Abstract: A display device including: a substrate; a conductive layer on the substrate and including a first voltage line and a second voltage line extending in a first direction; a first electrode and a second electrode on the conductive layer, extending in the first direction, and spaced apart from each other; a plurality of light-emitting elements on the first electrode and the second electrode; and an electrode pattern on the conductive layer and separated from the first electrode. The electrode pattern overlaps the first voltage line in a thickness direction and directly contacts the first voltage line.

Abstract: An electroluminescent display device includes: a substrate, a first electrode on the substrate, a connection pattern on the substrate, the connection pattern including a same material as the first electrode, a bank covering edges of the first electrode and the connection pattern, a light-emitting layer on the first electrode, a second electrode on the light-emitting layer, the bank, and the connection pattern, and an auxiliary pattern between the connection pattern and the second electrode, the auxiliary pattern including one or more of: a metal oxide, conductive nanoparticles, and a work function-modifying polymer.

Abstract: A pixel includes a first insulating film disposed on a substrate, a light emitting element disposed on the first insulating film, a second insulating film disposed on the light emitting element to cover at least a portion of the light emitting element, a first contact electrode and a second contact electrode, each of the first and second contact electrodes including at least a portion disposed on the first insulating film and connected to the light emitting element, and an encapsulation layer including a photosensitive material.

Abstract: Provided is an X-ray tube including a cathode structure, an anode spaced apart from the cathode structure, a spacer structure disposed between the cathode structure and the anode, and an external power supply connected to each of the cathode structure, the anode, and the spacer structure. Here, the spacer structure includes a first spacer disposed adjacent to the cathode structure and a second spacer disposed on the first spacer and disposed adjacent to the anode. The first spacer includes a first portion adjacent to the cathode structure and a second portion adjacent to a contact point of the first spacer and the second spacer. The second spacer includes a third portion adjacent to the contact point and a fourth portion adjacent to the anode. Each of the first portion and the third portion has a volume resistivity less than that of the second portion.

Abstract: An example electronic device includes a housing; a touchscreen display; a microphone; at least one speaker; a button disposed on a portion of the housing or set to be displayed on the touchscreen display; a wireless communication circuit; a processor; and a memory. When a user interface is not displayed on the touchscreen display, the electronic device enables a user to receive a user input through the button, receives user speech through the microphone, and then provides data on the user speech to an external server. An instruction for performing a task is received from the server. When the user interface is displayed on the touchscreen display, the electronic device enables the user to receive the user input through the button, receives user speech through the microphone, and then provides data on the user speech to the external server.

Abstract: In one example, a semiconductor device can comprise a substrate, a device stack, first and second internal interconnects, and an encapsulant. The substrate can comprise a first and second substrate sides opposite each other, a substrate outer sidewall between the first substrate side and the second substrate side, and a substrate inner sidewall defining a cavity between the first substrate side and the second substrate side. The device stack can be in the cavity and can comprise a first electronic device, and a second electronic device stacked on the first electronic device. The first internal interconnect can be coupled to the substrate and the device stack. The encapsulant can cover the substrate inner sidewall and the device stack and can fill the cavity. Other examples and related methods are disclosed herein.

Abstract: A non-volatile memory device which can be highly-integrated without a decrease in reliability, and a method of fabricating the same, are provided. In the non-volatile memory device, a first doped layer of a first conductivity type is disposed on a substrate. A semiconductor pillar of a second conductivity type opposite to the first conductivity type extends upward from the first doped layer. A first control gate electrode substantially surrounds a first sidewall of the semiconductor pillar. A second control gate electrode substantially surrounds a second sidewall of the semiconductor pillar and is separated from the first control gate electrode. A second doped layer of the first conductivity type is disposed on the semiconductor pillar.

Abstract: Methods of forming integrated circuit devices include forming at least one non-volatile memory cell on a substrate. The memory cell includes a plurality of phase-changeable material regions therein that are electrically coupled in series. This plurality of phase-changeable material regions are collectively configured to support at least 2-bits of data when serially programmed using at least four serial program currents. Each of the plurality of phase-changeable material regions has different electrical resistance characteristics when programmed.

Abstract: A non-volatile memory device which can be highly-integrated without a decrease in reliability, and a method of fabricating the same, are provided. In the non-volatile memory device, a first doped layer of a first conductivity type is disposed on a substrate. A semiconductor pillar of a second conductivity type opposite to the first conductivity type extends upward from the first doped layer. A first control gate electrode substantially surrounds a first sidewall of the semiconductor pillar. A second control gate electrode substantially surrounds a second sidewall of the semiconductor pillar and is separated from the first control gate electrode. A second doped layer of the first conductivity type is disposed on the semiconductor pillar.

Abstract: Methods of forming integrated circuit devices include forming at least one non-volatile memory cell on a substrate. The memory cell includes a plurality of phase-changeable material regions therein that are electrically coupled in series. This plurality of phase-changeable material regions are collectively configured to support at least 2-bits of data when serially programmed using at least four serial program currents. Each of the plurality of phase-changeable material regions has different electrical resistance characteristics when programmed.