Patents by Inventor Jinwang Li
Jinwang Li has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11615957Abstract: A method of forming a boron-based film mainly containing boron on a substrate includes forming, on the substrate, an adhesion layer containing an element contained in a surface of the substrate and nitrogen, and subsequently, forming the boron-based film on the adhesion layer.Type: GrantFiled: February 26, 2019Date of Patent: March 28, 2023Assignee: TOKYO ELECTRON LIMITEDInventors: Hirokazu Ueda, Jinwang Li, Masahiro Oka, Yoshimasa Watanabe, Yuuki Yamamoto, Hiroyuki Ikuta
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Publication number: 20210090888Abstract: A method of forming a boron-based film mainly containing boron on a substrate includes forming, on the substrate, an adhesion layer containing an element contained in a surface of the substrate and nitrogen, and subsequently, forming the boron-based film on the adhesion layer.Type: ApplicationFiled: February 26, 2019Publication date: March 25, 2021Inventors: Hirokazu UEDA, Jinwang LI, Masahiro OKA, Yoshimasa WATANABE, Yuuki YAMAMOTO, Hiroyuki IKUTA
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Patent number: 10847657Abstract: A thin film transistor 100 according to the invention includes a gate electrode 20, a channel 44, and a gate insulating layer 34 provided between the gate electrode 20 and the channel 44 and made of oxide (possibly containing inevitable impurities; this applies to oxide hereinafter) containing lanthanum and zirconium. The channel 44 is made of channel oxide including first oxide containing indium, zinc, and zirconium (Zr) having an atomic ratio of 0.015 or more and 0.075 or less relative to indium assumed to be 1 in atomic ratio, second oxide containing indium and zirconium (Zr) having an atomic ratio of 0.055 or more and 0.16 or less relative to the indium (In) assumed to be 1 in atomic ratio, or third oxide containing indium and lanthanum having an atomic ratio of 0.055 or more and 0.16 or less relative to the indium (In) assumed to be 1 in atomic ratio.Type: GrantFiled: August 23, 2019Date of Patent: November 24, 2020Assignee: JAPAN SCIENCE AND TECHNOLOGY AGENCYInventors: Tatsuya Shimoda, Satoshi Inoue, Tue Trong Phan, Takaaki Miyasako, Jinwang Li
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Publication number: 20190386151Abstract: A thin film transistor 100 according to the invention includes a gate electrode 20, a channel 44, and a gate insulating layer 34 provided between the gate electrode 20 and the channel 44 and made of oxide (possibly containing inevitable impurities; this applies to oxide hereinafter) containing lanthanum and zirconium. The channel 44 is made of channel oxide including first oxide containing indium, zinc, and zirconium (Zr) having an atomic ratio of 0.015 or more and 0.075 or less relative to indium assumed to be 1 in atomic ratio, second oxide containing indium and zirconium (Zr) having an atomic ratio of 0.055 or more and 0.16 or less relative to the indium (In) assumed to be 1 in atomic ratio, or third oxide containing indium and lanthanum having an atomic ratio of 0.055 or more and 0.16 or less relative to the indium (In) assumed to be 1 in atomic ratio.Type: ApplicationFiled: August 23, 2019Publication date: December 19, 2019Inventors: Tatsuya SHIMODA, Satoshi INOUE, Tue Trong PHAN, Takaaki MIYASAKO, Jinwang Li
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Publication number: 20190301019Abstract: There is provided a boron-based film forming method for forming a boron-based film mainly containing boron on a substrate. The method includes steps of loading a substrate into a chamber of a film forming apparatus for forming the boron-based film by plasma CVD using capacitively-coupled plasma, supplying a processing gas containing a boron-containing gas into the chamber, applying a high frequency power for generating the capacitively-coupled plasma and forming the boron-based film on the substrate by generating a plasma of the processing gas by the high frequency power. A film stress of the boron-based film is adjusted by the high frequency power in the applying step.Type: ApplicationFiled: March 25, 2019Publication date: October 3, 2019Inventors: Yoshimasa WATANABE, Masahiro OKA, Jinwang LI, Yuuki YAMAMOTO, Hirokazu UEDA
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Patent number: 10431731Abstract: The present invention comprises: a step of applying a liquid composition for forming a PZT ferroelectric film; a step of drying the film applied with the liquid composition; a step of irradiating UV rays onto the dried film at a temperature of 150 to 200° C. in an oxygen-containing atmosphere; and after the application step, the drying step, and the UV irradiation step once, or more times, a step of firing for crystallizing a precursor film of the UV-irradiated ferroelectric film by raising a temperature with a rate of 0.5° C./second or higher in an oxygen-containing atmosphere or by raising a temperature with a rate of 0.2° C./second or higher in a non-oxygen containing atmosphere, followed by keeping the temperature at 400 to 500° C. An amount of liquid composition is set such that thickness of the ferroelectric film be 150 nm or more for each application and ozone is supplied during UV irradiation.Type: GrantFiled: August 26, 2016Date of Patent: October 1, 2019Assignees: JAPAN ADVANCED INSTITUTE OF SCIENCE AND TECHNOLOGY, MITSUBISHI MATERIALS CORPORATIONInventors: Yuki Tagashira, Reijiro Shimura, Yuzuru Takamura, Jinwang Li, Tatsuya Shimoda, Toshiaki Watanabe, Nobuyuki Soyama
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Publication number: 20180248109Abstract: The present invention comprises: a step of applying a liquid composition for forming a PZT ferroelectric film; a step of drying the film applied with the liquid composition; a step of irradiating UV rays onto the dried film at a temperature of 150 to 200° C. in an oxygen-containing atmosphere; and after the application step, the drying step, and the UV irradiation step once, or more times, a step of firing for crystallizing a precursor film of the UV-irradiated ferroelectric film by raising a temperature with a rate of 0.5° C./second or higher in an oxygen-containing atmosphere or by raising a temperature with a rate of 0.2° C./second or higher in a non-oxygen containing atmosphere, followed by keeping the temperature at 400 to 500° C. An amount of liquid composition is set such that thickness of the ferroelectric film be 150 nm or more for each application and ozone is supplied during UV irradiation.Type: ApplicationFiled: August 26, 2016Publication date: August 30, 2018Inventors: Yuki Tagashira, Reijiro Shimura, Yuzuru Takamura, Jinwang Li, Tatsuya Shimoda, Toshiaki Watanabe, Nobuyuki Soyama
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Publication number: 20170133517Abstract: A thin film transistor 100 according to the invention includes a gate electrode 20, a channel 44, and a gate insulating layer 34 provided between the gate electrode 20 and the channel 44 and made of oxide (possibly containing inevitable impurities, this applies to oxide hereinafter) containing lanthanum and zirconium. The channel 44 is made of channel oxide including first oxide containing indium, zinc, and zirconium (Zr) having an atomic ratio of 0.015 or more and 0.075 or less relative to indium assumed to be 1 in atomic ratio, second oxide containing indium and zirconium (Zr) having an atomic ratio of 0.055 or more and 0.16 or less relative to the indium (In) assumed to be 1 in atomic ratio, or third oxide containing indium and lanthanum having an atomic ratio of 0.055 or more and 0.16 or less relative to the indium (In) assumed to be 1 in atomic ratio.Type: ApplicationFiled: November 15, 2016Publication date: May 11, 2017Inventors: Tatsuya SHIMODA, Satoshi INOUE, Tue Trong PHAN, Takaaki MIYASAKO, Jinwang Li
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Patent number: 9536993Abstract: A thin film transistor 100 according to the invention includes a gate electrode 20, a channel 44, and a gate insulating layer 34 provided between the gate electrode 20 and the channel 44 and made of oxide (possibly containing inevitable impurities; this applies to oxide hereinafter) containing lanthanum and zirconium. The channel 44 is made of channel oxide including first oxide containing indium, zinc, and zirconium (Zr) having an atomic ratio of 0.015 or more and 0.075 or less relative to indium assumed to be 1 in atomic ratio, second oxide containing indium and zirconium (Zr) having an atomic ratio of 0.055 or more and 0.16 or less relative to the indium (In) assumed to be 1 in atomic ratio, or third oxide containing indium and lanthanum having an atomic ratio of 0.055 or more and 0.16 or less relative to the indium (In) assumed to be 1 in atomic ratio.Type: GrantFiled: March 18, 2013Date of Patent: January 3, 2017Assignee: JAPAN SCIENCE AND TECHNOLOGY AGENCYInventors: Tatsuya Shimoda, Satoshi Inoue, Tue Trong Phan, Takaaki Miyasako, Jinwang Li
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Patent number: 9178022Abstract: The present invention provides a precursor composition for forming a conductive oxide film having high conductivity and a stable amorphous structure maintained even after heated at high temperature by a simple liquid phase process. The precursor composition of the present invention contains at least one selected from the group consisting of carboxylates, nitrates and sulfates of lanthanoids (but, except for cerium); at least one selected from the group consisting of carboxylates, nitrosyl carboxylates, nitrosyl nitrates and nitrosyl sulfates of ruthenium, iridium or rhodium; and a solvent containing at least one selected from the group consisting of carboxylic acids, alcohols and ketones.Type: GrantFiled: July 8, 2011Date of Patent: November 3, 2015Assignee: JAPAN SCIENCE AND TECHNOLOGY AGENCYInventors: Tatsuya Shimoda, Jinwang Li
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Patent number: 9082618Abstract: A method of forming a conductive film, comprising the steps of: applying a composition comprising at least one metal compound selected from the group consisting of carboxylate salt, alkoxide, diketonato and nitrosylcarboxylate salt of a metal selected from among copper, palladium, rhodium, ruthenium, iridium, nickel and bismuth and a solvent to a substrate to form a coating film; and supplying a hydrogen radical to the coating film to carry out a hydrogen radical treatment.Type: GrantFiled: February 28, 2013Date of Patent: July 14, 2015Assignee: JAPAN SCIENCE AND TECHNOLOGY AGENCYInventors: Tatsuya Shimoda, Jinwang Li
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Publication number: 20150102340Abstract: A method of forming a conductive film, comprising the steps of: applying a composition comprising at least one metal compound selected from the group consisting of carboxylate salt, alkoxide, diketonato and nitrosylcarboxylate salt of a metal selected from among copper, palladium, rhodium, ruthenium, iridium, nickel and bismuth and a solvent to a substrate to form a coating film; and supplying a hydrogen radical to the coating film to carry out a hydrogen radical treatment.Type: ApplicationFiled: February 28, 2013Publication date: April 16, 2015Applicant: JAPAN SCIENCE AND TECHNOLOGY AGENCYInventors: Tatsuya Shimoda, Jinwang Li
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Publication number: 20150076487Abstract: A thin film transistor 100 according to the invention includes a gate electrode 20, a channel 44, and a gate insulating layer 34 provided between the gate electrode 20 and the channel 44 and made of oxide (possibly containing inevitable impurities; this applies to oxide hereinafter) containing lanthanum and zirconium. The channel 44 is made of channel oxide including first oxide containing indium, zinc, and zirconium (Zr) having an atomic ratio of 0.015 or more and 0.075 or less relative to indium assumed to be 1 in atomic ratio, second oxide containing indium and zirconium (Zr) having an atomic ratio of 0.055 or more and 0.16 or less relative to the indium (In) assumed to be 1 in atomic ratio, or third oxide containing indium and lanthanum having an atomic ratio of 0.055 or more and 0.16 or less relative to the indium (In) assumed to be 1 in atomic ratio.Type: ApplicationFiled: March 18, 2013Publication date: March 19, 2015Inventors: Tatsuya Shimoda, Satoshi Inoue, Tue Trong Phan, Takaaki Miyasako, Jinwang Li
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Publication number: 20140367674Abstract: A process for forming an amorphous conductive oxide film, comprising the steps of: applying a composition which comprises (A1) a×y parts by mole of at least one metal compound selected from the group consisting of carboxylate salts, alkoxides, diketonates, nitrate salts and halides of a metal selected from among lanthanoids (excluding cerium), (A2) a×(1?y) parts by mole of at least one metal compound selected from the group consisting of carboxylate salts, alkoxides, diketonates, nitrate salts and halides of a metal selected from among lead, bismuth, nickel, palladium, copper and silver, (B) 1 part by mole of at least one metal compound selected from the group consisting of carboxylate salts, alkoxides, diketonates, nitrate salts, halides, nitrosylcarboxylate salts, nitrosylnitrate salts, nitrosylsulfate salts and nitrosylhalides of a metal selected from among ruthenium, iridium, rhodium and cobalt, and (C) a solvent containing at least one selected from the group consisting of carboxylic acids, alcohols, ketType: ApplicationFiled: November 15, 2012Publication date: December 18, 2014Applicant: JAPAN SCIENCE AND TECHNOLOGY AGENCYInventors: Tatsuya Shimoda, Jinwang Li
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Publication number: 20130112973Abstract: The present invention provides a precursor composition for forming a conductive oxide film having high conductivity and a stable amorphous structure maintained even after heated at high temperature by a simple liquid phase process. The precursor composition of the present invention contains at least one selected from the group consisting of carboxylates, nitrates and sulfates of lanthanoids (but, except for cerium); at least one selected from the group consisting of carboxylates, nitrosyl carboxylates, nitrosyl nitrates and nitrosyl sulfates of ruthenium, iridium or rhodium; and a solvent containing at least one selected from the group consisting of carboxylic acids, alcohols and ketones.Type: ApplicationFiled: July 8, 2011Publication date: May 9, 2013Applicant: JAPAN SCIENCE AND TECHNOLOGY AGENCYInventors: Tatsuya Shimoda, Jinwang Li