Abstract: An image sensor including a color pixel including a plurality of subpixels arranged in an m×n matrix, and each of m and n is a natural number of 2 to 10, on a substrate, and a pixel isolation structure configured to isolate each of the plurality of subpixels in the color pixel, wherein the pixel isolation structure includes, an outer isolation layer surrounding the color pixel, at least one isolation layer connection portion extending in a center direction of the color pixel from an inner wall of the outer isolation layer, at least one inner isolation layer limiting a size of a partial region of each of the plurality of subpixels in a region limited by the outer isolation layer, including a part between two subpixels adjacent to each other among the plurality of subpixels.