Abstract: A composition having antibacterial effects against Tannerella forsythensis and Streptococcus mutans, inhibiting effects on gum inflammation, spontaneous bleeding of gums and plaque accumulation, improving effects on xerostomia and salivary pH, inhibiting effects on bad breath, and improving effects on constipation. The composition contains bay tree (Laurus nobilis L.) extract.

Abstract: Pharmaceutical preparations, Chinese herbal preparations, foods, and other compositions may contain, as an active ingredient, an ephedra extract, an ephedrine-alkaloid-free ephedra extract, or a polymercondensed tannin derived from an ephedra extract. Such compositions may be useful for preventing or treating COVID-19 infection (COVID-19). Such compositions are preferably provided in an orally ingestible form.

Abstract: A method that promotes sleep onset and sleep maintenance, reduces stress, and improves a relaxation effect, performance, concentration, a resting effect and an effect of recovery from fatigue. The method includes administering to a subject Apocynum venetum leaf extract.

Abstract: The present invention relates to a composition and method for improving the quantity of tear fluid, a composition and method for treating constipation, and a composition and method for improving skin quality. By utilizing an extract of Black ginger (Kaempferia parviflora)), the quantity of tear fluid, constipation, and skin quality are improved.

Abstract: A composition and method for the prevention and/or improvement of dry eye syndrome, dryness of eye and/or stiff neck and shoulder, which contains bilberry fruit extract and is effective with less intake are provided. As one aspect of the present invention, the composition for the prevention or improvement of dry eye syndrome or dryness of eye contains a freeze-dried bilberry fruit extract. As another aspect of the present invention, the composition for the prevention or improvement of stiff neck and shoulder contains a freeze-dried bilberry fruit extract. As another aspect of the present invention, a composition for the prevention or improvement of dry eye syndrome, dryness of eye, and stiff neck and shoulder, contains a freeze-dried bilberry fruit extract. As another aspect of the present invention, a method using a bilberry fruit extract for the improvement of stiff neck and shoulder is provided.

Abstract: A method that promotes sleep onset and sleep maintenance, reduces stress, and improves a relaxation effect, performance, concentration, a resting effect and an effect of recovery from fatigue. The method includes administering to a subject Apocynum venetum leaf extract.

Abstract: A device comprising a semiconductor layer including a plurality of compositional inhomogeneous regions is provided. The difference between an average band gap for the plurality of compositional inhomogeneous regions and an average band gap for a remaining portion of the semiconductor layer can be at least thermal energy. Additionally, a characteristic size of the plurality of compositional inhomogeneous regions can be smaller than an inverse of a dislocation density for the semiconductor layer.

Abstract: The present invention relates to a composition for improving the quantity of tear fluid, a composition for improving constipation, and a composition for improving skin quality. By containing the extract of Black ginger (Kaempferia parviflora)), it is possible that the quantity of tear fluid, constipation, and skin quality are improved.

Abstract: The present invention relates to a composition and method for improving the quantity of tear fluid, a composition and method for treating constipation, and a composition and method for improving skin quality.

Abstract: A composition for the prevention and/or improvement of dry eye syndrome, dryness of eye and/or stiff neck and shoulder, which contains bilberry fruit extract and is effective with less intake. As one aspect of the present invention, the composition for the prevention or improvement of dry eye syndrome or dryness of eye contains a freeze-dried bilberry fruit extract. As another aspect of the present invention, the composition for the prevention or improvement of stiff neck and shoulder contains a freeze-dried bilberry fruit extract. As another aspect of the present invention, a composition for the prevention or improvement of dry eye syndrome, dryness of eye, and stiff neck and shoulder, contains a freeze-dried bilberry fruit extract.

Abstract: A method of fabricating a device using a layer with a patterned surface for improving the growth of semiconductor layers, such as group III nitride-based semiconductor layers with a high concentration of aluminum, is provided. The patterned surface can include a substantially flat top surface and a plurality of stress reducing regions, such as openings. The substantially flat top surface can have a root mean square roughness less than approximately 0.5 nanometers, and the stress reducing regions can have a characteristic size between approximately 0.1 microns and approximately five microns and a depth of at least 0.2 microns. A layer of group-III nitride material can be grown on the first layer and have a thickness at least twice the characteristic size of the stress reducing regions. A device including one or more of these features also is provided.

Abstract: Heterostructures for use in optoelectronic devices are described. One or more parameters of the heterostructure can be configured to improve the reliability of the corresponding optoelectronic device. The materials used to create the active structure of the device can be considered in configuring various parameters the n-type and/or p-type sides of the heterostructure.

Abstract: A solution for designing and/or fabricating a structure including a quantum well and an adjacent barrier is provided. A target band discontinuity between the quantum well and the adjacent barrier is selected to coincide with an activation energy of a dopant for the quantum well and/or barrier. For example, a target valence band discontinuity can be selected such that a dopant energy level of a dopant in the adjacent barrier coincides with a valence energy band edge for the quantum well and/or a ground state energy for free carriers in a valence energy band for the quantum well. Additionally, a target doping level for the quantum well and/or adjacent barrier can be selected to facilitate a real space transfer of holes across the barrier. The quantum well and the adjacent barrier can be formed such that the actual band discontinuity and/or actual doping level(s) correspond to the relevant target(s).

Abstract: A solution for fabricating a semiconductor structure is provided. The semiconductor structure includes a plurality of semiconductor layers grown over a substrate using a set of epitaxial growth periods. During each epitaxial growth period, a first semiconductor layer having one of: a tensile stress or a compressive stress is grown followed by growth of a second semiconductor layer having the other of: the tensile stress or the compressive stress directly on the first semiconductor layer.

Abstract: A composite material, which can be used as an encapsulant for an ultraviolet device, is provided. The composite material includes a matrix material and at least one filler material incorporated in the matrix material that are both at least partially transparent to ultraviolet radiation of a target wavelength. The filler material includes microparticles and/or nanoparticles and can have a thermal coefficient of expansion significantly smaller than a thermal coefficient of expansion of the matrix material for relevant atmospheric conditions. The relevant atmospheric conditions can include a temperature and a pressure present during each of: a curing and a cool down process for fabrication of a device package including the composite material and normal operation of the ultraviolet device within the device package.

Abstract: A semiconductor structure, such as a group III nitride-based semiconductor structure is provided. The semiconductor structure includes a cavity containing semiconductor layer. The cavity containing semiconductor layer can have a thickness greater than two monolayers and a multiple cavities. The cavities can have a characteristic size of at least one nanometer and a characteristic separation of at least five nanometers.

Abstract: A device comprising a semiconductor layer including a plurality of compositional inhomogeneous regions is provided. The difference between an average band gap for the plurality of compositional inhomogeneous regions and an average band gap for a remaining portion of the semiconductor layer can be at least thermal energy. Additionally, a characteristic size of the plurality of compositional inhomogeneous regions can be smaller than an inverse of a dislocation density for the semiconductor layer.

Abstract: A semiconductor structure, such as a group III nitride-based semiconductor structure is provided. The semiconductor structure includes a cavity containing semiconductor layer. The cavity containing semiconductor layer can have a thickness greater than two monolayers and a multiple cavities. The cavities can have a characteristic size of at least one nanometer and a characteristic separation of at least five nanometers.

Abstract: A device including a first semiconductor layer and a contact to the first semiconductor layer is disclosed. An interface between the first semiconductor layer and the contact includes a first roughness profile having a characteristic height and a characteristic width. The characteristic height can correspond to an average vertical distance between crests and adjacent valleys in the first roughness profile. The characteristic width can correspond to an average lateral distance between the crests and adjacent valleys in the first roughness profile.

Abstract: Heterostructures for use in optoelectronic devices are described. One or more parameters of the heterostructure can be configured to improve the reliability of the corresponding optoelectronic device. The materials used to create the active structure of the device can be considered in configuring various parameters the n-type and/or p-type sides of the heterostructure.