Patents by Inventor Jinsui Liang

Jinsui Liang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Device and method for transient voltage suppressor
    Patent number: 8377757
    Abstract: A transient voltage suppressor (TVS) device includes a semiconductor substrate of a first conductivity type, and a first and a second semiconductor regions of a second conductivity type overlying the semiconductor substrate. A semiconductor layer of the second conductivity type overlies the first and the second semiconductor regions. The TVS device has a first trench extending through the semiconductor layer and the first semiconductor region and into the semiconductor substrate, and a fill material of the second conductivity type disposed in the first trench. A clamping diode in the TVS device has a junction between an out-diffused region from the fill material and a portion of the semiconductor substrate. The TVS device also includes a first P-N diode formed in a first portion of the semiconductor layer, and a second P-N diode having a junction between the second semiconductor region and the semiconductor substrate.
    Type: Grant
    Filed: April 30, 2010
    Date of Patent: February 19, 2013
    Assignee: Shanghai SIM-BCD Semiconductor Manufacturing Limited
    Inventors: Francis Edward Hawe, Jinsui Liang, Xiaoqiang Cheng, Xianfeng Liu
  • DEVICE AND METHOD FOR TRANSIENT VOLTAGE SUPPRESSOR
    Publication number: 20110266592
    Abstract: A transient voltage suppressor (TVS) device includes a semiconductor substrate of a first conductivity type, and a first and a second semiconductor regions of a second conductivity type overlying the semiconductor substrate. A semiconductor layer of the second conductivity type overlies the first and the second semiconductor regions. The TVS device has a first trench extending through the semiconductor layer and the first semiconductor region and into the semiconductor substrate, and a fill material of the second conductivity type disposed in the first trench. A clamping diode in the TVS device has a junction between an out-diffused region from the fill material and a portion of the semiconductor substrate. The TVS device also includes a first P-N diode formed in a first portion of the semiconductor layer, and a second P-N diode having a junction between the second semiconductor region and the semiconductor substrate.
    Type: Application
    Filed: April 30, 2010
    Publication date: November 3, 2011
    Inventors: Francis Edward Hawe, Jinsui Liang, Xiaoqiang Cheng, Xianfeng Liu