning information to the reading device at discrete times corresponding to a data operation of a corresponding data region.

Abstract: A method and system for providing an energy assisted magnetic recording (EAMR) disk drive are described. A media for storing data and a slider are provided. The slider has a back side, a trailing face, and an air-bearing surface (ABS) opposite to the back side. At least one laser is coupled with the trailing face of the slider, and has an optic axis substantially parallel to the trailing face. The laser(s) provide energy substantially along the optic axis. Optics are coupled with the trailing face of the slider and receive the energy from the laser(s) via free space. At least one EAMR transducer coupled with the slider. At least part of the EAMR transducer resides in proximity to the ABS. The optics direct the energy from the laser(s) to the EAMR transducer(s). The EAMR transducer(s) receive the energy from the optics and write to the media using the energy.

Abstract: A magnetic recording device comprises a multi-aperture vertical cavity surface emitting laser (VCSEL) operably coupled to a magnetic recording head and a plurality of waveguides disposed in the magnetic recording head. Each of the plurality of waveguides has a first end coupled to a different aperture of the multi-aperture VCSEL. The magnetic recording device further comprises a near field transducer disposed in the magnetic recording head. Each of the plurality of waveguides has a second end coupled to the near field transducer.

Abstract: A method and system for fabricating transducer having an air-bearing surface (ABS) is described. The method and system include providing at least one near-field transducer (NFT) film and providing an electronic lapping guide (ELG) film substantially coplanar with a portion of the at least one NFT film. The method and system also include defining a disk portion of an NFT from the portion of the at least one NFT film and at least one ELG from the ELG film. The disk portion corresponds to a critical dimension of the NFT from an ABS location. The method and system also include lapping the at least one transducer. The lapping is terminated based on a signal from the ELG.

Abstract: An anti-parallel pinned sensor is provided with a spacer that increases the anti-parallel coupling strength of the sensor. The anti-parallel pinned sensor is a GMR or TMR sensor having a pure ruthenium or ruthenium alloy spacer. The thickness of the spacer is less than 0.8 nm, preferably between 0.1 and 0.6 nm. The spacer is also annealed in a magnetic field that is 1.5 Tesla or higher, and preferably greater than 5 Tesla. This design yields unexpected results by more than tripling the pinning field over that of typical AP-pinned GMR and TMR sensors that utilize ruthenium spacers which are 0.8 nm thick and annealed in a relatively low magnetic field of approximately 1.3 Tesla.

Abstract: A data storage medium comprises a plurality of data regions, and a plurality of servo regions configured to provide positioning information to a reading device. Each of the plurality of data regions corresponds to more than one of the plurality of servo regions. The more than one of the plurality of servo regions are configured to provide positioning information to the reading device at discrete times corresponding to a data operation of a corresponding data region.

Abstract: A magnetic sensing device for use in a magnetic head includes a sensor stack structure having a sensing layer structure and an insulator structure formed adjacent the sensing layer structure. The insulator structure includes a plurality of oxidized metallic sublayers, a plurality of nitrided metallic sublayers, or a plurality of oxynitrided metallic sublayers. The insulator structure may be a capping layer structure of a giant magnetoresistance sensor or, alternatively, a tunnel barrier layer structure of a tunneling magnetoresistance sensor or a magnetic random access memory. Advantageously, each treated metallic sublayer is sufficiently uniformly treated so as to increase the magnetoresistive effect and improve soft magnetic properties of the magnetic sensing device.

Abstract: A magnetic head of either CIP or CPP configuration is disclosed, having a read sensor with a strongly pinned ferromagnetic layer due to increased electronic exchange with the AFM layer. The read sensor includes a lower seed layer whose material is chosen from a group consisting of Ta, NiFeCr, NiFeCoCr, NiFe, Cu, Ta/NiFeCr, Ta/NiFeCr/NiFe, Ta/Ru and Ta/NiFeCoCr, and an upper seed layer where the upper seed layer material is chosen from a group consisting of Ru, Cu, NiFe, Cu(x)Au(1?x)(x=0.22-0.5) alloys, Ru(x)Cr(1?x)(x=0.1-0.5) alloys, NiFeCr and NiFeCoCr. An AFM layer is formed on the upper seed layer and a ferromagnetic pinned layer is formed on the AFM layer. The exchange coupling energy Jk between the AFM layer and pinned layers exceeds 1.3 erg/cm2. Also disclosed is a method of fabrication of a magnetic head including a read head sensor with a strongly pinned ferromagnetic layer due to increased electronic exchange.

Abstract: A method for manufacturing a magnetic read sensor and a magnetic read sensor are provided. In one embodiment of the invention, the method includes providing a seed layer disposed over a substrate of the magnetic read sensor, providing a free layer disposed over a seed layer and providing a spacer layer disposed over the free layer. The method further includes providing a pinned layer disposed over the spacer layer. In one embodiment, the pinned layer includes cobalt and iron, wherein the concentration of iron in the pinned layer is between 33 and 37 atomic percent (at. %). The method further includes providing a pinning layer disposed over the pinned layer, wherein the pinning layer is in contact with the pinned layer.

Abstract: A giant magnetoresistance (GMR) sensor with strongly pinning and pinned layers is described for magnetic recording at ultrahigh densities. The pinning layer is an antiferromagnetic (AFM) iridium-manganese-chromium (Ir—Mn—Cr) film having a Mn content of approximately from 70 to 80 atomic percent and having a Cr content of approximately from 1 to 10 atomic percent. The first pinned layer is preferably a ferromagnetic Co—Fe having an Fe content of approximately from 20 to 80 at % and having high, positive saturation magnetostriction. The second pinned layer is preferably a ferromagnetic Co—Fe having an Fe content of approximately from 0 to 10 atomic percent. The net magnetic moment of the first and second pinned layers is designed to be nearly zero in order to achieve a pinning field of beyond 3,000 Oe.

Abstract: A method and apparatus for an improved magnetic read sensor having synthetic or AP pinned layers with high resistance and high magnetoelastic anisotropy is disclosed. A pinned layer includes a cobalt-iron ternary alloy, where a third constituent of the cobalt-iron ternary alloy layer is selected for increasing the resistance and magnetoelastic anisotropy of the cobalt-iron ternary alloy layer.

Abstract: An anti-parallel pinned sensor is provided with a spacer that increases the anti-parallel coupling strength of the sensor. The anti-parallel pinned sensor is a GMR or TMR sensor having a pure ruthenium or ruthenium alloy spacer. The thickness of the spacer is less than 0.8 nm, preferably between 0.1 and 0.6 nm. The spacer is also annealed in a magnetic field that is 1.5 Tesla or higher, and preferably greater than 5 Tesla. This design yields unexpected results by more than tripling the pinning field over that of typical AP-pinned GMR and TMR sensors that utilize ruthenium spacers which are 0.8 nm thick and annealed in a relatively low magnetic field of approximately 1.3 Tesla.

Abstract: A magnetic head and magnetic storage system containing such a head, the head including a free layer and a layer of metal oxide substantially epitaxially formed relative to the free layer. Preferably, the layer of metal oxide is a crystalline structure, and is of ZnO.

Abstract: An anti-parallel pinned sensor is provided with a spacer that increases the anti-parallel coupling strength of the sensor. The anti-parallel pinned sensor is a GMR or TMR sensor having a pure ruthenium or ruthenium alloy spacer. The thickness of the spacer is less than 0.8 nm, preferably between 0.1 and 0.6 nm. The spacer is also annealed in a magnetic field that is 1.5 Tesla or higher, and preferably greater than 5 Tesla. This design yields unexpected results by more than tripling the pinning field over that of typical AP-pinned GMR and TMR sensors that utilize ruthenium spacers which are 0.8 nm thick and annealed in a relatively low magnetic field of approximately 1.3 Tesla.

Abstract: A magnetic head of either CIP or CPP configuration is disclosed, having a read sensor with a strongly pinned ferromagnetic layer due to increased electronic exchange with the AFM layer. The read sensor includes a lower seed layer whose material is chosen from a group consisting of Ta, NiFeCr, NiFeCoCr, NiFe, Cu, Ta/NiFeCr, Ta/NiFeCr/NiFe, Ta/Ru and Ta/NiFeCoCr, and an upper seed layer where the upper seed layer material is chosen from a group consisting of Ru, Cu, NiFe, Cu(x)Au(1-x)(x=0.22-0.5) alloys, Ru(x)Cr(1-x)(x=0.1-0.5) alloys, NiFeCr and NiFeCoCr. An AFM layer is formed on the upper seed layer and a ferromagnetic pinned layer is formed on the AFM layer. The exchange coupling energy Jk between the AFM layer and pinned layers exceeds 1.3 erg/cm2. Also disclosed is a method of fabrication of a magnetic head including a read head sensor with a strongly pinned ferromagnetic layer due to increased electronic exchange.

Abstract: A magnetic head having a free layer and an antiparallel (AP) pinned layer structure spaced apart from the free layer. The AP pinned layer structure includes at least two pinned layers having magnetic moments that are self-pinned antiparallel to each other, the pinned layers being separated by an AP coupling layer constructed of a Ru alloy. The use of a Ru alloy coupling layer significantly increases the pinning field of the AP pinned layer structure over a pure Ru spacer.

Abstract: A spin valve sensor in a read head has a spacer layer which is located between a self-pinned AP pinned layer structure and a free layer structure. The free layer structure is longitudinally stabilized by first and second hard bias layers which abut first and second side surfaces of the spin valve sensor. The AP pinned layer structure has an antiparallel coupling layer (APC) which is located between first and second AP pinned layers (AP1) and (AP2). The invention employs a resetting process for setting of the magnetic moments of the AP pinned layers by applying a field at an acute angle to the head surface in a plane parallel to the major planes of the layers of the sensor. The resetting process sets a proper polarity of each AP pinned layer, which polarity conforms to processing circuitry employed with the spin valve sensor.

Abstract: A method for achieving a nearly zero net magnetic moment of pinned layers in GMR sensors, such as Co—Fe/Ru/Co—Fe, is described. The method determines a thickness of the first pinned layer which will yield the desired net magnetic moment for the pinned layers. A series of test structures are deposited on a substrate such as glass. The test structures include the seed layers, pinning layers and pinned layers and have varying thicknesses of the first pinned layer. The compositions of the materials and the thicknesses of all of the other films remain constant. The net areal magnetic moment of each test structure is measured and plotted versus the thickness of the first pinned layer. The thickness of the first pinned layer which corresponds most closely to zero net areal magnetic moment is chosen as the design point for the sensor.