Abstract: A tandem photovoltaic (PV) may include III-V semiconductors, silicon, a cathode electrode, an anode electrode, and a gold-to-gold metal bridge electrode. The semiconductors include p-typed and n-typed regions. To form a tandem PV structure, bottom and top PV cells can be independently fabricated. The bottom and the top PV cells are electrically connected by the gold-to-gold metal bridge interconnection, which is positioned between the bottom and the top PV cells. The metal bridge may be formed by cold-welding compression technique. This structure is compatible to the development of tandem PVs as well as thermophotovoltaic (TPV) cells.