Abstract: Provided are a random copolymer for forming a neutral layer promoting directed self-assembly pattern formation, a laminate for forming a pattern including the same, and a method for forming a high-quality pattern using the same.

Abstract: The present invention provides a random copolymer including structural units represented by the following Chemical Formulae 1 to 3 for forming a neutral layer for significantly reducing process time and process costs, and promoting directed self-assembly pattern formation of a block copolymer. The present invention further provides a laminate for forming a pattern including a neutral layer having a small thickness variation value due to washing, by including the random copolymer for forming a neutral layer. The present invention further provides a method for forming a pattern capable of stably vertically orienting a block copolymer on a laminate for forming a neutralized pattern.

Abstract: Provided are a random copolymer for forming a neutral layer promoting directed self-assembly pattern formation, a laminate for forming a pattern including the same, and a method for forming a high-quality pattern using the same.

Abstract: Provided are a random copolymer for forming a neutral layer promoting directed self-assembly pattern formation, a laminate for forming a pattern including the same, and a method for forming a high-quality pattern using the same.

Abstract: The present invention provides a random copolymer including structural units represented by the following Chemical Formulae 1 to 3 for forming a neutral layer for significantly reducing process time and process costs, and promoting directed self-assembly pattern formation of a block copolymer. The present invention further provides a laminate for forming a pattern including a neutral layer having a small thickness variation value due to washing, by including the random copolymer for forming a neutral layer. The present invention further provides a method for forming a pattern capable of stably vertically orienting a block copolymer on a laminate for forming a neutralized pattern.

Abstract: The present invention provides a random copolymer including structural units represented by the following Chemical Formulae 1 to 3 for forming a neutral layer for significantly reducing process time and process costs, and promoting directed self-assembly pattern formation of a block copolymer. The present invention further provides a laminate for forming a pattern including a neutral layer having a small thickness variation value due to washing, by including the random copolymer for forming a neutral layer. The present invention further provides a method for forming a pattern capable of stably vertically orienting a block copolymer on a laminate for forming a neutralized pattern.

Abstract: An etchant composition includes phosphoric acid and a silane compound represented by the following Chemical Formula 1: wherein A is an n-valent radical, L is C1-C5 hydrocarbylene, R1 to R3 are independently hydrogen, hydroxy, hydrocarbyl, or alkoxy, in which R1 to R3 exist respectively or are connected to each other by a heteroelement, and n is an integer of 2 to 5.

Abstract: Provided is a method of preparing poly(alkylene carbonate) using a molecular weight regulator in a process of preparing a copolymer of carbon dioxide/epoxide using a novel complex synthesized from salen-type ligand including a quaternary ammonium salt as a catalyst. According to the present invention, even though the molecular weight regulator is used, an activity of the catalyst may be stably maintained, whereby the low molecular weight of poly(alkylene carbonate) having a desirable level may be effectively provided. In addition, it is expected that since the novel complex as the catalyst of the present invention has a simple structure as compared to the existing copolymerization catalyst, due to the economical preparation cost thereof, the novel complex may be effectively applied to a large-scale commercial process.

Abstract: An etchant composition includes phosphoric acid and a silane compound represented by the following Chemical Formula 1: wherein A is an n-valent radical, L is C1-C5 hydrocarbylene, R1 to R3 are independently hydrogen, hydroxy, hydrocarbyl, or alkoxy, in which R1 to R3 exist respectively or are connected to each other by a heteroelement, and n is an integer of 2 to 5.

Abstract: Provided are a polymer used for a manufacturing process of a semiconductor and a display, a resist underlayer film composition containing the polymer for a manufacturing process of a semiconductor and a display, and a method for manufacturing semiconductor device using the composition, and more specifically, the polymer of the present disclosure simultaneously has optimized etching selectivity and planarization characteristics, such that the resist underlayer film composition containing the polymer is usable as a hard mask for a multilayer semiconductor lithography process.

Abstract: Provided are a random copolymer for forming a neutral layer promoting directed self-assembly pattern formation, a laminate for forming a pattern including the same, and a method for forming a high-quality pattern using the same.

Abstract: Provided are a random copolymer for forming a neutral layer promoting directed self-assembly pattern formation, a laminate for forming a pattern including the same, and a method for forming a high-quality pattern using the same.

Abstract: Provided are an electrolyte for a lithium secondary battery and a lithium secondary battery containing the same.

Abstract: Disclosed is a method of removing metals from hydrocarbon oil, comprising: supplying a feed including hydrocarbon oil; mixing the feed with an aqueous solution including a metal scavenger to prepare a first mixture; separating the first mixture into a first aqueous solution phase and a first hydrocarbon phase and discharging the separated first aqueous solution phase; mixing the separated first hydrocarbon phase with washing water to produce a second mixture; separating the second mixture into a second aqueous solution phase and a second hydrocarbon phase; and recovering the separated second hydrocarbon phase and recirculating the separated second aqueous solution phase.

Abstract: Provided is a diblock copolymer comprising a first block having a repeating unit represented by the following Chemical Formula 1, and a second block having a repeating unit represented by the following Chemical Formula 2:

Abstract: Provided is a method of forming fine patterns capable of minimizing LER and LWR to form high quality nanopatterns, by using a block copolymer having excellent etching selectivity.

Abstract: Provided is a method of preparing poly(alkylene carbonate) using a molecular weight regulator in a process of preparing a copolymer of carbon dioxide/epoxide using a novel complex synthesized from salen-type ligand including a quaternary ammonium salt as a catalyst. According to the present invention, even though the molecular weight regulator is used, an activity of the catalyst may be stably maintained, whereby the low molecular weight of poly(alkylene carbonate) having a desirable level may be effectively provided. In addition, it is expected that since the novel complex as the catalyst of the present invention has a simple structure as compared to the existing copolymerization catalyst, due to the economical preparation cost thereof, the novel complex may be effectively applied to a large-scale commercial process.

Abstract: Provided are a polymer used for a manufacturing process of a semiconductor and a display, a resist underlayer film composition containing the polymer for a manufacturing process of a semiconductor and a display, and a method for manufacturing semiconductor device using the composition, and more specifically, the polymer of the present disclosure simultaneously has optimized etching selectivity, planarization characteristic, and excellent thermal resistance, such that the resist underlayer film composition containing the polymer is usable as a hard mask for a multilayer semiconductor lithography process.

Abstract: Provided are an electrolyte for a high-voltage lithium secondary battery and a high-voltage lithium secondary battery containing the same, and more particularly, an electrolyte for a high-voltage lithium secondary battery which may not be oxidized and decomposed at the time of being kept at a high voltage and a high temperature to prevent swelling of a battery through suppression of gas generation, thereby having excellent high-temperature storage characteristics and excellent discharge characteristics at a low temperature while decreasing a thickness increase rate of the battery, and a high-voltage lithium secondary battery containing the same.

Abstract: Provided is a method of preparing poly(alkylene carbonate) using a molecular weight regulator in a process of preparing a copolymer of carbon dioxide/epoxide using a novel complex synthesized from salen-type ligand including a quaternary ammonium salt as a catalyst. According to the present invention, even though the molecular weight regulator is used, an activity of the catalyst may be stably maintained, whereby the low molecular weight of poly(alkylene carbonate) having a desirable level may be effectively provided. In addition, it is expected that since the novel complex as the catalyst of the present invention has a simple structure as compared to the existing copolymerization catalyst, due to the economical preparation cost thereof, the novel complex may be effectively applied to a large-scale commercial process.