Abstract: The present disclosure is directed to a composite film, comprising one or more layers, each layer comprising: i. a porous membrane comprising interconnected channels; and ii. a radiation sensitive material comprising a plurality of crystals, wherein the plurality of crystals are embedded in interconnected channels of said porous membrane. In certain embodiments, the radiation sensitive material is perovskite. Methods for producing the composite films and integrating the films onto read out circuitry for digital X-ray imaging are additionally described.

Abstract: Described herein is an ink solution, comprising: i. a composition having the formula ABX3; ii. a compound having the formula NH2—R1—NH2; and iii. a solvent. Methods for producing polycrystalline perovskite films using the ink solutions described herein in a fast blading process and the use of the films in photoactive and photovoltaic applications are additionally described.

Abstract: Electronic devices comprising a first layer, said first layer comprising a perovskite material; and a coating layer disposed on a surface of said first layer; wherein said coating layer comprises a coating oxysalt. Also provided herein are perovskite materials comprising: a coating layer on at least a portion of a surface of said perovskite material; wherein said coating layer comprises a coating oxysalt. Further provided herein are methods for forming a coating layer on a surface of a perovskite material comprising steps of: exposing said surface to a fluid having a precursor oxysalt dissolved therein such that said coating layer forms on said surface via a chemical reaction between said perovskite material and said precursor oxysalt; wherein said coating layer comprises a coating oxysalt.

Abstract: In an aspect, a method of forming a photoactive device comprises: providing a perovskite-surfactant solution, said perovskite-surfactant solution comprising a perovskite ink and a surfactant; and coating said perovskite-surfactant solution onto a receiving surface of a substrate thereby forming a layer of said photoactive device; wherein said layer comprises a perovskite material; and wherein an active area of said photoactive device is at least 1 cm2.

Abstract: Described herein are non-stoichiometric perovskite ink solutions, comprising: a first composition of formula FA1-xCsxBX3; a second composition of CsX, FAX, REX3, or REX2; and one or more solvents; wherein x, X, RE, and B are as defined herein. Methods for preparing polycrystalline perovskite films using the non-stoichiometric ink solutions and the use of the films in large-size solar modules are additionally described.

Abstract: Described herein are solar cells, comprising: an active layer comprising a perovskite composition, wherein the perovskite composition comprises lead; and, a lead-absorbing material. In certain embodiments, the lead-absorbing material is an ion exchange material. The lead absorbing material helps prevent lead leakage in damaged solar cells and solar modules under severe weather conditions.

Abstract: Perovskite single crystal X-ray radiation detector devices including an X-ray wavelength-responsive active layer including an organolead trihalide perovskite single crystal, a substrate layer comprising an oxide, and a binding layer disposed between the active layer and the substrate layer. The binding layer including a binding molecule having a first functional group that bonds to the organolead trihalide perovskite single crystal and a second functional group that bonds with the oxide. Inclusion of the binding layer advantageously reduces device noise while retaining signal intensity.

Abstract: A tandem photovoltaic device includes a silicon photovoltaic cell having a silicon layer, a perovskite photovoltaic cell having a perovskite layer, and an intermediate layer between a rear side of the perovskite photovoltaic cell and a front (sunward) side of the silicon photovoltaic cell. The front side of the silicon layer has a textured surface, with a peak-to-valley height of structures in the textured surface of less than 1 ?m or less than 2 ?m. The textured surface is planarized by the intermediate layer or a layer of the perovskite photovoltaic cell. Forming the tandem photovoltaic device includes texturing a silicon containing layer of a silicon photovoltaic cell and operatively coupling a perovskite photovoltaic cell comprising a perovskite layer to the silicon photovoltaic cell, thereby forming a tandem photovoltaic device and planarizing the textured surface of the silicon containing layer of the silicon photovoltaic cell.

Abstract: Perovskite single crystal X-ray radiation detector devices including an X-ray wavelength-responsive active layer including an organolead trihalide perovskite single crystal, a substrate layer comprising an oxide, and a binding layer disposed between the active layer and the substrate layer. The binding layer including a binding molecule having a first functional group that bonds to the organolead trihalide perovskite single crystal and a second functional group that bonds with the oxide. Inclusion of the binding layer advantageously reduces device noise while retaining signal intensity.

Abstract: The present disclosure is directed to perovskite-based solar cell device structures and compositions comprising one or more near infrared sensitive semiconducting materials. The near infrared sensitive semiconducting materials can extend the photoresponse spectra of the devices to the near infrared region, thereby improving the power conversion efficiency of the solar cell.

Abstract: Perovskite single crystal X-ray radiation detector devices including an X-ray wavelength-responsive active layer including an organolead trihalide perovskite single crystal, a substrate layer comprising an oxide, and a binding layer disposed between the active layer and the substrate layer. The binding layer including a binding molecule having a first functional group that bonds to the organolead trihalide perovskite single crystal and a second functional group that bonds with the oxide. Inclusion of the binding layer advantageously reduces device noise while retaining signal intensity.

Abstract: Semiconductor devices, and methods of forming the same, include a cathode layer, an anode layer, and an active layer disposed between the cathode layer and the anode layer, wherein the active layer includes a perovskite layer. A passivation layer is disposed directly on a surface of the active layer between the cathode layer and the active layer, the passivation layer including a layer of material that passivates both cationic and anionic defects in the surface of the active layer.

Abstract: Electronic devices comprising a first layer, said first layer comprising a perovskite material; and a coating layer disposed on a surface of said first layer; wherein said coating layer comprises a coating oxysalt. Also provided herein are perovskite materials comprising: a coating layer on at least a portion of a surface of said perovskite material; wherein said coating layer comprises a coating oxysalt. Further provided herein are methods for forming a coating layer on a surface of a perovskite material comprising steps of: exposing said surface to a fluid having a precursor oxysalt dissolved therein such that said coating layer forms on said surface via a chemical reaction between said perovskite material and said precursor oxysalt; wherein said coating layer comprises a coating oxysalt.

Abstract: Described herein is an ink solution, comprising: i. a composition having the formula ABX3; ii. a compound having the formula NH2—R1—NH2; and iii. a solvent. Methods for producing polycrystalline perovskite films using the ink solutions described herein in a fast blading process and the use of the films in photoactive and photovoltaic applications are additionally described.

Abstract: A method for preparing metal powder by water atomization is disclosed. The method includes the steps of smelting, atomization, separation and drying, and the metal powder is freeze-dried in the drying step. Experiments show that freeze-drying is an important factor affecting oxygen content indexes of copper and copper alloys, and can be applied to the preparation of copper and copper alloy powder and even metal powder with low oxygen content. The method further considers all the details that may cause oxidation during the atomization process, and takes comprehensive measures to greatly reduce the probability of oxidization of copper and copper alloy powder, so that the oxygen content and oxidation of the water atomized powder are effectively reduced, and the water atomized powder is not easy to be oxidized during long-term storage.

Abstract: Systems and methods for enhancing the stability and efficiency of perovskite materials, and devices incorporating such perovskite materials. A method of making a perovskite layer includes mixing a perovskite solution with a silica shell precursor solution to produce a perovskite-silica precursor solution, and spin casting or drop casting the perovskite-silica precursor solution on a substrate to form a perovskite material or material layer, wherein the perovskite material or material layer includes a plurality of groups of one or more perovskite grains, each of said plurality of groups wrapped in a silica shell. The silica shell precursor solution may have a chemical structure of Rn—Si—(OR)4-n, where “R” is an alkyl, aryl, or organofunctional group, and “OR” is a methoxy, ethoxy, or acetoxy group.

Abstract: Described herein is an ink solution, comprising a composition of formula (I): ABX3(I), wherein A comprises at least one cation selected from the group consisting of methylammonium, tetramethylammonium, formamidinium, cesium, rubidium, potassium, sodium, butylammonium, phenethylammonium, phenylammonium, and guanidinium; B comprises at least one divalent metal; and X is at least one halide; and a mixed solvent system comprising two or more solvents selected from the group consisting of dimethyl sulfoxide, dimethylformamide, ?-butyrolactone, 2-methoxyethanol, and acetonitrile. Methods for producing poly-crystalline perovskite films using the ink solutions described herein and the use of the films in photovoltaic and photoactive applications are additionally described.

Abstract: The present disclosure is directed to double junction tandem perovskite solar cells having a n+/n interconnection layer comprising an ion-doped fullerene layer and a metal oxide layer. In certain embodiments, the metal oxide is SnO2-x (0<x<1). The ion-doped fullerene and metal oxide layers form Ohmic contacts with the wide bandgap and narrow bandgap perovskite sub cells and demonstrate low resistivity and high power conversion efficiencies.

Abstract: Perovskite single crystal X-ray and gamma-ray radiation detector devices include an X-ray and gamma-ray wavelength responsive active layer including a perovskite single crystal. The perovskite single crystal is a perovskite single crystal having a structure of ABX3, wherein A is methylammonium (CH3NH3+), CS+, formamidinum (H2NCHNH2+), or Rb+ or a mixture thereof, B is Pb2+ which can be partially or completely replaced by other ions including Bi3+, Sb3+, Sn2+ or a mixture thereof, and X is a halide anion, thiocyanate (SCN?) or a mixture thereof.

Abstract: Oxide dispersion-strengthened alloy (ODS), lead-free and free-cutting brass and producing method thereof. The mass percent of components in the brass are: 52.0%-90.0% of copper, 0.001%-0.99% of phosphorus, 0.15%-0.70% of tin, 0.25%-3.0% of manganese, 0.15%-0.90% of aluminum, 0.10%-1.5% of nickel, 0.191%-0.90% of oxygen, and 0.06%-0.80% of carbon, the ratio of aluminum to oxygen not exceeding 27:24, with the balance being zinc and inevitable impurities, wherein lead is not more than 0.08%. The brass is produced by a powder metallurgy method: brass powder, copper oxide powder, and graphite micro powder are mixed evenly; 0.001%-1.5% of a forming agent is added and mixed evenly with the mixture; and then molded by compression, and sintering are performed before post-treatment.